IS61VPS102418A - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61VPS12836A - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS25618A - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61VPS25636A - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS25636A-200TQ - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS25636A-250B2 - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS25636A-250B3 - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS25636A-250TQ - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS25672A - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS51218A - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS51218A-200TQ - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS51218A-250B2 - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS51218A-250B3 - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS51218A-250TQ - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61WV12816BLL-12TI - 128K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV12816BLL and IS64WV12816BLL arehigh-speed, 2,097,152-bit static RAM organized as 131,072words by 16 bits. They are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldsaccess times as fast as 12 ns with low power consumption.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.
IS61WV12816BLL-12TLI - 128K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV12816BLL and IS64WV12816BLL arehigh-speed, 2,097,152-bit static RAM organized as 131,072words by 16 bits. They are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldsaccess times as fast as 12 ns with low power consumption.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.
IS61WV20488 - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488ALL-20MI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488ALL-20TI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488BLL-10MLI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488BLL-10TI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488BLL-10TLI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV3216BLL-12BI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV3216BLL isA high-speed, 524,288-bitstatic RAM organized as 32,768 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS61WV3216BLL-12BLI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV3216BLL isA high-speed, 524,288-bitstatic RAM organized as 32,768 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS61WV6416BLL-12BI - 64K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV6416BLL isA high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS61WV6416BLL-12BLI - 64K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV6416BLL isA high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS62C256AL-25TI - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS62C256AL-25UI - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS62C256AL-45TI - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS62C256AL-45TLI - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS62C256AL-45U - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS62C256AL-45UI - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS62C256AL-45UL - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS62C256AL-45ULI - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS62LV256AL-20J - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-20JL - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-20JLI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-20TI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-20TLI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-45J - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-45JI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-45T - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-45TI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-45TL - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-45TLI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-45U - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62LV256AL-45ULI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS62WV1288ALL - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288ALL-70BI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288ALL-70HI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288ALL/BLL - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288BLL-45BI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-45HI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-45QI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-45TI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-55BI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-55HI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-55HLI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-55QI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-55QLI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-55TI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV1288BLL-55TLI - 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed,1M bit static RAMs organized as 128K words by 8bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV20488ALL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
IS62WV20488BLL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
IS62WV25616ALL - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616ALL-70BI - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAMThe ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed,low power, 4M bit SRAMs organized as 256K wordsby 16 bits. It is fabricated using ISSI\'s high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV25616ALL-70T - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616ALL-70TI - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-55BI - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAMThe ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed,low power, 4M bit SRAMs organized as 256K wordsby 16 bits. It is fabricated using ISSI\'s high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV25616BLL-55T - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAMThe ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed,low power, 4M bit SRAMs organized as 256K wordsby 16 bits. It is fabricated using ISSI\'s high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV25616BLL-55TI - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAMThe ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed,low power, 4M bit SRAMs organized as 256K wordsby 16 bits. It is fabricated using ISSI\'s high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV25616BLL-55TLI - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAMThe ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed,low power, 4M bit SRAMs organized as 256K wordsby 16 bits. It is fabricated using ISSI\'s high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV25616BLL-70T - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAMThe ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed,low power, 4M bit SRAMs organized as 256K wordsby 16 bits. It is fabricated using ISSI\'s high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416ALL - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55B - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55B2I - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416ALL-55BI - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416ALL-55BLI - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416ALL-55T - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55TI - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416ALL-55TLI - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416ALL/BLL - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416BLL - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-45B - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416BLL-45T - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416BLL-55B2I - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416BLL-55BI - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416BLL-55BLI - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416BLL-55TI - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
IS62WV6416BLL-55TLI - 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAMThe ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed,1M bit static RAMs organized as 64K words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices.
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