IS41LV85120A-60KL (ISSI) - 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41C85120A and IS41LV85120A are 524,288 x 8-bit high-performance CMOS Dynamic Random AccessMemory. Both products offer accelerated cycle access EDOPage Mode. EDO Page Mode allows 512 random accesseswithinA single row with access cycle time as short as 10ns per8-bit word. The Byte Write control, of upper and lower byte,makes the IS41C85120A and IS41LV85120A ideal for use in16 and 32-bit wide data bus systems., DRAM

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IS41LV85120A-60KL (ISSI)

Electronic component documentation (datasheet) «IS41LV85120A-60KL» (DRAM), manufacturer ISSI. Download datasheet file:

Datasheet IS41LV85120A-60KL manufacturer ISSI

Partname	IS41LV85120A-60KL
Description	512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41C85120A and IS41LV85120A are 524,288 x 8-bit high-performance CMOS Dynamic Random AccessMemory. Both products offer accelerated cycle access EDOPage Mode. EDO Page Mode allows 512 random accesseswithinA single row with access cycle time as short as 10ns per8-bit word. The Byte Write control, of upper and lower byte,makes the IS41C85120A and IS41LV85120A ideal for use in16 and 32-bit wide data bus systems.
Functional	DRAM
Manufacturer	Integrated Silicon Solution
Site	www.issi.com

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IS41C85120A, IS41C85120A-60K, IS41LV85120A-60K, IS41LV85120A-60KL

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