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Components list, symbol «K», page 1

  1. K-02803G-P Неопределенные - Lcd Back Light, Cob Type, Lcd Character 240 X 128
  2. K-03203GX Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 16��1(L)
  3. K-04204GX Неопределенные - Lcd Back Light, Cob Type, Lcd Character 16��1(l)
  4. K-04211GX-P Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 20 X 2, 16 X 4
  5. K-05205GX Неопределенные - Lcd Back Light, Cob Type, Lcd Character 20 X 2, 16 X 4
  6. K1 Неопределенные - KS Series KEY SWITCHES
  7. K102P Неопределенные - Optically Coupled Isolator
  8. K102P1 Неопределенные - Optically Coupled Isolator
  9. K102P2 Неопределенные - Optically Coupled Isolator
  10. K102P3 Неопределенные - Optically Coupled Isolator
  11. K105 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  12. K100S Неопределенные - 2,500V - 10,000V Rectifiers
  13. K110 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  14. K120 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  15. K130 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  16. K150 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  17. K139 Неопределенные - Diy Kit 139. Stereo 1w Audio Amplifier With Dc Volume Control
  18. K140 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  19. K1536BLC Неопределенные - Low Cost Surface Mount Vcxos
  20. K1536BLCM Неопределенные - LOW COST SURFACE MOUNT VCXOS
  21. K155 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  22. K155NA1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  23. K155NA2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  24. K155NA3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  25. K155NA4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  26. K155NA6 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  27. K155NA7 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  28. K155NA8 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  29. K155NE1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  30. K155NE2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  31. K155NE4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  32. K155NE5 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  33. K155NH1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  34. K155NM1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  35. K155NM2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  36. K155NM3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  37. K155NP1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  38. K155NP3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  39. K155NP4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  40. K155TB1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  41. K155TM2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  42. K155TM5 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  43. K155TM7 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  44. K1603TE Неопределенные - 14 DIP, 5.0 Volt, CMOS/TTL, TCXO
  45. K1745 Неопределенные - 2SK1745
  46. K176 Неопределенные - MOS-Intergrated Microcircuits
  47. K176TM1 Неопределенные - Mos-intergrated Microcircuits
  48. K176TM2 Неопределенные - MOS-Intergrated Microcircuits
  49. K1603T Неопределенные - 14 DIP, 5.0 Volt, CMOS/TTL, TCXO
  50. K2 Неопределенные - KS Series KEY SWITCHES
  51. K200 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  52. K-18001GX-P Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 240 X 128
  53. K220 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  54. K220 Неопределенные - Contractor Flashlight
  55. K240 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  56. K250 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  57. K2011 Неопределенные - If Filter For Intercarrier Application (if= 38.0 Mhz. Standard B/g-ccir, D/k-oirt)
  58. K25S Неопределенные - 2,500V - 10,000V Rectifiers
  59. K2971M Неопределенные - If Filter For Intercarrier Applications
  60. K3NR Неопределенные - High-speed, Intelligent Interface Modules
  61. K3NR-NB1A Неопределенные - High-speed, Intelligent Interface Modules
  62. K3NR-NB1C Неопределенные - High-speed, Intelligent Interface Modules
  63. K3NR-NB2A Неопределенные - High-speed, Intelligent Interface Modules
  64. K3NR-NB2C Неопределенные - High-speed, Intelligent Interface Modules
  65. K3NR-PB1A Неопределенные - High-speed, Intelligent Interface Modules
  66. K3NR-PB1C Неопределенные - High-speed, Intelligent Interface Modules
  67. K3NR-PB2A Неопределенные - High-speed, Intelligent Interface Modules
  68. K3NR-PB2C Неопределенные - High-speed, Intelligent Interface Modules
  69. K3 Неопределенные - KS Series KEY SWITCHES
  70. K300 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  71. K3X13AA Неопределенные - Sensor to Computer Interface Modules
  72. K3X13AX Неопределенные - Sensor to Computer Interface Modules
  73. K3X13HQ Неопределенные - Sensor to Computer Interface Modules
  74. K3X13LT Неопределенные - Sensor to Computer Interface Modules
  75. K4 Неопределенные - KS Series KEY SWITCHES
  76. K4032 Неопределенные - Vestigial Sideband Filter (if= 38,0 Mhz, Standard D, Full Transmission)
  77. K3010 COSMO - High Reliability Photo Coupler
  78. K2010 COSMO - High Reliability Photo Coupler
  79. K1010 COSMO - High Reliability Photo Coupler
  80. K1010A COSMO - Photocoupler, CTR 80 to 160%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  81. K1010B COSMO - Photocoupler, CTR 130 to 260%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  82. K1010C COSMO - Photocoupler, CTR 200 to 400%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  83. K1010D COSMO - Photocoupler, CTR 300 to 600%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  84. K1010E COSMO - Photocoupler, CTR 50 to 600%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  85. K015-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  86. K016-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  87. K017-000 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  88. K017-250 Eichhoff - Radio-interference Suppression Capacitors
  89. K018-000 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  90. K002-798 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  91. K005-600 Eichhoff - Spark Quenching Capacitors
  92. K005-601 Eichhoff - Spark Quenching Capacitors
  93. K005-650 Eichhoff - Spark Quenching Capacitors
  94. K006-006-500 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  95. K006-200 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  96. K006-600-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  97. K006-700 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  98. K006-700-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  99. K006-700-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  100. K006-700-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  101. K006-750-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  102. K006-750-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  103. K006-750-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  104. K006-800-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  105. K006-800-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  106. K006-800-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  107. K006-875-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  108. K006-875-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  109. K006-875-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  110. K006-900-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  111. K006-900-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  112. K006-900-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  113. K007-200 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  114. K008-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  115. K009-200 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  116. K009-550 Eichhoff - Foru-pole Radio Interference Suppression Capacitors
  117. K2955M EPCOS - IF Filter for Intercarrier Applications
  118. K08PN40 Fairchild - TRIAC (Silicon Bidirectional Thyristor)
  119. K08PN60 Fairchild - TRIAC (Silicon Bidirectional Thyristor)
  120. k246 Fuji - N-channel MOS-FET
  121. K1713 Hamamatsu - Two-color detector
  122. K1713-01 Hamamatsu - Two-color Detector
  123. K1713-02 Hamamatsu - Two-color detector
  124. K1713-05 Hamamatsu - Two-color detector
  125. K1713-08 Hamamatsu - Two-color Detector
  126. K1713-09 Hamamatsu - Two-color detector
  127. K3413-01 Hamamatsu - Two-color detector
  128. K3413-02 Hamamatsu - Two-color detector
  129. K3413-05 Hamamatsu - Two-color Detector
  130. K3413-08 Hamamatsu - Two-color detector
  131. K3413-09 Hamamatsu - Two-color detector
  132. K1773 Hitachi - Silicon N-Channel MOS FET
  133. K170 ICST - Low Emi Clock Generator
  134. K142 ICST - Opl3/4+codec Portable Clock Source
  135. K180 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  136. K150 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  137. K120 Knox - Low Level Zener Diodes Very Low Voltage, Low Leakage
  138. K270 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  139. K240 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  140. K210 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  141. K360 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  142. K390 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  143. K300 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  144. K330 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  145. K430 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  146. K470 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  147. K304 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  148. K401 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  149. K402 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  150. K302 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  151. K301 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  152. K404 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  153. K3610 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  154. K3611 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  155. K3620 Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  156. K3621 Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  157. K3630 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  158. K3631 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  159. K3640 Kodenshi - Photocoupler(these Photocouplers Cosist Of Two Gallium Arsenide Infrared Emitting)
  160. K3641 Kodenshi - Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting)
  161. K201 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  162. K202 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  163. K204 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  164. K101 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  165. K102 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  166. K104 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  167. K34100B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  168. K34100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  169. K34100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  170. K34100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  171. K34100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  172. K34100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  173. K34100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  174. K34100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  175. K34100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  176. K34100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  177. K34100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  178. K34100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  179. K34100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  180. K34100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  181. K34100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  182. K34100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  183. K34100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  184. K34100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  185. K34100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  186. K34100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  187. K34100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  188. K34100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  189. K34100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  190. K34100Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  191. K34100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  192. K34100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  193. K34120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  194. K34120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  195. K34120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  196. K34120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  197. K34120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  198. K34120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  199. K34120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  200. K34120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  201. K34120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  202. K34120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  203. K34120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  204. K34120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  205. K34120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  206. K34120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  207. K34120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  208. K34120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  209. K34120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  210. K34120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  211. K34120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  212. K34120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  213. K34120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  214. K34120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  215. K34120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  216. K34120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  217. K34120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  218. K34120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  219. K2160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  220. K2160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  221. K2160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  222. K2160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  223. K2160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  224. K2160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  225. K2160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  226. K2160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  227. K2160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  228. K2160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  229. K2160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  230. K2160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  231. K2160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  232. K2160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  233. K2160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  234. K2160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  235. K2160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  236. K2160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  237. K2160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  238. K2160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  239. K2160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  240. K2160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  241. K2160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  242. K2160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  243. K2160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  244. K2160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  245. K2180B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  246. K2180B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  247. K2180B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  248. K2180C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  249. K2180C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  250. K2180D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  251. K2180D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  252. K2180H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  253. K2180H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  254. K2180M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  255. K2180M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  256. K2180N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  257. K2180N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  258. K2180Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  259. K2180Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  260. K2180V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  261. K2180V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  262. K2180W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  263. K2180W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  264. K2180X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  265. K2180X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  266. K2180Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  267. K2180Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  268. K2180Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  269. K2180Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  270. K2180Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  271. K21100B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  272. K21100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  273. K21100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  274. K21100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  275. K21100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  276. K21100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  277. K21100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  278. K21100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  279. K21100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  280. K21100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  281. K21100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  282. K21100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  283. K21100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  284. K21100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  285. K21100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  286. K21100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  287. K21100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  288. K21100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  289. K21100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  290. K21100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  291. K21100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  292. K21100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  293. K21100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  294. K21100Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  295. K21100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  296. K21100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  297. K21120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  298. K21120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  299. K21120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  300. K21120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  301. K21120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  302. K21120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  303. K21120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  304. K21120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  305. K21120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  306. K21120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  307. K21120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  308. K21120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  309. K21120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  310. K21120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  311. K21120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  312. K21120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  313. K21120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  314. K21120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  315. K21120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  316. K21120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  317. K21120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  318. K21120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  319. K21120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  320. K21120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  321. K21120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  322. K21120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  323. K21160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  324. K21160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  325. K21160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  326. K21160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  327. K21160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  328. K21160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  329. K21160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  330. K21160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  331. K21160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  332. K21160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  333. K21160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  334. K21160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  335. K21160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  336. K21160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  337. K21160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  338. K21160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  339. K21160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  340. K21160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  341. K21160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  342. K21160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  343. K21160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  344. K21160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  345. K21160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  346. K21160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  347. K21160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  348. K21160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  349. K2120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  350. K2120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  351. K2120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  352. K2120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  353. K2120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  354. K2120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  355. K2120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  356. K2120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  357. K2120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  358. K2120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  359. K2120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  360. K2120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  361. K2120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  362. K2120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  363. K2120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  364. K2120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  365. K2120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  366. K2120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  367. K2120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  368. K2120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  369. K2120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  370. K2120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  371. K2120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  372. K2120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  373. K2120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  374. K2120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  375. K2140B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  376. K2140B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  377. K2140B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  378. K2140C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  379. K2140C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  380. K2140D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  381. K2140D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  382. K2140H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  383. K2140H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  384. K2140M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  385. K2140M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  386. K2140N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  387. K2140N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  388. K2140Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  389. K2140Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  390. K2140V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  391. K2140V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  392. K2140W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  393. K2140W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  394. K2140X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  395. K2140X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  396. K2140Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  397. K2140Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  398. K2140Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  399. K2140Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  400. K2140Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  401. K37100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  402. K37100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  403. K37100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  404. K37100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  405. K37100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  406. K37100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  407. K37100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  408. K37100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  409. K37100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  410. K37100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  411. K37100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  412. K37100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  413. K37100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  414. K37100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  415. K37100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  416. K37100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  417. K37100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  418. K37100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  419. K37100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  420. K37100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  421. K37100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  422. K37100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  423. K37100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  424. K37100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  425. K37120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  426. K37120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  427. K37120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  428. K37120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  429. K37120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  430. K37120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  431. K37120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  432. K37120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  433. K37120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  434. K37120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  435. K37120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  436. K37120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  437. K37120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  438. K37120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  439. K37120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  440. K37120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  441. K37120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  442. K37120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  443. K37120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  444. K37120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  445. K37120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  446. K37120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  447. K37120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  448. K37120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  449. K37160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  450. K37160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  451. K37160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  452. K37160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  453. K37160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  454. K37160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  455. K37160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  456. K37160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  457. K37160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  458. K37160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  459. K37160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  460. K37160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  461. K37160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  462. K37160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  463. K37160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  464. K37160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  465. K37160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  466. K37160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  467. K37160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  468. K37160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  469. K37160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  470. K37160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  471. K37160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  472. K37160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  473. K3720B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  474. K3720B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  475. K3720C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  476. K3720C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  477. K3720D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  478. K3720D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  479. K3720H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  480. K3720H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  481. K3720M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  482. K3720M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  483. K3720N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  484. K3720N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  485. K3720Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  486. K3720Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  487. K3720V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  488. K3720V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  489. K3720W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  490. K3720W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  491. K3720X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  492. K3720X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  493. K3720Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  494. K3720Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  495. K3720Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  496. K3720Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  497. K3740B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  498. K3740B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  499. K3740C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  500. K3740C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  501. K3740D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  502. K3740D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  503. K3740H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  504. K3740H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  505. K3740M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  506. K3740M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  507. K3740N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  508. K3740N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  509. K3740Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  510. K3740Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  511. K3740V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  512. K3740V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  513. K3740W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  514. K3740W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  515. K3740X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  516. K3740X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  517. K3740Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  518. K3740Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  519. K3740Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  520. K3740Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  521. K3760B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  522. K3760B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  523. K3760C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  524. K3760C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  525. K3760D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  526. K3760D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  527. K3760H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  528. K3760H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  529. K3760M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  530. K3760M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  531. K3760N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  532. K3760N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  533. K3760Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  534. K3760Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  535. K3760V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  536. K3760V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  537. K3760W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  538. K3760W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  539. K3760X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  540. K3760X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  541. K3760Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  542. K3760Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  543. K3760Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  544. K3760Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  545. K3780B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  546. K3780B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  547. K3780C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  548. K3780C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  549. K3780D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  550. K3780D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  551. K3780H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  552. K3780H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  553. K3780M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  554. K3780M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  555. K3780N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  556. K3780N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  557. K3780Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  558. K3780Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  559. K3780V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  560. K3780V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  561. K3780W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  562. K3780W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  563. K3780X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  564. K3780X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  565. K3780Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  566. K3780Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  567. K3780Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  568. K3780Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  569. K34160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  570. K34160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  571. K34160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  572. K34160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  573. K34160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  574. K34160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  575. K34160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  576. K34160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  577. K34160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  578. K34160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  579. K34160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  580. K34160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  581. K34160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  582. K34160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  583. K34160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  584. K34160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  585. K34160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  586. K34160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  587. K34160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  588. K34160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  589. K34160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  590. K34160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  591. K34160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  592. K34160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  593. K34160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  594. K34160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  595. K3420B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  596. K3420B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  597. K3420B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  598. K3420C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  599. K3420C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  600. K3420D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  601. K3420D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  602. K3420H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  603. K3420H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  604. K3420M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  605. K3420M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  606. K3420N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  607. K3420N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  608. K3420Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  609. K3420Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  610. K3420V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  611. K3420V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  612. K3420W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  613. K3420W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  614. K3420X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  615. K3420X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  616. K3420Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  617. K3420Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  618. K3420Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  619. K3420Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  620. K3420Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  621. K3440B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  622. K3440B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  623. K3440B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  624. K3440C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  625. K3440C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  626. K3440D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  627. K3440D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  628. K3440H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  629. K3440H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  630. K3440M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  631. K3440M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  632. K3440N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  633. K3440N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  634. K3440Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  635. K3440Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  636. K3440V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  637. K3440V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  638. K3440W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  639. K3440W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  640. K3440X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  641. K3440X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  642. K3440Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  643. K3440Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  644. K3440Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  645. K3440Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  646. K3440Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  647. K3460B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  648. K3460B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  649. K3460B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  650. K3460C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  651. K3460C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  652. K3460D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  653. K3460D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  654. K3460H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  655. K3460H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  656. K3460M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  657. K3460M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  658. K3460N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  659. K3460N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  660. K3460Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  661. K3460Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  662. K3460V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  663. K3460V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  664. K3460W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  665. K3460W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  666. K3460X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  667. K3460X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  668. K3460Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  669. K3460Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  670. K3460Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  671. K3460Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  672. K3460Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  673. K3480B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  674. K3480B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  675. K3480B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  676. K3480C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  677. K3480C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  678. K3480D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  679. K3480D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  680. K3480H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  681. K3480H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  682. K3480M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  683. K3480M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  684. K3480N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  685. K3480N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  686. K3480Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  687. K3480Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  688. K3480V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  689. K3480V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  690. K3480W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  691. K3480W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  692. K3480X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  693. K3480X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  694. K3480Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  695. K3480Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  696. K3480Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  697. K3480Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  698. K3480Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  699. K43100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  700. K43100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  701. K43100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  702. K43100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  703. K43100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  704. K43100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  705. K43100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  706. K43100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  707. K43100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  708. K43100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  709. K43100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  710. K43100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  711. K43100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  712. K43100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  713. K43100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  714. K43100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  715. K43100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  716. K43100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  717. K43100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  718. K43100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  719. K43100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  720. K43100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  721. K43100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  722. K43100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  723. K43120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  724. K43120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  725. K43120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  726. K43120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  727. K43120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  728. K43120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  729. K43120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  730. K43120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  731. K43120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  732. K43120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  733. K43120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  734. K43120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  735. K43120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  736. K43120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  737. K43120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  738. K43120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  739. K43120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  740. K43120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  741. K43120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  742. K43120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  743. K43120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  744. K43120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  745. K43120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  746. K43120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  747. K43160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  748. K43160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  749. K43160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  750. K43160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  751. K43160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  752. K43160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  753. K43160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  754. K43160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  755. K43160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  756. K43160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  757. K43160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  758. K43160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  759. K43160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  760. K43160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  761. K43160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  762. K43160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  763. K43160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  764. K43160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  765. K43160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  766. K43160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  767. K43160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  768. K43160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  769. K43160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  770. K43160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  771. K4320B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  772. K4320B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  773. K4320C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  774. K4320C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  775. K4320D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  776. K4320D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  777. K4320H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  778. K4320H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  779. K4320M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  780. K4320M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  781. K4320N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  782. K4320N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  783. K4320Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  784. K4320Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  785. K4320V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  786. K4320V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  787. K4320W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  788. K4320W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  789. K4320X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  790. K4320X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  791. K4320Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  792. K4320Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  793. K4320Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  794. K4320Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  795. K4340B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  796. K4340B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  797. K4340C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  798. K4340C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  799. K4340D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  800. K4340D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  801. K4340H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  802. K4340H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  803. K4340M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  804. K4340M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  805. K4340N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  806. K4340N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  807. K4340Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  808. K4340Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  809. K4340V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  810. K4340V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  811. K4340W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  812. K4340W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  813. K4340X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  814. K4340X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  815. K4340Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  816. K4340Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  817. K4340Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  818. K4340Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  819. K4360B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  820. K4360B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  821. K4360C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  822. K4360C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  823. K4360D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  824. K4360D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  825. K4360H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  826. K4360H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  827. K4360M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  828. K4360M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  829. K4360N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  830. K4360N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  831. K4360Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  832. K4360Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  833. K4360V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  834. K4360V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  835. K4360W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  836. K4360W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  837. K4360X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  838. K4360X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  839. K4360Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  840. K4360Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  841. K4360Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  842. K4360Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  843. K4380B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  844. K4380B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  845. K4380C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  846. K4380C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  847. K4380D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  848. K4380D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  849. K4380H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  850. K4380H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  851. K4380M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  852. K4380M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  853. K4380N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  854. K4380N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  855. K4380Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  856. K4380Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  857. K4380V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  858. K4380V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  859. K4380W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  860. K4380W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  861. K4380X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  862. K4380X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  863. K4380Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  864. K4380Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  865. K4380Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  866. K4380Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  867. K3-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  868. K3-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  869. K3-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  870. K3-ERASM Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  871. K3-GALI_GVA+ Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  872. K3-GAT+ Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  873. K3-LFCN+ Mini-Circuits - KIT FILTER / SURF MT/T&R/ RoHS
  874. K1-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  875. K1-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  876. K1-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  877. K1-VAT2+ Mini-Circuits - KIT PWR SPLTR CMBD / SMA/ RoHS
  878. K2-BW1+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  879. K2-BW2+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  880. K2-BW3+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  881. K2-DBTC Mini-Circuits - KIT DIR COUP / SURF MOUNT/RoHS
  882. K2-ERA Mini-Circuits - KIT ML AMPL / Sn
  883. K2-GAT Mini-Circuits - KIT FXD ATTEN / SURF MOUNT
  884. K2-HAT Mini-Circuits - KIT FXD ATTEN / BNC
  885. K2-HAT+ Mini-Circuits - KIT FXD ATTEN / BNC / RoHS
  886. K2-HFCN+ Mini-Circuits - KIT HI PAS FLTR / SURF MT/RoHS
  887. K2-LFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  888. K2-MNA Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  889. K2-PAT+ Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  890. K2-SBTC+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  891. K2-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  892. K2-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  893. K2-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  894. K2-VAT2+ Mini-Circuits - KIT DIR COUP / SURF MT / RoHS
  895. K1-ADP+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  896. K1-SBTC+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  897. K1-DBTC Mini-Circuits - KIT DIR COUP / SURF MT / RoHS
  898. K1-ERA Mini-Circuits - KIT ML AMPL / Sn
  899. K1-ERASM Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  900. K1-GAT+ Mini-Circuits - KIT FXD ATTEN / SURF MOUNT
  901. K1-HAT Mini-Circuits - KIT FXD ATTEN / BNC
  902. K1-HAT+ Mini-Circuits - KIT FXD ATTEN / BNC / RoHS
  903. K1-HFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  904. K1-LAT Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  905. K1-LAVI+ Mini-Circuits - KIT DBL BAL MIX / SURF MT/RoHS
  906. K1-LEE Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  907. K1-LFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  908. K1-MAN Mini-Circuits - KIT BROADBAND AMPL
  909. K1-MNA Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  910. K1-PAT Mini-Circuits - KIT FXD ATTEN / SURF MT / Sn
  911. K4-DBTC-75L+ Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  912. k246 NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  913. K2141 NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  914. K3296 NEC - MOS FIELD EFFECT TRANSISTOR
  915. K02C National Semiconductor - Metal Can, To-3 2 Lead Low Profile
  916. k246 Rohm - Small switching (60V, 2A)
  917. K2740 Rohm - Switching (600V, 7A)
  918. K4C560838C Samsung - K4C560838C 256Mb Network-dram ; Organization = 32Mx8 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  919. K4C560838C-TC Samsung - K4C560838C 256Mb Network-dram ; Organization = 32Mx8 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  920. K4C560838C-TCD3 Samsung - 256mb Network-dram
  921. K4C560838C-TCD4 Samsung - 256Mb Network-DRAM
  922. K4C560838C-TCDA Samsung - 256Mb Network-DRAM
  923. K4C561638C Samsung - K4C561638C 256Mb Network-dram ; Organization = 16Mx16 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  924. K4C561638C-TC Samsung - K4C561638C 256Mb Network-dram ; Organization = 16Mx16 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  925. K4C561638C-TCD3 Samsung - 256Mb Network-DRAM
  926. K4C561638C-TCD4 Samsung - 256Mb Network-DRAM
  927. K4C561638C-TCD4000 Samsung - 256Mb Network-DRAM
  928. K4C561638C-TCDA Samsung - 256Mb Network-DRAM
  929. K4C89083AF-ACF5 Samsung - 288mb X18 Network-dram2 Specification
  930. K4C89083AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  931. K4C89083AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  932. K4C89083AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  933. K4C89083AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  934. K4C89083AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  935. K4C89083AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  936. K4C89083AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  937. K4C89083AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  938. K4C89083AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  939. K4C89083AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  940. K4C89083AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  941. K4C89093AF Samsung - K4C89093AF 8,388,608-WORDS X 4 Banks X 9-BITS Double Data Rate Network-dram ; Organization = 32Mx9 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 60FBGA ; Production Status = Engineering Sample:Q4\'2003 ; Comments = Target Spec
  942. K4C89093AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  943. K4C89093AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  944. K4C89093AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  945. K4C89093AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  946. K4C89093AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  947. K4C89093AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  948. K4C89093AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  949. K4C89093AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  950. K4C89093AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  951. K4C89093AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  952. K4C89093AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  953. K4C89093AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  954. K4C89163AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  955. K4C89163AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  956. K4C89163AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  957. K4C89163AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  958. K4C89163AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  959. K4C89163AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  960. K4C89163AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  961. K4C89163AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  962. K4C89163AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  963. K4C89163AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  964. K4C89163AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  965. K4C89163AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  966. K4C89183AF Samsung - 288Mb x18 Network-DRAM2 Specification
  967. K4C89183AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  968. K4C89183AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  969. K4C89183AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  970. K4C89183AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  971. K4C89183AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  972. K4C89183AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  973. K4C89183AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  974. K4C89183AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  975. K4C89183AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  976. K4C89183AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  977. K4C89183AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  978. K4C89183AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  979. K4C89363AF Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  980. K4C89363AF-GCF5 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  981. K4C89363AF-GCF6 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  982. K4C89363AF-GCFB Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  983. K4C89363AF-GIF5 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  984. K4D261638 Samsung - 128mbit Gddr Sdram
  985. K4D261638E Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  986. K4D261638E-TC2A Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  987. K4D261638E-TC33 Samsung - 2m X 16bit X 4 Banks Double Data Rate Synchronous Dram
  988. K4D261638E-TC36 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  989. K4D261638E-TC40 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  990. K4D261638E-TC50 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  991. K4D261638F Samsung - 128Mbit GDDR SDRAM
  992. K4D261638F-TC25 Samsung - 128Mbit GDDR SDRAM
  993. K4D261638F-TC2A Samsung - 128Mbit GDDR SDRAM
  994. K4D261638F-TC33 Samsung - 128Mbit GDDR SDRAM
  995. K4D261638F-TC36 Samsung - 128Mbit GDDR SDRAM
  996. K4D261638F-TC40 Samsung - 128Mbit GDDR SDRAM
  997. K4D261638F-TC50 Samsung - 128Mbit GDDR SDRAM
  998. K4D263238A Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  999. K4D263238A-GC Samsung - K4D263238A 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 3.3,3.6,4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1000. K4D263238A-GC33 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1001. K4D263238A-GC36 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  1002. K4D263238A-GC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1003. K4D263238A-GC45 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1004. K4D263238A-GC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1005. K4D263238D Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1006. K4D263238D-QC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1007. K4D263238D-QC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1008. K4D263238E Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1009. K4D263238E-GC Samsung - K4D263238E-GC 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8,2.375~2.94 ; Speed(ns) = 2.5,2A,3.3,3.6,4.0,4.5 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1010. K4D263238E-GC25 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1011. K4D263238E-GC2A Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1012. K4D263238E-GC33 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1013. K4D263238E-GC36 Samsung - 1m X 32bit X 4 Banks Graphic Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  1014. K4D263238E-GC40 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1015. K4D263238E-GC45 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1016. K4D263238F Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1017. K4D263238F-QC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1018. K4D263238F-QC50 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  1019. K4D263238G-GC Samsung - 128Mbit GDDR SDRAM
  1020. K4D263238G-GC2A Samsung - 128Mbit GDDR SDRAM
  1021. K4D263238G-GC33 Samsung - 128Mbit GDDR SDRAM
  1022. K4D263238G-GC36 Samsung - 128Mbit GDDR SDRAM
  1023. K4D263238G-VC Samsung - 128mbit Gddr Sdram
  1024. K4D263238M Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1025. K4D263238M-QC45 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1026. K4D263238M-QC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1027. K4D263238M-QC55 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1028. K4D263238M-QC60 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe and Dll
  1029. K4D26323AA Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1030. K4D26323AA-GL Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1031. K4D26323AA-GL40 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1032. K4D26323AA-GL45 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1033. K4D26323AA-GL50 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1034. K4D26323QG Samsung - 128Mbit GDDR SDRAM
  1035. K4D26323QG-GC25 Samsung - 128mbit Gddr Sdram
  1036. K4D26323QG-GC2A Samsung - 128Mbit GDDR SDRAM
  1037. K4D26323QG-GC33 Samsung - 128Mbit GDDR SDRAM
  1038. K4D26323RA Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe and Dll
  1039. K4D26323RA-GC Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1040. K4D26323RA-GC2A Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1041. K4D26323RA-GC33 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1042. K4D26323RA-GC36 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1043. K4D28163HD Samsung - 128mbit Ddr Sdram
  1044. K4D28163HD-TC36 Samsung - 128Mbit DDR SDRAM
  1045. K4D28163HD-TC40 Samsung - 128Mbit DDR SDRAM
  1046. K4D28163HD-TC50 Samsung - 128Mbit DDR SDRAM
  1047. K4D28163HD-TC60 Samsung - 128Mbit DDR SDRAM
  1048. K4D551638D Samsung - 256mbit Gddr Sdram
  1049. K4D551638D-TC Samsung - 256Mbit GDDR SDRAM
  1050. K4D551638D-TC2A Samsung - 256Mbit GDDR SDRAM
  1051. K4D551638D-TC33 Samsung - 256Mbit GDDR SDRAM
  1052. K4D551638D-TC36 Samsung - 256Mbit GDDR SDRAM
  1053. K4D551638D-TC40 Samsung - 256Mbit GDDR SDRAM
  1054. K4D551638D-TC45 Samsung - 256Mbit GDDR SDRAM
  1055. K4D551638D-TC50 Samsung - 256Mbit GDDR SDRAM
  1056. K4D551638D-TC60 Samsung - 256Mbit GDDR SDRAM
  1057. K4D551638F-TC Samsung - 256Mbit GDDR SDRAM
  1058. K4D551638F-TC33 Samsung - 256Mbit GDDR SDRAM
  1059. K4D551638F-TC36 Samsung - 256Mbit GDDR SDRAM
  1060. K4D551638F-TC40 Samsung - 256mbit Gddr Sdram
  1061. K4D551638F-TC50 Samsung - 256Mbit GDDR SDRAM
  1062. K4D551638F-TC60 Samsung - 256Mbit GDDR SDRAM
  1063. K4D553235F-GC Samsung - 256M GDDR SDRAM
  1064. K4D553235F-GC25 Samsung - 256M GDDR SDRAM
  1065. K4D553235F-GC2A Samsung - 256m Gddr Sdram
  1066. K4D553235F-GC33 Samsung - 256M GDDR SDRAM
  1067. K4D553238E Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1068. K4D553238E-JC Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1069. K4D553238E-JC33 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1070. K4D553238E-JC36 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1071. K4D553238E-JC40 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1072. K4D553238E-JC50 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1073. K4D553238F Samsung - 256mbit Gddr Sdram
  1074. K4D553238F-GC Samsung - 256Mbit GDDR SDRAM
  1075. K4D553238F-GC2A Samsung - 256Mbit GDDR SDRAM
  1076. K4D553238F-GC33 Samsung - 256Mbit GDDR SDRAM
  1077. K4D553238F-GC36 Samsung - 256Mbit GDDR SDRAM
  1078. K4D553238F-JC Samsung - 256Mbit GDDR SDRAM
  1079. K4D553238F-JC2A Samsung - 256Mbit GDDR SDRAM
  1080. K4D553238F-JC33 Samsung - 256Mbit GDDR SDRAM
  1081. K4D553238F-JC36 Samsung - 256mbit Gddr Sdram
  1082. K4D553238F-JC40 Samsung - 256Mbit GDDR SDRAM
  1083. K4D553238F-JC50 Samsung - 256Mbit GDDR SDRAM
  1084. K4D623237A Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1085. K4D623237A-QC55 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1086. K4D623237A-QC60 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1087. K4D623237A-QC70 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1088. K4D623237M Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1089. K4D623237M-QC10 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1090. K4D623237M-QC60 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1091. K4D623237M-QC70 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1092. K4D623237M-QC80 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1093. K4D623238B Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1094. K4D623238B-GC Samsung - 64mbit Ddr Sdram
  1095. K4D623238B-GC33 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1096. K4D623238B-GC40 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1097. K4D623238B-GC45 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1098. K4D623238B-GC50 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1099. K4D623238B-GC55 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1100. K4D623238B-GC60 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1101. K4D623238B-GC/L33 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1102. K4D623238B-GC/L40 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1103. K4D623238B-GC/L45 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1104. K4D623238B-GC/L50 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1105. K4D623238B-GC/L55 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1106. K4D623238B-GC/L60 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1107. K4D623238F Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  1108. K4D623238F-QC Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  1109. K4D623238F-QC40 Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  1110. K4D623238F-QC50 Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  1111. K4D62323HA Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1112. K4D62323HA-QC55 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1113. K4D62323HA-QC60 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1114. K4D62323HA-QC70 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1115. K4D64163HE Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1116. K4D64163HE-TC40 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1117. K4D64163HE-TC45 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1118. K4D64163HE-TC50 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1119. K4D64163HE-TC55 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1120. K4D64163HE-TC60 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1121. K4D64163HF Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1122. K4D64163HF-TC33 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1123. K4D64163HF-TC36 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1124. K4D64163HF-TC40 Samsung - 1m X 16bit X 4 Banks Double Data Rate Synchronous Dram
  1125. K4D64163HF-TC50 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1126. K4D64163HF-TC60 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1127. K1S161611A Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  1128. K1S161611A-I Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  1129. K1S16161CA Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
  1130. K1S16161CA-I Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
  1131. K1S1616B1A Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  1132. K1S1616B1A-BI70 Samsung - 1mx16 Bit Uni-transistor Random Access Memory
  1133. K1S1616B1A-BI85 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  1134. K1S1616B1A-FI70 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  1135. K1S1616B1A-FI85 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  1136. K1S1616B1A-I Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  1137. K1S1616BCA Samsung - 1mx16 Bit Page Mode Uni-transistor Random Access Memory
  1138. K1S1616BCA-I Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access MemoryThe K1S1616BCA is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  1139. K1S2816BCM Samsung - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  1140. K1S2816BCM-I Samsung - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  1141. K1S321611C Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  1142. K1S321611C-FI70 Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  1143. K1S321611C-I Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  1144. K1S321615M Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  1145. K1S321615M-E Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  1146. K1S3216B1C Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  1147. K1S3216B1C-I Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  1148. K1S3216BCC Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  1149. K1S3216BCC-FI70 Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  1150. K1S3216BCC-FI85 Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  1151. K1S3216BCD Samsung - 2mx16 Bit Page Mode Uni-transistor Random Access Memory
  1152. K1S3216BCD-I Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCD is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  1153. K1S64161CC Samsung - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
  1154. K1S64161CC-I Samsung - 4M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S64161CC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  1155. K1S6416BCC Samsung - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
  1156. K1S6416BCC-I Samsung - 4Mx16 bit Page Mode Uni-Transistor Random Access Memory
  1157. K1B3216B7D Samsung - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance feature.
  1158. K1B3216BDD Samsung - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  1159. K1B5616BAM Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  1160. K1B5616BAM-I Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  1161. K1B5616BBM Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  1162. K1B5616BBM-I Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  1163. K1B6416B6C Samsung - 4mx16 Bit Synchronous Burst Uni-transistor Random Access Memory
  1164. K1B6416B6C-I Samsung - 4M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  1165. K3N3C1000D Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1166. K3N3C1000D-DC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1167. K3N3C1000D-DGC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1168. K3N3C1000D-GC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1169. K3N3C1000D-TCE Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1170. K3N3C3000D Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1171. K3N3C3000D-DGC Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1172. K3N3C3000D-GC Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1173. K3N3C3000D-YCE Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1174. K3N3C6000D Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1175. K3N3C6000D-DC Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1176. K3N3C6000D-DC08 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1177. K3N3C6000D-DC10 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1178. K3N3C6000D-DC12 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1179. K3N3U1000D Samsung - K3N3U1000D,K3N3V1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1180. K3N3U3000D Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1181. K3N3U3000D-AC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1182. K3N3U3000D-AE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1183. K3N3U3000D-DC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1184. K3N3U3000D-YC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1185. K3N3U3000D-YE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1186. K3N3V1000D Samsung - K3N3U1000D, K3N3V1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1187. K3N3V3000D Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1188. K3N3V3000D-AC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1189. K3N3V3000D-AE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1190. K3N3V3000D-GC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1191. K3N3V3000D-YC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1192. K3N3V3000D-YE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1193. K3N3V6000D Samsung - K3N3V6000D 4M-Bit (256K X 16) CMOS Mask ROM(ePROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 40DIP ; Current (mA/uA) = 20,25/30 ; Production Status = Eol ; Comments = EPROM Type
  1194. K3N4C1000D Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1195. K3N4C1000D-DC Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1196. K3N4C1000D-DG Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1197. K3N4C1000D-TC Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1198. K3N4C1000D-TCE Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1199. K3N4C1000D-TE Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1200. K3N4C1000E Samsung - K3N4C1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  1201. K3N4C3000D Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1202. K3N4C3000D-DC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1203. K3N4C3000D-DGC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1204. K3N4C3000D-GC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1205. K3N4U1000D Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1206. K3N4U1000D-DGC Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1207. K3N4U1000D-TCE Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1208. K3N4U3000D Samsung - K3N4U3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1209. K3N4U3000D-DGC Samsung - K3N4U3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1210. K3N4V1000D Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1211. K3N4V1000D-DGC Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1212. K3N4V1000D-TCE Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1213. K3N4V1000E Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1214. K3N4V1000E-DC10 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1215. K3N4V1000E-DC12 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1216. K3N4V1000E-GC10 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1217. K3N4V1000E-GC12 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1218. K3N4V3000D Samsung - K3N4V3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1219. K3N4V3000D-DGC Samsung - K3N4V3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1220. K3N5C1000D Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1221. K3N5C1000D-DC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1222. K3N5C1000D-DGC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1223. K3N5C1000D-GC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1224. K3N5C1000E Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1225. K3N5C1000E-TC Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1226. K3N5C1000E-TC10 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1227. K3N5C1000E-TC12 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1228. K3N5C1000E-TC15 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1229. K3N5U1000D Samsung - K3N5U1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1230. K3N5U1000E Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1231. K3N5U1000E-DC12 Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1232. K3N5U1000E-GC12 Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1233. K3N5U1000F Samsung - K3N5U1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1234. K3N5V1000D Samsung - K3N5V1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1235. K3N5V1000E Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1236. K3N5V1000E-DC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1237. K3N5V1000E-DC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1238. K3N5V1000E-GC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1239. K3N5V1000E-GC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1240. K3N5V1000F Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1241. K3N5V1000F-DC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1242. K3N5V1000F-DC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1243. K3N5V1000F-GC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1244. K3N5V1000F-GC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1245. K3N6C1000C Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1246. K3N6C1000C-GC Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1247. K3N6C1000C-TC Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1248. K3N6C1000C-TCE Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1249. K3N6C1000C-TE Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1250. K3N6C1000E Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1251. K3N6C1000E-TC Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1252. K3N6C1000E-TC10 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1253. K3N6C1000E-TC12 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1254. K3N6C1000E-TC15 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1255. K3N6C1000F Samsung - K3N6C1000F 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  1256. K3N6C1000F-C Samsung - K3N6C1000F 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  1257. K3N6C3000C Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1258. K3N6C3000C-DC Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1259. K3N6C3000C-DC10 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1260. K3N6C3000C-DC12 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1261. K3N6C3000C-DC15 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1262. K3N6C3000E Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1263. K3N6C3000E-DC Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1264. K3N6C3000E-DC10 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1265. K3N6C3000E-DC12 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1266. K3N6C3000E-DC15 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1267. K3N6C4000C Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1268. K3N6C4000C-DC Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1269. K3N6C4000C-DC10 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1270. K3N6C4000C-DC12 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1271. K3N6C4000C-DC15 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1272. K3N6C4000E Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1273. K3N6C4000E-DC Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1274. K3N6C4000E-DC10 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1275. K3N6C4000E-DC12 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1276. K3N6C4000E-DC15 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1277. K3N6S1000D Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1278. K3N6S1000D-YC Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1279. K3N6S1000D-YCE Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1280. K3N6S1000D-YE Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1281. K3N6U1000C Samsung - K3N6U1000C / K3N6V1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8/2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1282. K3N6U1000D Samsung - K3N6U1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1283. K3N6U1000E Samsung - K3N6U1000E 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1284. K3N6U1000E-GC12 Samsung - K3N6U1000E 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1285. K3N6U1000F Samsung - K3N6U1000F / K3N6V1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1286. K3N6U4000C Samsung - K3N6U4000C / K3N6V4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 150 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1287. K3N6U4000E Samsung - K3N6U4000E / K3N6V4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1288. K3N6U4000E-DC12 Samsung - K3N6U4000E / K3N6V4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1289. K3N6V1000C Samsung - K3N6V1000C / K3N6U1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8/2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 10(50pF) ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1290. K3N6V1000D Samsung - K3N6V1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1291. K3N6V1000E Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1292. K3N6V1000E-GC10 Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1293. K3N6V1000E-GC12 Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1294. K3N6V1000F Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1295. K3N6V1000F-GC10 Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1296. K3N6V1000F-GC12 Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1297. K3N6V4000C Samsung - K3N6V4000C / K3N6U4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1298. K3N6V4000E Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1299. K3N6V4000E-DC10 Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1300. K3N6V4000E-DC12 Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1301. K3N7C1000B Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1302. K3N7C1000B-GC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1303. K3N7C1000B-TC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1304. K3N7C1000B-YC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1305. K3N7C1000B-YC10 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1306. K3N7C1000B-YC12 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1307. K3N7C1000B-YC15 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1308. K3N7C1000C Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1309. K3N7C1000C-GC Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1310. K3N7C1000C-GC10 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1311. K3N7C1000C-GC12 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1312. K3N7C1000C-GC15 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1313. K3N7C1000M Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1314. K3N7C1000M-GC Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1315. K3N7C1000M-TC Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1316. K3N7C1000M-TC12 Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1317. K3N7C1000M-TC15 Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1318. K3N7C3000M Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1319. K3N7C3000M-DC Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1320. K3N7C3000M-DC12 Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1321. K3N7C3000M-DC15 Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1322. K3N7C4000B Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1323. K3N7C4000B-DC Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1324. K3N7C4000B-DC10 Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1325. K3N7C4000B-DC12 Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1326. K3N7C4000C Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1327. K3N7C4000C-DC Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1328. K3N7C4000C-DC10 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1329. K3N7C4000C-DC12 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1330. K3N7C4000C-DC15 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1331. K3N7C4000M Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1332. K3N7C4000M-DC Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1333. K3N7C4000M-DC12 Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1334. K3N7C4000M-DC15 Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1335. K3N7U1000A Samsung - K3N7U1000A 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1336. K3N7U1000B Samsung - K3N7U1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1337. K3N7U1000B-YC12 Samsung - K3N7U1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1338. K3N7U1000C Samsung - K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1339. K3N7U1000C-GC12 Samsung - K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1340. K3N7U4000B Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1341. K3N7U4000B-DC Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1342. K3N7U4000B-DC12 Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1343. K3N7U4000C Samsung - K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1344. K3N7U4000C-DC12 Samsung - K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1345. K3N7V1000A Samsung - K3N7V1000A 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1346. K3N7V1000B Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1347. K3N7V1000B-YC10 Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1348. K3N7V1000B-YC12 Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1349. K3N7V1000C Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1350. K3N7V1000C-GC10 Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1351. K3N7V1000C-GC12 Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1352. K3N7V4000B Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1353. K3N7V4000B-DC Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1354. K3N7V4000B-DC10 Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1355. K3N7V4000B-DC12 Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1356. K3N7V4000C Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1357. K3N7V4000C-DC10 Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1358. K3N7V4000C-DC12 Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1359. K3N9U1000A Samsung - K3N9U1000A 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1360. K3N9U1000A-YC12 Samsung - K3N9U1000A 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1361. K3N9U1000M Samsung - K3N9U1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48 TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1362. K3N9U4000A Samsung - K3N9U4000A 128M-Bit (8M X 16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1363. K3N9U4000A-GC12 Samsung - K3N9U4000A 128M-Bit (8M X 16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1364. K3N9V1000A Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1365. K3N9V1000A-YC10 Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1366. K3N9V1000A-YC12 Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1367. K3N9V1000M Samsung - K3N9V1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1368. K3N9V1000M-YCK3N9U1000M-YC Samsung - K3N9V1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1369. K3N9V4000A Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1370. K3N9V4000A-GC10 Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1371. K3N9V4000A-GC12 Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1372. K3P4C1000D Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1373. K3P4C1000D-DGC Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1374. K3P4C1000D-TC Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1375. K3P4C1000D-TCE Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1376. K3P4C1000D-TE Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1377. K3P4C1000E Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1378. K3P4C1000E-DC Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1379. K3P4C1000E-DC10 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1380. K3P4C1000E-DC12 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1381. K3P4C1000E-DC15 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1382. K3P4C1000E-GC Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1383. K3P4C1000E-GC10 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1384. K3P4C1000E-GC12 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1385. K3P4C1000E-GC15 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1386. K3P4U1000D Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1387. K3P4U1000D-DC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1388. K3P4U1000D-GC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1389. K3P4U1000D-TC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1390. K3P4U1000D-TE Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1391. K3P4V1000D Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1392. K3P4V1000D-DC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1393. K3P4V1000D-GC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1394. K3P4V1000D-TC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1395. K3P4V1000D-TE Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1396. K3P4V1000E Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1397. K3P4V1000E-DC10 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1398. K3P4V1000E-DC12 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1399. K3P4V1000E-GC10 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1400. K3P4V1000E-GC12 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1401. K3P5C1000D Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1402. K3P5C1000D-DGC Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1403. K3P5C1000D-TC Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1404. K3P5C1000D-TC10 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1405. K3P5C1000D-TC12 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1406. K3P5C1000D-TC15 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1407. K3P5C1000F Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1408. K3P5C1000F-DC Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1409. K3P5C1000F-DC10 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1410. K3P5C1000F-DC12 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1411. K3P5C1000F-DC15 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1412. K3P5C1000F-GC Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1413. K3P5C1000F-GC10 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1414. K3P5C1000F-GC12 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1415. K3P5C1000F-GC15 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1416. K3P5C2000D Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1417. K3P5C2000D-SC Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1418. K3P5C2000D-SC10 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1419. K3P5C2000D-SC12 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1420. K3P5C2000D-SC15 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1421. K3P5U1000D Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1422. K3P5U1000D-DC Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1423. K3P5U1000D-GC Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1424. K3P5U1000F Samsung - K3P5U1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1425. K3P5U1000F-TC12 Samsung - K3P5U1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1426. K3P5U2000D Samsung - K3P5U2000D / K3P5V2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 3.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1427. K3P5V1000D Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1428. K3P5V1000D-DC Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1429. K3P5V1000D-GC Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1430. K3P5V1000F Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1431. K3P5V1000F-TC10 Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1432. K3P5V1000F-TC12 Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1433. K3P5V2000D Samsung - K3P5V2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1434. K3P6C1000B Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1435. K3P6C1000B-GC Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1436. K3P6C1000B-TC Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1437. K3P6C1000B-TC10 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1438. K3P6C1000B-TC12 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1439. K3P6C1000B-TC15 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1440. K3P6C1000F Samsung - K3P6C1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = -
  1441. K3P6C1000F-GC Samsung - K3P6C1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = -
  1442. K3P6C2000B Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1443. K3P6C2000B-SC Samsung - 32m-bit (2mx16 /1mx32) Cmos Mask Rom
  1444. K3P6C2000B-SC10 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1445. K3P6C2000B-SC12 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1446. K3P6C2000B-SC15 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1447. K3P6S1000D Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1448. K3P6S1000D-YC Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1449. K3P6S1000D-YCE Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1450. K3P6S1000D-YE Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1451. K3P6U1000D Samsung - K3P6U1000D 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1452. K3P6U1000F Samsung - K3P6U1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = -
  1453. K3P6V1000B Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1454. K3P6V1000B-GC Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1455. K3P6V1000B-TC Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1456. K3P6V1000B-TCE Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1457. K3P6V1000D Samsung - K3P6V1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1458. K3P6V1000F Samsung - K3P6V1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = -
  1459. K3P6V2000B Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1460. K3P6V2000B-SC Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1461. K3P6V2000B-SC10 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1462. K3P6V2000B-SC12 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1463. K3P6V2000B-SC15 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1464. K3P7C1000B Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1465. K3P7C1000B-GC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1466. K3P7C1000B-TC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1467. K3P7C1000B-YC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1468. K3P7C1000B-YC10 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1469. K3P7C1000B-YC12 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1470. K3P7C1000B-YC15 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1471. K3P7U1000A Samsung - K3P7U1000A 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40),100(30) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1472. K3P7U1000B Samsung - K3P7U1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1473. K3P7U1000B-YC12 Samsung - K3P7U1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1474. K3P7U2000A Samsung - K3P7U2000A 64M-Bit(4Mx16/2Mx32) CMOS Mask ROM ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1475. K3P7V1000 Samsung - 64m-bit (8mx8 /4mx16) Cmos Mask Rom
  1476. K3P7V1000A Samsung - K3P7V1000A 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1477. K3P7V1000B Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1478. K3P7V1000B-YC Samsung - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
  1479. K3P7V1000B-YC10 Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1480. K3P7V1000B-YC12 Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1481. K3P7V2000A Samsung - K3P7V2000A 64M-Bit(4Mx16,2Mx32) CMOS Mask ROM ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1482. K3P7VU1000B-YC Samsung - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
  1483. K3P9U1000A Samsung - K3P9U1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1484. K3P9U1000A-YC12 Samsung - K3P9U1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1485. K3P9U1000M Samsung - K3P9U1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1486. K3P9U1000M-YC Samsung - K3P9U1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1487. K3P9U2000M Samsung - K3P9U2000M 128M-Bit (8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1488. K3P9U2000M-SC Samsung - K3P9U2000M 128M-Bit (8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1489. K3P9U4000A Samsung - K3P9U4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1490. K3P9U4000A-GC12 Samsung - K3P9U4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1491. K3P9V1000A Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1492. K3P9V1000A-YC10 Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1493. K3P9V1000A-YC12 Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1494. K3P9V1000M Samsung - K3P9V1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1495. K3P9V1000M-YC Samsung - K3P9V1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1496. K3P9V2000M Samsung - K3P9V2000M 128M-Bit(8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1497. K3P9V2000M-SC Samsung - K3P9V2000M 128M-Bit(8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1498. K3P9V4000A Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1499. K3P9V4000A-GC10 Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1500. K3P9V4000A-GC12 Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1501. K3S6V2000M Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1502. K3S6V2000M-TC Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1503. K3S6V2000M-TC15 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1504. K3S6V2000M-TC20 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1505. K3S6V2000M-TC30 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1506. K3S7V2000M Samsung - K3S7V2000M 2M X 32 Synchronous Maskrom ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.3 ; Speed(MHz) = 33,50,66,83,100 ; Package = 86TSOP2 ; Production Status = Mass Production ; Comments = -
  1507. K3S7V2000M-TC Samsung - 64m-bit (4mx16 /2mx32) Synchronous Maskrom
  1508. K3S7V2000M-TC10 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1509. K3S7V2000M-TC12 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1510. K3S7V2000M-TC15 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1511. K3S7V2000M-TC20 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1512. K3S7V2000M-TC30 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1513. K4E151611C Samsung - K4E640412B 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1514. K4E151611D Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1515. K4E151611D-J Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1516. K4E151611D-T Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1517. K4E151612C Samsung - K4E151612C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1518. K4E151612D Samsung - 1m X 16bit Cmos Dynamic Ram With Extended Data Out
  1519. K4E151612D-J Samsung - K4E151612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1520. K4E151612D-T Samsung - K4E151612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1521. K4E160411C Samsung - K4E170411C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1522. K4E160411D Samsung - 4m X 4bit Cmos Dynamic Ram With Extended Data Out
  1523. K4E160411D-B Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1524. K4E160411D-F Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1525. K4E160412C Samsung - K4E170412C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1526. K4E160412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1527. K4E160412D-B Samsung - K4E160412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1528. K4E160412D-F Samsung - K4E160412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1529. K4E160811C Samsung - K4E170811C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2-300 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1530. K4E160811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1531. K4E160811D-B Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1532. K4E160811D-F Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1533. K4E160812C Samsung - K4E170812C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1534. K4E160812D Samsung - 2m X 8bit Cmos Dynamic Ram With Extended Data Out
  1535. K4E160812D-B Samsung - K4E160812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1536. K4E160812D-F Samsung - K4E160812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1537. K4E170411C Samsung - K4E170411C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1538. K4E170411D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1539. K4E170411D-B Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1540. K4E170411D-F Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1541. K4E170412C Samsung - K4E170412C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1542. K4E170412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1543. K4E170412D-B Samsung - K4E170412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1544. K4E170412D-F Samsung - K4E170412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1545. K4E170811C Samsung - K4E170811C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2-300 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1546. K4E170811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1547. K4E170811D-B Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1548. K4E170811D-F Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1549. K4E170812C Samsung - K4E170812C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1550. K4E170812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1551. K4E170812D-B Samsung - K4E170812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1552. K4E170812D-F Samsung - K4E170812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1553. K4E171611C Samsung - K4E171611C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1554. K4E171611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
  1555. K4E171611D-J Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1556. K4E171611D-T Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1557. K4E171612C Samsung - K4E171612C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1558. K4E171612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
  1559. K4E171612D-J Samsung - K4E171612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1560. K4E171612D-T Samsung - K4E171612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1561. K4E640411B Samsung - K4E660411B 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1562. K4E640411C Samsung - K4E640411C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1563. K4E640411D Samsung - K4E640411D 16MB X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1564. K4E640411D-JC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1565. K4E640411D-JC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1566. K4E640411D-TC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1567. K4E640411D-TC60 Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1568. K4E640412B Samsung - M374F3200BJ1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*36+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1569. K4E640412C Samsung - K4E660412C 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1570. K4E640412D Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1571. K4E640412D-JC/L Samsung - M374F1600DJ1 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*18+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1572. K4E640412D-TC/L Samsung - M374F1600DJ1 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*18+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1573. K4E640412E Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1574. K4E640412E-JI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1575. K4E640412E-JI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1576. K4E640412E-JI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1577. K4E640412E-JP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1578. K4E640412E-JP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1579. K4E640412E-JP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1580. K4E640412E-TI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1581. K4E640412E-TI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1582. K4E640412E-TI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1583. K4E640412E-TP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1584. K4E640412E-TP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1585. K4E640412E-TP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1586. K4E640811B Samsung - K4E640811B 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1587. K4E640811C Samsung - K4E640811C 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1588. K4E640811D Samsung - K4E640811D 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1589. K4E640812B Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1590. K4E640812C Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1591. K4E640812D Samsung - M374F0803DJ1 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 64 ; Organization = 8Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (8Mx8)*9+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1592. K4E640812D-J Samsung - M374F0803DJ3 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode ; Density(MB) = 64 ; Organization = 8Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (8Mx8)*9+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1593. K4E640812E Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1594. K4E641611B Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1595. K4E641611B-45 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1596. K4E641611B-50 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1597. K4E641611B-60 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1598. K4E641611C Samsung - K4E641611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1599. K4E641611D Samsung - K4E641611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1600. K4E641612B Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1601. K4E641612B-L Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1602. K4E641612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1603. K4E641612C Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1604. K4E641612C-45 Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1605. K4E641612C-50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1606. K4E641612C-60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1607. K4E641612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1608. K4E641612C-T Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1609. K4E641612C-T45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1610. K4E641612C-T50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1611. K4E641612C-T60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1612. K4E641612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1613. K4E641612C-TC45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1614. K4E641612C-TC50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1615. K4E641612C-TC60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1616. K4E641612C-TL45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1617. K4E641612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1618. K4E641612C-TL60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1619. K4E641612D Samsung - Cmos Dram
  1620. K4E641612D-T Samsung - M366F0804DT1 8Mx64 DRAM Dimm Using 4Mx16,8K&4K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)*8+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1621. K4E641612E Samsung - K4E641612E 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1622. K4E6601611B Samsung - M364E0884BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x8+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1623. K4E660411B Samsung - M372E3280BJ0 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1624. K4E660411C Samsung - K4E660411C 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1625. K4E660411D Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1626. K4E660411D-JC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1627. K4E660411D-JC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1628. K4E660411D-TC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1629. K4E660411D-TC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1630. K4E660412B Samsung - K4E660412B 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1631. K4E660412C Samsung - M366F1680CJ2 16Mx64 DRAM Dimm Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*16+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1632. K4E660412C-J Samsung - M372F3280CJ4 32M X 72 DRAM Dimm With Ecc Using 16Mx4, 4K & 8K Refresh, 3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1633. K4E660412C-T Samsung - M372F3280CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1634. K4E660412D Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1635. K4E660412D-J Samsung - M372F3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1636. K4E660412D-JC/L Samsung - M372F3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1637. K4E660412D-T Samsung - M372F3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1638. K4E660412D-TC/L Samsung - M372F3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1639. K4E660412E Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1640. K4E660412E-JI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1641. K4E660412E-JI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1642. K4E660412E-JI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1643. K4E660412E-JP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1644. K4E660412E-JP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1645. K4E660412E-JP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1646. K4E660412E-T Samsung - M372F3280ET1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K ; Speed(ns) = C50,C60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+EEPROM ; Production Status = Eol ; Comments = -
  1647. K4E660412E-TI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1648. K4E660412E-TI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1649. K4E660412E-TI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1650. K4E660412E-TP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1651. K4E660412E-TP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1652. K4E660412E-TP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1653. K4E660811B Samsung - K4E660811B 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1654. K4E660811C Samsung - K4E660811C 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ-400A,32TSOP2-400B ; Power = Normal ; Production Status = Eol ; Comments = -
  1655. K4E660811D Samsung - K4E660811D 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1656. K4E660812B Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1657. K4E660812C Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1658. K4E660812D Samsung - K4E660812D ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1659. K4E660812E Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1660. K4E661611B Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1661. K4E661611B-45 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1662. K4E661611B-50 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1663. K4E661611B-60 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1664. K4E661611C Samsung - K4E661611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1665. K4E661611D Samsung - K4E661611D 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1666. K4E661611D-TC60 Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1667. K4E661612B Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1668. K4E661612B-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1669. K4E661612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1670. K4E661612C Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1671. K4E661612C-45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1672. K4E661612C-50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1673. K4E661612C-60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1674. K4E661612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1675. K4E661612C-L45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1676. K4E661612C-L50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1677. K4E661612C-L60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1678. K4E661612C-T Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1679. K4E661612C-T45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1680. K4E661612C-T50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1681. K4E661612C-T60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1682. K4E661612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1683. K4E661612C-TC45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1684. K4E661612C-TC50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1685. K4E661612C-TC60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1686. K4E661612C-TL45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1687. K4E661612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1688. K4E661612C-TL60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1689. K4E661612D Samsung - CMOS DRAM
  1690. K4E661612D-T Samsung - M366F0484DT1 4MBx64 DRAM Dimm Using 4MBx16,4KB&8KB Refresh 3.3V,EDO Mode Without Buffer ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50, 60 ; #of Pin = 168 ; Component Composition = (4Mx16)*4+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1691. K4E661612E Samsung - K4E661612E 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1692. K4F151611 Samsung - 1m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1693. K4F151611C Samsung - K4F171611C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1694. K4F151611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1695. K4F151611D-50 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1696. K4F151611D-60 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1697. K4F151611D-J Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1698. K4F151611D-T Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1699. K4F151612C Samsung - K4F151612C 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1700. K4F151612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1701. K4F151612D-50 Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1702. K4F151612D-60 Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1703. K4F151612D-J Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1704. K4F151612D-T Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1705. K4F160411C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1706. K4F160411C-B Samsung - 4m X 4bit Cmos Dynamic Ram With Fast Page Mode
  1707. K4F160411C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1708. K4F160411D Samsung - 4m X 4bit Cmos Dynamic Ram With Fast Page Mode
  1709. K4F160411D-B Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1710. K4F160411D-F Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1711. K4F160412C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1712. K4F160412C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1713. K4F160412C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1714. K4F160412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1715. K4F160412D-B Samsung - K4F160412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1716. K4F160412D-F Samsung - K4F160412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1717. K4F160811C Samsung - K4F170811C 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1718. K4F160811D Samsung - 2m X 8bit Cmos Dynamic Ram With Fast Page Mode
  1719. K4F160811D-B Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1720. K4F160811D-F Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1721. K4F160812C Samsung - K4F170812C 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1722. K4F160812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  1723. K4F160812D-B Samsung - K4F160812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1724. K4F160812D-F Samsung - K4F160812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1725. K4F170111C Samsung - K4F170111C 16Mx1Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx1 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1726. K4F170112C Samsung - K4F170112C 16Mx1Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx1 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1727. K4F170411C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1728. K4F170411C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1729. K4F170411C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1730. K4F170411D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1731. K4F170411D-B Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1732. K4F170411D-F Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1733. K4F170412C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1734. K4F170412C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1735. K4F170412C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1736. K4F170412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1737. K4F170412D-B Samsung - K4F170412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1738. K4F170412D-F Samsung - K4F170412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1739. K4F170811C Samsung - K4F170811C 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1740. K4F170811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  1741. K4F170811D-B Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1742. K4F170811D-F Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1743. K4F170812C Samsung - K4F170812C 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1744. K4F170812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  1745. K4F170812D-B Samsung - K4F170812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1746. K4F170812D-F Samsung - K4F170812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1747. K4F171611C Samsung - K4F171611C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1748. K4F171611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1749. K4F171611D-50 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1750. K4F171611D-60 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1751. K4F171611D-J Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1752. K4F171611D-T Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1753. K4F171612C Samsung - K4F171612C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1754. K4F171612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1755. K4F171612D-50 Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1756. K4F171612D-60 Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1757. K4F171612D-J Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1758. K4F171612D-T Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1759. K4F640411B Samsung - K4F640411B 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1760. K4F640411C Samsung - K4F640411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1761. K4F640411D Samsung - K4F640411D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1762. K4F640412B Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1763. K4F640412C Samsung - K4F640412C 16M X4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1764. K4F640412D Samsung - 16m X 4bit Cmos Dynamic Ram With Fast Page Mode
  1765. K4F640412D-JC/L Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1766. K4F640412D-TC/L Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1767. K4F640412E Samsung - K4F640412E 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1768. K4F640811B Samsung - 8m X 8bit Cmos Dynamic Ram With Fast Page Mode
  1769. K4F640811C Samsung - K4F640412C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1770. K4F640811D Samsung - K4F640811D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1771. K4F640812B Samsung - K4F640812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1772. K4F640812C Samsung - K4F640812C 8M X8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50, 60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Until Aug. 2000
  1773. K4F640812D Samsung - 8m X 8bit Cmos Dynamic Ram With Fast Page Mode
  1774. K4F640812D-JC/L Samsung - K4F640812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1775. K4F640812D-TC/L Samsung - K4F640812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1776. K4F641611B Samsung - K4F641611B 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1777. K4F641611C Samsung - K4F641611C 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1778. K4F641611D Samsung - K4F641611D 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1779. K4F641612B Samsung - K4F641612B 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1780. K4F641612C Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1781. K4F641612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1782. K4F641612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1783. K4F641612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1784. K4F641612D Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1785. K4F641612D-TI Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1786. K4F641612D-TP Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1787. K4F641612E Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1788. K4F660411B Samsung - M372C3280BJ0 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1789. K4F660411C Samsung - K4F660411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1790. K4F660411D Samsung - K4F660411D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1791. K4F660412B Samsung - K4F660412B 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1792. K4F660412B-J Samsung - M372V3280CJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1793. K4F660412C Samsung - K4F660412C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = ,
  1794. K4F660412C-J Samsung - M372V3280CJ3 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1795. K4F660412C-T Samsung - M372V3280CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1796. K4F660412D Samsung - 16M x 4bit CMOS Dynamic RAM with Fast Page Mode
  1797. K4F660412D-J Samsung - M372V3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1798. K4F660412D-JC/L Samsung - M372V3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1799. K4F660412D-T Samsung - M372V3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1800. K4F660412D-TC/L Samsung - M372V3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1801. K4F660412E Samsung - K4F660412E 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1802. K4F660811B Samsung - 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
  1803. K4F660811C Samsung - K4F660811C 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1804. K4F660811D Samsung - K4F660811D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1805. K4F660812B Samsung - K4F660812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1806. K4F660812C Samsung - K4F660812C 8M X8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1807. K4F660812D Samsung - 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
  1808. K4F660812D-JC/L Samsung - K4F660812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1809. K4F660812D-TC/L Samsung - K4F660812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1810. K4F660812E Samsung - K4F660812E 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1811. K4F661611B Samsung - M364C0884BT0 Fast Page Mode:8Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x8+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1812. K4F661611C Samsung - K4F661611C 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1813. K4F661611D Samsung - K4F661611D 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1814. K4F661612B Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1815. K4F661612B-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1816. K4F661612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1817. K4F661612C Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1818. K4F661612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1819. K4F661612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1820. K4F661612D Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1821. K4F661612D-TI Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1822. K4F661612D-TP Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1823. K4F661612E Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1824. K4G163222A Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1825. K4G163222A-PC/L50 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1826. K4G163222A-PC/L55 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1827. K4G163222A-PC/L60 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1828. K4G163222A-PC/L70 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1829. K4G163222A-PC/L80 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1830. K4G163222A-QC/L50 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1831. K4G163222A-QC/L55 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1832. K4G163222A-QC/L60 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1833. K4G163222A-QC/L70 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1834. K4G163222A-QC/L80 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1835. K4G323222A Samsung - 32mbit Sgram
  1836. K4G323222A-PC/L45 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1837. K4G323222A-PC/L50 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1838. K4G323222A-PC/L60 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1839. K4G323222A-PC/L70 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1840. K4G323222A-PC/L7C Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1841. K4G323222A-QC/L45 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1842. K4G323222A-QC/L50 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1843. K4G323222A-QC/L60 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1844. K4G323222A-QC/L70 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1845. K4G323222A-QC/L7C Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1846. K4G323222M Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1847. K4G323222M-PC/L45 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1848. K4G323222M-PC/L50 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1849. K4G323222M-PC/L55 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1850. K4G323222M-PC/L60 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1851. K4G323222M-PC/L70 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1852. K4G323222M-PC/L7C Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1853. K4G323222M-PC/L80 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1854. K4G323222M-QC/L45 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1855. K4G323222M-QC/L50 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1856. K4G323222M-QC/L55 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1857. K4G323222M-QC/L60 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1858. K4G323222M-QC/L70 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1859. K4G323222M-QC/L7C Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1860. K4G323222M-QC/L80 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1861. K4G813222B Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1862. K4G813222B-PC10 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1863. K4G813222B-PC70 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1864. K4G813222B-PC80 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1865. K4G813222B-QC10 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1866. K4G813222B-QC70 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1867. K4G813222B-QC80 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1868. K4H1G0438A Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  1869. K4H1G0438A-TCA0 Samsung - 128Mb DDR SDRAM
  1870. K4H1G0438A-TCA2 Samsung - 128Mb DDR SDRAM
  1871. K4H1G0438A-TCB0 Samsung - 128Mb DDR SDRAM
  1872. K4H1G0438A-TLA0 Samsung - 128Mb DDR SDRAM
  1873. K4H1G0438A-TLA2 Samsung - 128Mb DDR SDRAM
  1874. K4H1G0438A-TLB0 Samsung - 128Mb DDR SDRAM
  1875. K4H1G0438A-UC/LCC,B3,A2,B0 Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  1876. K4H1G0438B-TCA0 Samsung - 128Mb DDR SDRAM
  1877. K4H1G0438B-TCA2 Samsung - 128Mb DDR SDRAM
  1878. K4H1G0438B-TCB0 Samsung - 128Mb DDR SDRAM
  1879. K4H1G0438B-TLA0 Samsung - 128Mb DDR SDRAM
  1880. K4H1G0438B-TLA2 Samsung - 128Mb DDR SDRAM
  1881. K4H1G0438B-TLB0 Samsung - 128Mb DDR SDRAM
  1882. K4H1G0438C-TCA0 Samsung - 128Mb DDR SDRAM
  1883. K4H1G0438C-TCA2 Samsung - 128Mb DDR SDRAM
  1884. K4H1G0438C-TCB0 Samsung - 128Mb DDR SDRAM
  1885. K4H1G0438C-TLA0 Samsung - 128Mb DDR SDRAM
  1886. K4H1G0438C-TLA2 Samsung - 128Mb DDR SDRAM
  1887. K4H1G0438C-TLB0 Samsung - 128Mb DDR SDRAM
  1888. K4H1G0438D-TCA0 Samsung - 128Mb DDR SDRAM
  1889. K4H1G0438D-TCA2 Samsung - 128Mb DDR SDRAM
  1890. K4H1G0438D-TCB0 Samsung - 128Mb DDR SDRAM
  1891. K4H1G0438D-TLA0 Samsung - 128Mb DDR SDRAM
  1892. K4H1G0438D-TLA2 Samsung - 128Mb DDR SDRAM
  1893. K4H1G0438D-TLB0 Samsung - 128Mb DDR SDRAM
  1894. K4H1G0438E-TCA0 Samsung - 128Mb DDR SDRAM
  1895. K4H1G0438E-TCA2 Samsung - 128Mb DDR SDRAM
  1896. K4H1G0438E-TCB0 Samsung - 128Mb DDR SDRAM
  1897. K4H1G0438E-TLA0 Samsung - 128Mb DDR SDRAM
  1898. K4H1G0438E-TLA2 Samsung - 128Mb DDR SDRAM
  1899. K4H1G0438E-TLB0 Samsung - 128Mb DDR SDRAM
  1900. K4H1G0438M Samsung - 1gb M-die Ddr Sdram Specification
  1901. K4H1G0438M-LA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1902. K4H1G0438M-LB0 Samsung - 1gb M-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  1903. K4H1G0438M-LB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1904. K4H1G0438M-TC(L)/B3,A2,B0 Samsung - st. 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  1905. K4H1G0438M-TCA0 Samsung - 128Mb DDR SDRAM
  1906. K4H1G0438M-TCA2 Samsung - 128Mb DDR SDRAM
  1907. K4H1G0438M-TCB0 Samsung - 128Mb DDR SDRAM
  1908. K4H1G0438M-TLA0 Samsung - 128Mb DDR SDRAM
  1909. K4H1G0438M-TLA2 Samsung - 128Mb DDR SDRAM
  1910. K4H1G0438M-TLB0 Samsung - 128Mb DDR SDRAM
  1911. K4H1G0438M-UC Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1912. K4H1G0438M-UC0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1913. K4H1G0438M-UC2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1914. K4H1G0438M-UC3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1915. K4H1G0438M-UCA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1916. K4H1G0438M-UCB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1917. K4H1G0438M-UCB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1918. K4H1G0438M-ULA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1919. K4H1G0438M-ULB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1920. K4H1G0438M-ULB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1921. K4H1G0638B Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1922. K4H1G0638B-T(U)C/LA2 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1923. K4H1G0638B-T(U)C/LB0 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1924. K4H1G0638B-TC/LA2 Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1925. K4H1G0638B-TC/LAA Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1926. K4H1G0638B-TC/LB0 Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1927. K4H1G0638C Samsung - Stacked 1gb C-die Ddr Sdram Specification
  1928. K4H1G0638C-UC/LA2,B0 Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0638C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1929. K4H1G0738B Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1930. K4H1G0738B-T(U)C/LA2 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1931. K4H1G0738B-T(U)C/LB0 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1932. K4H1G0738B-TC/LA2 Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1933. K4H1G0738B-TC/LAA Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1934. K4H1G0738B-TC/LB0 Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1935. K4H1G0738C Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1936. K4H1G0738C-UC/LA2,B0 Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0638C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1937. K4H1G0838A Samsung - 32M x 8Bit x 4 Banks Double Data Rate SDRAMhe K4H1G0838A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  1938. K4H1G0838A-TCA0 Samsung - 128Mb DDR SDRAM
  1939. K4H1G0838A-TCA2 Samsung - 128Mb DDR SDRAM
  1940. K4H1G0838A-TCB0 Samsung - 128Mb DDR SDRAM
  1941. K4H1G0838A-TLA0 Samsung - 128Mb DDR SDRAM
  1942. K4H1G0838A-TLA2 Samsung - 128Mb DDR SDRAM
  1943. K4H1G0838A-TLB0 Samsung - 128Mb DDR SDRAM
  1944. K4H1G0838A-UC/LCC,B3,A2,B0 Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  1945. K4H1G0838B-TCA0 Samsung - 128Mb DDR SDRAM
  1946. K4H1G0838B-TCA2 Samsung - 128Mb DDR SDRAM
  1947. K4H1G0838B-TCB0 Samsung - 128Mb DDR SDRAM
  1948. K4H1G0838B-TLA0 Samsung - 128Mb DDR SDRAM
  1949. K4H1G0838B-TLA2 Samsung - 128Mb DDR SDRAM
  1950. K4H1G0838B-TLB0 Samsung - 128Mb DDR SDRAM
  1951. K4H1G0838C-TCA0 Samsung - 128Mb DDR SDRAM
  1952. K4H1G0838C-TCA2 Samsung - 128Mb DDR SDRAM
  1953. K4H1G0838C-TCB0 Samsung - 128Mb DDR SDRAM
  1954. K4H1G0838C-TLA0 Samsung - 128Mb DDR SDRAM
  1955. K4H1G0838C-TLA2 Samsung - 128Mb DDR SDRAM
  1956. K4H1G0838C-TLB0 Samsung - 128Mb DDR SDRAM
  1957. K4H1G0838D-TCA0 Samsung - 128Mb DDR SDRAM
  1958. K4H1G0838D-TCA2 Samsung - 128Mb DDR SDRAM
  1959. K4H1G0838D-TCB0 Samsung - 128Mb DDR SDRAM
  1960. K4H1G0838D-TLA0 Samsung - 128Mb DDR SDRAM
  1961. K4H1G0838D-TLA2 Samsung - 128Mb DDR SDRAM
  1962. K4H1G0838D-TLB0 Samsung - 128Mb DDR SDRAM
  1963. K4H1G0838E-TCA0 Samsung - 128Mb DDR SDRAM
  1964. K4H1G0838E-TCA2 Samsung - 128Mb DDR SDRAM
  1965. K4H1G0838E-TCB0 Samsung - 128Mb DDR SDRAM
  1966. K4H1G0838E-TLA0 Samsung - 128Mb DDR SDRAM
  1967. K4H1G0838E-TLA2 Samsung - 128Mb DDR SDRAM
  1968. K4H1G0838E-TLB0 Samsung - 128Mb DDR SDRAM
  1969. K4H1G0838M Samsung - 32M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0838M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  1970. K4H1G0838M-LA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1971. K4H1G0838M-LB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1972. K4H1G0838M-LB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1973. K4H1G0838M-TCA0 Samsung - 128Mb DDR SDRAM
  1974. K4H1G0838M-TCA2 Samsung - 128Mb DDR SDRAM
  1975. K4H1G0838M-TCB0 Samsung - 128Mb DDR SDRAM
  1976. K4H1G0838M-TLA0 Samsung - 128Mb DDR SDRAM
  1977. K4H1G0838M-TLA2 Samsung - 128Mb DDR SDRAM
  1978. K4H1G0838M-TLB0 Samsung - 128Mb DDR SDRAM
  1979. K4H1G0838M-UC(L)/B3,A2,B0 Samsung - st. 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  1980. K4H1G0838M-UC0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1981. K4H1G0838M-UC2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1982. K4H1G0838M-UC3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1983. K4H1G0838M-UCA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1984. K4H1G0838M-UCB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1985. K4H1G0838M-UCB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1986. K4H1G0838M-ULA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1987. K4H1G0838M-ULB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1988. K4H1G0838M-ULB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1989. K4H1G1638A-TCA0 Samsung - 128Mb DDR SDRAM
  1990. K4H1G1638A-TCA2 Samsung - 128Mb DDR SDRAM
  1991. K4H1G1638A-TCB0 Samsung - 128Mb DDR SDRAM
  1992. K4H1G1638A-TLA0 Samsung - 128Mb DDR SDRAM
  1993. K4H1G1638A-TLA2 Samsung - 128Mb DDR SDRAM
  1994. K4H1G1638A-TLB0 Samsung - 128Mb DDR SDRAM
  1995. K4H1G1638B-TCA0 Samsung - 128Mb DDR SDRAM
  1996. K4H1G1638B-TCA2 Samsung - 128Mb DDR SDRAM
  1997. K4H1G1638B-TCB0 Samsung - 128Mb DDR SDRAM
  1998. K4H1G1638B-TLA0 Samsung - 128Mb DDR SDRAM
  1999. K4H1G1638B-TLA2 Samsung - 128Mb DDR SDRAM
  2000. K4H1G1638B-TLB0 Samsung - 128Mb DDR SDRAM
  2001. K4H1G1638C-TCA0 Samsung - 128Mb DDR SDRAM
  2002. K4H1G1638C-TCA2 Samsung - 128Mb DDR SDRAM
  2003. K4H1G1638C-TCB0 Samsung - 128Mb DDR SDRAM
  2004. K4H1G1638C-TLA0 Samsung - 128Mb DDR SDRAM
  2005. K4H1G1638C-TLA2 Samsung - 128Mb DDR SDRAM
  2006. K4H1G1638C-TLB0 Samsung - 128Mb DDR SDRAM
  2007. K4H1G1638D-TCA0 Samsung - 128Mb DDR SDRAM
  2008. K4H1G1638D-TCA2 Samsung - 128Mb DDR SDRAM
  2009. K4H1G1638D-TCB0 Samsung - 128Mb DDR SDRAM
  2010. K4H1G1638D-TLA0 Samsung - 128Mb DDR SDRAM
  2011. K4H1G1638D-TLA2 Samsung - 128Mb DDR SDRAM
  2012. K4H1G1638D-TLB0 Samsung - 128Mb DDR SDRAM
  2013. K4H1G1638E-TCA0 Samsung - 128Mb DDR SDRAM
  2014. K4H1G1638E-TCA2 Samsung - 128Mb DDR SDRAM
  2015. K4H1G1638E-TCB0 Samsung - 128Mb DDR SDRAM
  2016. K4H1G1638E-TLA0 Samsung - 128Mb DDR SDRAM
  2017. K4H1G1638E-TLA2 Samsung - 128Mb DDR SDRAM
  2018. K4H1G1638E-TLB0 Samsung - 128Mb DDR SDRAM
  2019. K4H1G1638M-TCA0 Samsung - 128Mb DDR SDRAM
  2020. K4H1G1638M-TCA2 Samsung - 128Mb DDR SDRAM
  2021. K4H1G1638M-TCB0 Samsung - 128Mb DDR SDRAM
  2022. K4H1G1638M-TLA0 Samsung - 128Mb DDR SDRAM
  2023. K4H1G1638M-TLA2 Samsung - 128Mb DDR SDRAM
  2024. K4H1G1638M-TLB0 Samsung - 128Mb DDR SDRAM
  2025. K4H1G3238A-TCA0 Samsung - 128Mb DDR SDRAM
  2026. K4H1G3238A-TCA2 Samsung - 128Mb DDR SDRAM
  2027. K4H1G3238A-TCB0 Samsung - 128Mb DDR SDRAM
  2028. K4H1G3238A-TLA0 Samsung - 128Mb DDR SDRAM
  2029. K4H1G3238A-TLA2 Samsung - 128Mb DDR SDRAM
  2030. K4H1G3238A-TLB0 Samsung - 128Mb DDR SDRAM
  2031. K4H1G3238B-TCA0 Samsung - 128Mb DDR SDRAM
  2032. K4H1G3238B-TCA2 Samsung - 128Mb DDR SDRAM
  2033. K4H1G3238B-TCB0 Samsung - 128Mb DDR SDRAM
  2034. K4H1G3238B-TLA0 Samsung - 128Mb DDR SDRAM
  2035. K4H1G3238B-TLA2 Samsung - 128Mb DDR SDRAM
  2036. K4H1G3238B-TLB0 Samsung - 128Mb DDR SDRAM
  2037. K4H1G3238C-TCA0 Samsung - 128Mb DDR SDRAM
  2038. K4H1G3238C-TCA2 Samsung - 128Mb DDR SDRAM
  2039. K4H1G3238C-TCB0 Samsung - 128Mb DDR SDRAM
  2040. K4H1G3238C-TLA0 Samsung - 128Mb DDR SDRAM
  2041. K4H1G3238C-TLA2 Samsung - 128Mb DDR SDRAM
  2042. K4H1G3238C-TLB0 Samsung - 128Mb DDR SDRAM
  2043. K4H1G3238D-TCA0 Samsung - 128Mb DDR SDRAM
  2044. K4H1G3238D-TCA2 Samsung - 128Mb DDR SDRAM
  2045. K4H1G3238D-TCB0 Samsung - 128Mb DDR SDRAM
  2046. K4H1G3238D-TLA0 Samsung - 128Mb DDR SDRAM
  2047. K4H1G3238D-TLA2 Samsung - 128Mb DDR SDRAM
  2048. K4H1G3238D-TLB0 Samsung - 128Mb DDR SDRAM
  2049. K4H1G3238E-TCA0 Samsung - 128Mb DDR SDRAM
  2050. K4H1G3238E-TCA2 Samsung - 128Mb DDR SDRAM
  2051. K4H1G3238E-TCB0 Samsung - 128Mb DDR SDRAM
  2052. K4H1G3238E-TLA0 Samsung - 128Mb DDR SDRAM
  2053. K4H1G3238E-TLA2 Samsung - 128Mb DDR SDRAM
  2054. K4H1G3238E-TLB0 Samsung - 128Mb DDR SDRAM
  2055. K4H1G3238M-TCA0 Samsung - 128Mb DDR SDRAM
  2056. K4H1G3238M-TCA2 Samsung - 128Mb DDR SDRAM
  2057. K4H1G3238M-TCB0 Samsung - 128Mb DDR SDRAM
  2058. K4H1G3238M-TLA0 Samsung - 128Mb DDR SDRAM
  2059. K4H1G3238M-TLA2 Samsung - 128Mb DDR SDRAM
  2060. K4H1G3238M-TLB0 Samsung - 128Mb DDR SDRAM
  2061. K4H280438A-TCA0 Samsung - 128Mb DDR SDRAM
  2062. K4H280438A-TCA2 Samsung - 128Mb DDR SDRAM
  2063. K4H280438A-TCB0 Samsung - 128Mb DDR SDRAM
  2064. K4H280438A-TLA0 Samsung - 128Mb DDR SDRAM
  2065. K4H280438A-TLA2 Samsung - 128Mb DDR SDRAM
  2066. K4H280438A-TLB0 Samsung - 128Mb DDR SDRAM
  2067. K4H280438B Samsung - K4H280438B 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2068. K4H280438B-TCA0 Samsung - 128Mb DDR SDRAM
  2069. K4H280438B-TCA2 Samsung - 128Mb DDR SDRAM
  2070. K4H280438B-TCB0 Samsung - 128Mb DDR SDRAM
  2071. K4H280438B-TLA0 Samsung - 128Mb DDR SDRAM
  2072. K4H280438B-TLA2 Samsung - 128Mb DDR SDRAM
  2073. K4H280438B-TLB0 Samsung - 128Mb DDR SDRAM
  2074. K4H280438C Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2075. K4H280438C-TCA0 Samsung - 128Mb DDR SDRAM
  2076. K4H280438C-TCA2 Samsung - 128Mb DDR SDRAM
  2077. K4H280438C-TCB0 Samsung - 128Mb DDR SDRAM
  2078. K4H280438C-TCB3 Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2079. K4H280438C-TLA0 Samsung - 128Mb DDR SDRAM
  2080. K4H280438C-TLA2 Samsung - 128Mb DDR SDRAM
  2081. K4H280438C-TLB0 Samsung - 128Mb DDR SDRAM
  2082. K4H280438C-TLB3 Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2083. K4H280438D Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2084. K4H280438D-TCA0 Samsung - 128Mb DDR SDRAM
  2085. K4H280438D-TCA2 Samsung - 128Mb DDR SDRAM
  2086. K4H280438D-TCB0 Samsung - 128Mb DDR SDRAM
  2087. K4H280438D-TCB3 Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2088. K4H280438D-TLA0 Samsung - 128Mb DDR SDRAM
  2089. K4H280438D-TLA2 Samsung - 128Mb DDR SDRAM
  2090. K4H280438D-TLB0 Samsung - 128Mb DDR SDRAM
  2091. K4H280438D-TLB3 Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2092. K4H280438E Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2093. K4H280438E-TCA0 Samsung - 128Mb DDR SDRAM
  2094. K4H280438E-TCA2 Samsung - 128Mb DDR SDRAM
  2095. K4H280438E-TCB0 Samsung - 128Mb DDR SDRAM
  2096. K4H280438E-TC/LA2 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2097. K4H280438E-TC/LAA Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2098. K4H280438E-TC/LB0 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2099. K4H280438E-TC/LB3 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2100. K4H280438E-TLA0 Samsung - 128Mb DDR SDRAM
  2101. K4H280438E-TLA2 Samsung - 128Mb DDR SDRAM
  2102. K4H280438E-TLB0 Samsung - 128Mb DDR SDRAM
  2103. K4H280438F Samsung - 128mb F-die Ddr Sdram Specification
  2104. K4H280438F-UC Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2105. K4H280438F-UCA0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2106. K4H280438F-UCA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2107. K4H280438F-UCB0 Samsung - 128mb F-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2108. K4H280438F-ULA0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2109. K4H280438F-ULA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2110. K4H280438F-ULB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2111. K4H280438M-TCA0 Samsung - 128Mb DDR SDRAM
  2112. K4H280438M-TCA2 Samsung - 128Mb DDR SDRAM
  2113. K4H280438M-TCB0 Samsung - 128Mb DDR SDRAM
  2114. K4H280438M-TLA0 Samsung - 128Mb DDR SDRAM
  2115. K4H280438M-TLA2 Samsung - 128Mb DDR SDRAM
  2116. K4H280438M-TLB0 Samsung - 128Mb DDR SDRAM
  2117. K4H280838A-TCA0 Samsung - 128Mb DDR SDRAM
  2118. K4H280838A-TCA2 Samsung - 128Mb DDR SDRAM
  2119. K4H280838A-TCB0 Samsung - 128Mb DDR SDRAM
  2120. K4H280838A-TLA0 Samsung - 128Mb DDR SDRAM
  2121. K4H280838A-TLA2 Samsung - 128Mb DDR SDRAM
  2122. K4H280838A-TLB0 Samsung - 128Mb DDR SDRAM
  2123. K4H280838B Samsung - K4H280838B 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2124. K4H280838B-TCA0 Samsung - 128Mb DDR SDRAM
  2125. K4H280838B-TCA2 Samsung - 128Mb DDR SDRAM
  2126. K4H280838B-TCB0 Samsung - 128Mb DDR SDRAM
  2127. K4H280838B-TLA0 Samsung - 128Mb DDR SDRAM
  2128. K4H280838B-TLA2 Samsung - 128Mb DDR SDRAM
  2129. K4H280838B-TLB0 Samsung - 128Mb DDR SDRAM
  2130. K4H280838C Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2131. K4H280838C-TCA0 Samsung - 128Mb DDR SDRAM
  2132. K4H280838C-TCA2 Samsung - 128Mb DDR SDRAM
  2133. K4H280838C-TCB0 Samsung - 128Mb DDR SDRAM
  2134. K4H280838C-TCB3 Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2135. K4H280838C-TLA0 Samsung - 128Mb DDR SDRAM
  2136. K4H280838C-TLA2 Samsung - 128Mb DDR SDRAM
  2137. K4H280838C-TLB0 Samsung - 128Mb DDR SDRAM
  2138. K4H280838C-TLB3 Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2139. K4H280838D Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2140. K4H280838D-TCA0 Samsung - 128Mb DDR SDRAM
  2141. K4H280838D-TCA2 Samsung - 128Mb DDR SDRAM
  2142. K4H280838D-TCB0 Samsung - 128Mb DDR SDRAM
  2143. K4H280838D-TCB3 Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2144. K4H280838D-TLA0 Samsung - 128Mb DDR SDRAM
  2145. K4H280838D-TLA2 Samsung - 128Mb DDR SDRAM
  2146. K4H280838D-TLB0 Samsung - 128Mb DDR SDRAM
  2147. K4H280838D-TLB3 Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2148. K4H280838E Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2149. K4H280838E-TCA0 Samsung - 128Mb DDR SDRAM
  2150. K4H280838E-TCA2 Samsung - 128Mb DDR SDRAM
  2151. K4H280838E-TCB0 Samsung - 128Mb DDR SDRAM
  2152. K4H280838E-TC/LA2 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2153. K4H280838E-TC/LAA Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2154. K4H280838E-TC/LB0 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2155. K4H280838E-TC/LB3 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2156. K4H280838E-TLA0 Samsung - 128Mb DDR SDRAM
  2157. K4H280838E-TLA2 Samsung - 128Mb DDR SDRAM
  2158. K4H280838E-TLB0 Samsung - 128Mb DDR SDRAM
  2159. K4H280838F Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  2160. K4H280838F-TC/LB3 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  2161. K4H280838F-UCA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2162. K4H280838F-UCB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2163. K4H280838F-UCB3 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2164. K4H280838F-UC/LA2 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  2165. K4H280838F-UC/LB0 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  2166. K4H280838F-ULA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2167. K4H280838F-ULB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2168. K4H280838F-ULB3 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2169. K4H280838M-TCA0 Samsung - 128Mb DDR SDRAM
  2170. K4H280838M-TCA2 Samsung - 128Mb DDR SDRAM
  2171. K4H280838M-TCB0 Samsung - 128Mb DDR SDRAM
  2172. K4H280838M-TLA0 Samsung - 128Mb DDR SDRAM
  2173. K4H280838M-TLA2 Samsung - 128Mb DDR SDRAM
  2174. K4H280838M-TLB0 Samsung - 128Mb DDR SDRAM
  2175. K4H281638A-TCA0 Samsung - 128Mb DDR SDRAM
  2176. K4H281638A-TCA2 Samsung - 128Mb DDR SDRAM
  2177. K4H281638A-TCB0 Samsung - 128Mb DDR SDRAM
  2178. K4H281638A-TLA0 Samsung - 128Mb DDR SDRAM
  2179. K4H281638A-TLA2 Samsung - 128Mb DDR SDRAM
  2180. K4H281638A-TLB0 Samsung - 128Mb DDR SDRAM
  2181. K4H281638B Samsung - K4H281638B 128Mb DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2182. K4H281638B-TCA0 Samsung - 128Mb DDR SDRAM
  2183. K4H281638B-TCA2 Samsung - 128Mb DDR SDRAM
  2184. K4H281638B-TCB0 Samsung - 128Mb DDR SDRAM
  2185. K4H281638B-TLA0 Samsung - 128Mb DDR SDRAM
  2186. K4H281638B-TLA2 Samsung - 128Mb DDR SDRAM
  2187. K4H281638B-TLB0 Samsung - 128Mb DDR SDRAM
  2188. K4H281638C-TCA0 Samsung - 128Mb DDR SDRAM
  2189. K4H281638C-TCA2 Samsung - 128Mb DDR SDRAM
  2190. K4H281638C-TCB0 Samsung - 128Mb DDR SDRAM
  2191. K4H281638C-TLA0 Samsung - 128Mb DDR SDRAM
  2192. K4H281638C-TLA2 Samsung - 128Mb DDR SDRAM
  2193. K4H281638C-TLB0 Samsung - 128Mb DDR SDRAM
  2194. K4H281638D Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  2195. K4H281638D-TCA0 Samsung - 128Mb DDR SDRAM
  2196. K4H281638D-TCA2 Samsung - 128Mb DDR SDRAM
  2197. K4H281638D-TCB0 Samsung - 128Mb DDR SDRAM
  2198. K4H281638D-TCB3 Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  2199. K4H281638D-TLA0 Samsung - 128Mb DDR SDRAM
  2200. K4H281638D-TLA2 Samsung - 128Mb DDR SDRAM
  2201. K4H281638D-TLB0 Samsung - 128Mb DDR SDRAM
  2202. K4H281638D-TLB3 Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  2203. K4H281638E Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2204. K4H281638E-TCA0 Samsung - 128Mb DDR SDRAM
  2205. K4H281638E-TCA2 Samsung - 128Mb DDR SDRAM
  2206. K4H281638E-TCB0 Samsung - 128Mb DDR SDRAM
  2207. K4H281638E-TC/LA2 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2208. K4H281638E-TC/LB0 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2209. K4H281638E-TC/LB3 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2210. K4H281638E-TLA0 Samsung - 128Mb DDR SDRAM
  2211. K4H281638E-TLA2 Samsung - 128Mb DDR SDRAM
  2212. K4H281638E-TLB0 Samsung - 128Mb DDR SDRAM
  2213. K4H281638M-TCA0 Samsung - 128Mb DDR SDRAM
  2214. K4H281638M-TCA2 Samsung - 128Mb DDR SDRAM
  2215. K4H281638M-TCB0 Samsung - 128Mb DDR SDRAM
  2216. K4H281638M-TLA0 Samsung - 128Mb DDR SDRAM
  2217. K4H281638M-TLA2 Samsung - 128Mb DDR SDRAM
  2218. K4H281638M-TLB0 Samsung - 128Mb DDR SDRAM
  2219. K4H283238A-TCA0 Samsung - 128Mb DDR SDRAM
  2220. K4H283238A-TCA2 Samsung - 128Mb DDR SDRAM
  2221. K4H283238A-TCB0 Samsung - 128Mb DDR SDRAM
  2222. K4H283238A-TLA0 Samsung - 128Mb DDR SDRAM
  2223. K4H283238A-TLA2 Samsung - 128Mb DDR SDRAM
  2224. K4H283238A-TLB0 Samsung - 128Mb DDR SDRAM
  2225. K4H283238B-TCA0 Samsung - 128Mb DDR SDRAM
  2226. K4H283238B-TCA2 Samsung - 128Mb DDR SDRAM
  2227. K4H283238B-TCB0 Samsung - 128Mb DDR SDRAM
  2228. K4H283238B-TLA0 Samsung - 128Mb DDR SDRAM
  2229. K4H283238B-TLA2 Samsung - 128Mb DDR SDRAM
  2230. K4H283238B-TLB0 Samsung - 128Mb DDR SDRAM
  2231. K4H283238C-TCA0 Samsung - 128Mb DDR SDRAM
  2232. K4H283238C-TCA2 Samsung - 128Mb DDR SDRAM
  2233. K4H283238C-TCB0 Samsung - 128Mb DDR SDRAM
  2234. K4H283238C-TLA0 Samsung - 128Mb DDR SDRAM
  2235. K4H283238C-TLA2 Samsung - 128Mb DDR SDRAM
  2236. K4H283238C-TLB0 Samsung - 128Mb DDR SDRAM
  2237. K4H283238D-TCA0 Samsung - 128Mb DDR SDRAM
  2238. K4H283238D-TCA2 Samsung - 128Mb DDR SDRAM
  2239. K4H283238D-TCB0 Samsung - 128Mb DDR SDRAM
  2240. K4H283238D-TLA0 Samsung - 128Mb DDR SDRAM
  2241. K4H283238D-TLA2 Samsung - 128Mb DDR SDRAM
  2242. K4H283238D-TLB0 Samsung - 128Mb DDR SDRAM
  2243. K4H283238E-TCA0 Samsung - 128Mb DDR SDRAM
  2244. K4H283238E-TCA2 Samsung - 128Mb DDR SDRAM
  2245. K4H283238E-TCB0 Samsung - 128Mb DDR SDRAM
  2246. K4H283238E-TLA0 Samsung - 128Mb DDR SDRAM
  2247. K4H283238E-TLA2 Samsung - 128Mb DDR SDRAM
  2248. K4H283238E-TLB0 Samsung - 128Mb DDR SDRAM
  2249. K4H283238M-TCA0 Samsung - 128Mb DDR SDRAM
  2250. K4H283238M-TCA2 Samsung - 128Mb DDR SDRAM
  2251. K4H283238M-TCB0 Samsung - 128Mb DDR SDRAM
  2252. K4H283238M-TLA0 Samsung - 128Mb DDR SDRAM
  2253. K4H283238M-TLA2 Samsung - 128Mb DDR SDRAM
  2254. K4H283238M-TLB0 Samsung - 128Mb DDR SDRAM
  2255. K4H2G0638A Samsung - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2256. K4H2G0638A-UC/LCC Samsung - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2257. K4H510438 Samsung - 512mb B-die Ddr Sdram Specification
  2258. K4H510438A-TCA0 Samsung - 128Mb DDR SDRAM
  2259. K4H510438A-TCA2 Samsung - 128Mb DDR SDRAM
  2260. K4H510438A-TCB0 Samsung - 128Mb DDR SDRAM
  2261. K4H510438A-TLA0 Samsung - 128Mb DDR SDRAM
  2262. K4H510438A-TLA2 Samsung - 128Mb DDR SDRAM
  2263. K4H510438A-TLB0 Samsung - 128Mb DDR SDRAM
  2264. K4H510438B Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2265. K4H510438B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510438B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2266. K4H510438B-TCA0 Samsung - 128Mb DDR SDRAM
  2267. K4H510438B-TCA2 Samsung - 128Mb DDR SDRAM
  2268. K4H510438B-TCB0 Samsung - 128Mb DDR SDRAM
  2269. K4H510438B-TC/LA2 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2270. K4H510438B-TC/LAA Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2271. K4H510438B-TC/LB0 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2272. K4H510438B-TC/LB3 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2273. K4H510438B-TLA0 Samsung - 128Mb DDR SDRAM
  2274. K4H510438B-TLA2 Samsung - 128Mb DDR SDRAM
  2275. K4H510438B-TLB0 Samsung - 128Mb DDR SDRAM
  2276. K4H510438C Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2277. K4H510438C-LA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2278. K4H510438C-LB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2279. K4H510438C-LB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2280. K4H510438C-LCC Samsung - 512mb C-die Ddr Sdram Specification
  2281. K4H510438C-TCA0 Samsung - 128Mb DDR SDRAM
  2282. K4H510438C-TCA2 Samsung - 128Mb DDR SDRAM
  2283. K4H510438C-TCB0 Samsung - 128Mb DDR SDRAM
  2284. K4H510438C-TLA0 Samsung - 128Mb DDR SDRAM
  2285. K4H510438C-TLA2 Samsung - 128Mb DDR SDRAM
  2286. K4H510438C-TLB0 Samsung - 128Mb DDR SDRAM
  2287. K4H510438C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2288. K4H510438C-UC(L)/B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2289. K4H510438C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2290. K4H510438C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2291. K4H510438C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2292. K4H510438C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2293. K4H510438C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2294. K4H510438C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2295. K4H510438C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2296. K4H510438C-ZCCC Samsung - 512mb C-die Ddr Sdram Specification
  2297. K4H510438C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2298. K4H510438C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2299. K4H510438D-TCA0 Samsung - 128Mb DDR SDRAM
  2300. K4H510438D-TCA2 Samsung - 128Mb DDR SDRAM
  2301. K4H510438D-TCB0 Samsung - 128Mb DDR SDRAM
  2302. K4H510438D-TLA0 Samsung - 128Mb DDR SDRAM
  2303. K4H510438D-TLA2 Samsung - 128Mb DDR SDRAM
  2304. K4H510438D-TLB0 Samsung - 128Mb DDR SDRAM
  2305. K4H510438E-TCA0 Samsung - 128Mb DDR SDRAM
  2306. K4H510438E-TCA2 Samsung - 128Mb DDR SDRAM
  2307. K4H510438E-TCB0 Samsung - 128Mb DDR SDRAM
  2308. K4H510438E-TLA0 Samsung - 128Mb DDR SDRAM
  2309. K4H510438E-TLA2 Samsung - 128Mb DDR SDRAM
  2310. K4H510438E-TLB0 Samsung - 128Mb DDR SDRAM
  2311. K4H510438M Samsung - K4H510438M 512Mb DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  2312. K4H510438M-TCA0 Samsung - 128Mb DDR SDRAM
  2313. K4H510438M-TCA2 Samsung - 128Mb DDR SDRAM
  2314. K4H510438M-TCB0 Samsung - 128Mb DDR SDRAM
  2315. K4H510438M-TLA0 Samsung - 128Mb DDR SDRAM
  2316. K4H510438M-TLA2 Samsung - 128Mb DDR SDRAM
  2317. K4H510438M-TLB0 Samsung - 128Mb DDR SDRAM
  2318. K4H510638B Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2319. K4H510638B-TCA0 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2320. K4H510638B-TCA2 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2321. K4H510638B-TCB0 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2322. K4H510638C Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2323. K4H510638C-TCA0 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2324. K4H510638C-TCA2 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2325. K4H510638C-TCB0 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2326. K4H510638C-TCB3 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2327. K4H510638D Samsung - K4H510638D The Data Sheet You Have Searched is Under Preparation. ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2328. K4H510638E Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2329. K4H510638E-TC/LA2 Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2330. K4H510638E-TC/LAA Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2331. K4H510638E-TC/LB0 Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2332. K4H510738E Samsung - Stacked 512mb E-die Ddr Sdram Specification (x4/x8)
  2333. K4H510738E-TC/LA2 Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2334. K4H510738E-TC/LAA Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2335. K4H510738E-TC/LB0 Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2336. K4H510838A-TCA0 Samsung - 128Mb DDR SDRAM
  2337. K4H510838A-TCA2 Samsung - 128Mb DDR SDRAM
  2338. K4H510838A-TCB0 Samsung - 128Mb DDR SDRAM
  2339. K4H510838A-TLA0 Samsung - 128Mb DDR SDRAM
  2340. K4H510838A-TLA2 Samsung - 128Mb DDR SDRAM
  2341. K4H510838A-TLB0 Samsung - 128Mb DDR SDRAM
  2342. K4H510838B Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2343. K4H510838B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2344. K4H510838B-N Samsung - 512mb B-die Ddr Sdram Specification 54 Stsop-ii (400mil X 441mil)
  2345. K4H510838B-TCA0 Samsung - 128Mb DDR SDRAM
  2346. K4H510838B-TCA2 Samsung - 128Mb DDR SDRAM
  2347. K4H510838B-TCB0 Samsung - 128Mb DDR SDRAM
  2348. K4H510838B-TC/LA2 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2349. K4H510838B-TC/LAA Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2350. K4H510838B-TC/LB0 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2351. K4H510838B-TC/LB3 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2352. K4H510838B-TLA0 Samsung - 128Mb DDR SDRAM
  2353. K4H510838B-TLA2 Samsung - 128Mb DDR SDRAM
  2354. K4H510838B-TLB0 Samsung - 128Mb DDR SDRAM
  2355. K4H510838C Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2356. K4H510838C-KCA0 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2357. K4H510838C-KCA2 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2358. K4H510838C-KCB0 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2359. K4H510838C-KCB3 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2360. K4H510838C-TCA0 Samsung - 128Mb DDR SDRAM
  2361. K4H510838C-TCA2 Samsung - 128Mb DDR SDRAM
  2362. K4H510838C-TCB0 Samsung - 128Mb DDR SDRAM
  2363. K4H510838C-TLA0 Samsung - 128Mb DDR SDRAM
  2364. K4H510838C-TLA2 Samsung - 128Mb DDR SDRAM
  2365. K4H510838C-TLB0 Samsung - 128Mb DDR SDRAM
  2366. K4H510838C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2367. K4H510838C-UC(L)/CC,B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510838C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2368. K4H510838C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2369. K4H510838C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2370. K4H510838C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2371. K4H510838C-UCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2372. K4H510838C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2373. K4H510838C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2374. K4H510838C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2375. K4H510838C-ULCC Samsung - 512Mb C-die DDR SDRAM Specification
  2376. K4H510838C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2377. K4H510838C-ZCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2378. K4H510838C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2379. K4H510838C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2380. K4H510838D Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2381. K4H510838D-LA2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2382. K4H510838D-LB0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2383. K4H510838D-LB3 Samsung - 512mb D-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2384. K4H510838D-LCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2385. K4H510838D-TCA0 Samsung - 128Mb DDR SDRAM
  2386. K4H510838D-TCA2 Samsung - 128Mb DDR SDRAM
  2387. K4H510838D-TCB0 Samsung - 128Mb DDR SDRAM
  2388. K4H510838D-TLA0 Samsung - 128Mb DDR SDRAM
  2389. K4H510838D-TLA2 Samsung - 128Mb DDR SDRAM
  2390. K4H510838D-TLB0 Samsung - 128Mb DDR SDRAM
  2391. K4H510838D-UC0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2392. K4H510838D-UC2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2393. K4H510838D-UC3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2394. K4H510838D-UCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2395. K4H510838D-UC/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2396. K4H510838E-TCA0 Samsung - 128Mb DDR SDRAM
  2397. K4H510838E-TCA2 Samsung - 128Mb DDR SDRAM
  2398. K4H510838E-TCB0 Samsung - 128Mb DDR SDRAM
  2399. K4H510838E-TLA0 Samsung - 128Mb DDR SDRAM
  2400. K4H510838E-TLA2 Samsung - 128Mb DDR SDRAM
  2401. K4H510838E-TLB0 Samsung - 128Mb DDR SDRAM
  2402. K4H510838M Samsung - K4H510838M 512Mb DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  2403. K4H510838M-TCA0 Samsung - 128Mb DDR SDRAM
  2404. K4H510838M-TCA2 Samsung - 128Mb DDR SDRAM
  2405. K4H510838M-TCB0 Samsung - 128Mb DDR SDRAM
  2406. K4H510838M-TLA0 Samsung - 128Mb DDR SDRAM
  2407. K4H510838M-TLA2 Samsung - 128Mb DDR SDRAM
  2408. K4H510838M-TLB0 Samsung - 128Mb DDR SDRAM
  2409. K4H511638 Samsung - 512Mb C-die DDR SDRAM Specification
  2410. K4H511638A-TCA0 Samsung - 128Mb DDR SDRAM
  2411. K4H511638A-TCA2 Samsung - 128Mb DDR SDRAM
  2412. K4H511638A-TCB0 Samsung - 128Mb DDR SDRAM
  2413. K4H511638A-TLA0 Samsung - 128Mb DDR SDRAM
  2414. K4H511638A-TLA2 Samsung - 128Mb DDR SDRAM
  2415. K4H511638A-TLB0 Samsung - 128Mb DDR SDRAM
  2416. K4H511638B Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2417. K4H511638B-G Samsung - 512mb B-die Ddr Sdram Specification
  2418. K4H511638B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2419. K4H511638B-TCA0 Samsung - 128Mb DDR SDRAM
  2420. K4H511638B-TCA2 Samsung - 128Mb DDR SDRAM
  2421. K4H511638B-TCB0 Samsung - 128Mb DDR SDRAM
  2422. K4H511638B-TC/LA2 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2423. K4H511638B-TC/LB0 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2424. K4H511638B-TC/LB3 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2425. K4H511638B-TLA0 Samsung - 128Mb DDR SDRAM
  2426. K4H511638B-TLA2 Samsung - 128Mb DDR SDRAM
  2427. K4H511638B-TLB0 Samsung - 128Mb DDR SDRAM
  2428. K4H511638C Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2429. K4H511638C-TCA0 Samsung - 128Mb DDR SDRAM
  2430. K4H511638C-TCA2 Samsung - 128Mb DDR SDRAM
  2431. K4H511638C-TCB0 Samsung - 128Mb DDR SDRAM
  2432. K4H511638C-TLA0 Samsung - 128Mb DDR SDRAM
  2433. K4H511638C-TLA2 Samsung - 128Mb DDR SDRAM
  2434. K4H511638C-TLB0 Samsung - 128Mb DDR SDRAM
  2435. K4H511638C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2436. K4H511638C-UC(L)/CC,B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2437. K4H511638C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2438. K4H511638C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2439. K4H511638C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2440. K4H511638C-UCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2441. K4H511638C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2442. K4H511638C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2443. K4H511638C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2444. K4H511638C-ULCC Samsung - 512Mb C-die DDR SDRAM Specification
  2445. K4H511638C-Z Samsung - 512Mb C-die DDR SDRAM Specification
  2446. K4H511638C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2447. K4H511638C-ZCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2448. K4H511638C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2449. K4H511638C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2450. K4H511638D Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2451. K4H511638D-LA2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2452. K4H511638D-LB0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2453. K4H511638D-LB3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2454. K4H511638D-LCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2455. K4H511638D-TCA0 Samsung - 128Mb DDR SDRAM
  2456. K4H511638D-TCA2 Samsung - 128Mb DDR SDRAM
  2457. K4H511638D-TCB0 Samsung - 128Mb DDR SDRAM
  2458. K4H511638D-TLA0 Samsung - 128Mb DDR SDRAM
  2459. K4H511638D-TLA2 Samsung - 128Mb DDR SDRAM
  2460. K4H511638D-TLB0 Samsung - 128Mb DDR SDRAM
  2461. K4H511638D-UC0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2462. K4H511638D-UC2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2463. K4H511638D-UC3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2464. K4H511638D-UCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2465. K4H511638D-UC/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2466. K4H511638E-TCA0 Samsung - 128Mb DDR SDRAM
  2467. K4H511638E-TCA2 Samsung - 128Mb DDR SDRAM
  2468. K4H511638E-TCB0 Samsung - 128Mb DDR SDRAM
  2469. K4H511638E-TLA0 Samsung - 128Mb DDR SDRAM
  2470. K4H511638E-TLA2 Samsung - 128Mb DDR SDRAM
  2471. K4H511638E-TLB0 Samsung - 128Mb DDR SDRAM
  2472. K4H511638M-TCA0 Samsung - 128Mb DDR SDRAM
  2473. K4H511638M-TCA2 Samsung - 128Mb DDR SDRAM
  2474. K4H511638M-TCB0 Samsung - 128Mb DDR SDRAM
  2475. K4H511638M-TLA0 Samsung - 128Mb DDR SDRAM
  2476. K4H511638M-TLA2 Samsung - 128Mb DDR SDRAM
  2477. K4H511638M-TLB0 Samsung - 128Mb DDR SDRAM
  2478. K4H513238A-TCA0 Samsung - 128Mb DDR SDRAM
  2479. K4H513238A-TCA2 Samsung - 128Mb DDR SDRAM
  2480. K4H513238A-TCB0 Samsung - 128Mb DDR SDRAM
  2481. K4H513238A-TLA0 Samsung - 128Mb DDR SDRAM
  2482. K4H513238A-TLA2 Samsung - 128Mb DDR SDRAM
  2483. K4H513238A-TLB0 Samsung - 128Mb DDR SDRAM
  2484. K4H513238B-TCA0 Samsung - 128Mb DDR SDRAM
  2485. K4H513238B-TCA2 Samsung - 128Mb DDR SDRAM
  2486. K4H513238B-TCB0 Samsung - 128Mb DDR SDRAM
  2487. K4H513238B-TLA0 Samsung - 128Mb DDR SDRAM
  2488. K4H513238B-TLA2 Samsung - 128Mb DDR SDRAM
  2489. K4H513238B-TLB0 Samsung - 128Mb DDR SDRAM
  2490. K4H513238C-TCA0 Samsung - 128Mb DDR SDRAM
  2491. K4H513238C-TCA2 Samsung - 128Mb DDR SDRAM
  2492. K4H513238C-TCB0 Samsung - 128Mb DDR SDRAM
  2493. K4H513238C-TLA0 Samsung - 128Mb DDR SDRAM
  2494. K4H513238C-TLA2 Samsung - 128Mb DDR SDRAM
  2495. K4H513238C-TLB0 Samsung - 128Mb DDR SDRAM
  2496. K4H513238D-TCA0 Samsung - 128Mb DDR SDRAM
  2497. K4H513238D-TCA2 Samsung - 128Mb DDR SDRAM
  2498. K4H513238D-TCB0 Samsung - 128Mb DDR SDRAM
  2499. K4H513238D-TLA0 Samsung - 128Mb DDR SDRAM
  2500. K4H513238D-TLA2 Samsung - 128Mb DDR SDRAM
  2501. K4H513238D-TLB0 Samsung - 128Mb DDR SDRAM
  2502. K4H513238E-TCA0 Samsung - 128Mb DDR SDRAM
  2503. K4H513238E-TCA2 Samsung - 128Mb DDR SDRAM
  2504. K4H513238E-TCB0 Samsung - 128Mb DDR SDRAM
  2505. K4H513238E-TLA0 Samsung - 128Mb DDR SDRAM
  2506. K4H513238E-TLA2 Samsung - 128Mb DDR SDRAM
  2507. K4H513238E-TLB0 Samsung - 128Mb DDR SDRAM
  2508. K4H513238M-TCA0 Samsung - 128Mb DDR SDRAM
  2509. K4H513238M-TCA2 Samsung - 128Mb DDR SDRAM
  2510. K4H513238M-TCB0 Samsung - 128Mb DDR SDRAM
  2511. K4H513238M-TLA0 Samsung - 128Mb DDR SDRAM
  2512. K4H513238M-TLA2 Samsung - 128Mb DDR SDRAM
  2513. K4H513238M-TLB0 Samsung - 128Mb DDR SDRAM
  2514. K4H56038D-TC Samsung - 256mb D-die Ddr400 Sdram Specification
  2515. K4H560438 Samsung - 128Mb DDR SDRAM
  2516. K4H560438A-TCA0 Samsung - 128Mb DDR SDRAM
  2517. K4H560438A-TCA2 Samsung - 128Mb DDR SDRAM
  2518. K4H560438A-TCB0 Samsung - 128Mb DDR SDRAM
  2519. K4H560438A-TLA0 Samsung - 128Mb DDR SDRAM
  2520. K4H560438A-TLA2 Samsung - 128Mb DDR SDRAM
  2521. K4H560438A-TLB0 Samsung - 128Mb DDR SDRAM
  2522. K4H560438B Samsung - K4H560438B 256Mb DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266
  2523. K4H560438B-TCA0 Samsung - 128Mb DDR SDRAM
  2524. K4H560438B-TCA2 Samsung - 128Mb DDR SDRAM
  2525. K4H560438B-TCB0 Samsung - 128Mb DDR SDRAM
  2526. K4H560438B-TLA0 Samsung - 128Mb DDR SDRAM
  2527. K4H560438B-TLA2 Samsung - 128Mb DDR SDRAM
  2528. K4H560438B-TLB0 Samsung - 128Mb DDR SDRAM
  2529. K4H560438C Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2530. K4H560438C-CA2 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2531. K4H560438C-CB3 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2532. K4H560438C-LA2 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2533. K4H560438C-LB3 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2534. K4H560438C-TCA0 Samsung - 128Mb DDR SDRAM
  2535. K4H560438C-TCA2 Samsung - 128Mb DDR SDRAM
  2536. K4H560438C-TCB0 Samsung - 128Mb DDR SDRAM
  2537. K4H560438C-TLA0 Samsung - 128Mb DDR SDRAM
  2538. K4H560438C-TLA2 Samsung - 128Mb DDR SDRAM
  2539. K4H560438C-TLB0 Samsung - 128Mb DDR SDRAM
  2540. K4H560438D Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2541. K4H560438D-GC Samsung - Ddr 256mb
  2542. K4H560438D-GCA2 Samsung - DDR 256Mb
  2543. K4H560438D-GCB0 Samsung - DDR 256Mb
  2544. K4H560438D-GCB3 Samsung - DDR 256Mb
  2545. K4H560438D-GLA2 Samsung - DDR 256Mb
  2546. K4H560438D-GLB0 Samsung - DDR 256Mb
  2547. K4H560438D-GLB3 Samsung - DDR 256Mb
  2548. K4H560438D-NC Samsung - 256mb Stsopii
  2549. K4H560438D-TC Samsung - 256mb
  2550. K4H560438D-TCA0 Samsung - 128Mb DDR SDRAM
  2551. K4H560438D-TCA2 Samsung - 128Mb DDR SDRAM
  2552. K4H560438D-TCB0 Samsung - 128Mb DDR SDRAM
  2553. K4H560438D-TC/LA0 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2554. K4H560438D-TC/LA2 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2555. K4H560438D-TC/LB0 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2556. K4H560438D-TC/LB3 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2557. K4H560438D-TLA0 Samsung - 128Mb DDR SDRAM
  2558. K4H560438D-TLA2 Samsung - 128Mb DDR SDRAM
  2559. K4H560438D-TLB0 Samsung - 128Mb DDR SDRAM
  2560. K4H560438E Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2561. K4H560438E-GC Samsung - 256mb E-die Ddr Sdram Specification 60ball Fbga (x4/x8)
  2562. K4H560438E-GCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2563. K4H560438E-GCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2564. K4H560438E-GCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2565. K4H560438E-GCC4 Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2566. K4H560438E-GCCC Samsung - 256mb E-die Ddr 400 Sdram Specification 60ball Fbga (x4/x8)
  2567. K4H560438E-GLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2568. K4H560438E-GLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2569. K4H560438E-GLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2570. K4H560438E-NC Samsung - 256mb E-die Ddr Sdram Specification 54pin Stsop(ii)
  2571. K4H560438E-NCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2572. K4H560438E-NCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2573. K4H560438E-NCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2574. K4H560438E-NLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2575. K4H560438E-NLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2576. K4H560438E-NLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2577. K4H560438E-TC Samsung - 256mb E-die Ddr Sdram Specification 66 Tsop-ii
  2578. K4H560438E-TCA0 Samsung - 128Mb DDR SDRAM
  2579. K4H560438E-TCA2 Samsung - 128Mb DDR SDRAM
  2580. K4H560438E-TCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2581. K4H560438E-TCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2582. K4H560438E-TCB0 Samsung - 128Mb DDR SDRAM
  2583. K4H560438E-TCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2584. K4H560438E-TCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2585. K4H560438E-TC/LA2 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2586. K4H560438E-TC/LAA Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2587. K4H560438E-TC/LB0 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2588. K4H560438E-TC/LB3 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2589. K4H560438E-TLA0 Samsung - 128Mb DDR SDRAM
  2590. K4H560438E-TLA2 Samsung - 128Mb DDR SDRAM
  2591. K4H560438E-TLA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2592. K4H560438E-TLAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2593. K4H560438E-TLB0 Samsung - 128Mb DDR SDRAM
  2594. K4H560438E-TLB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2595. K4H560438E-TLB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2596. K4H560438E-UC Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2597. K4H560438E-UCA2 Samsung - 256mb E-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2598. K4H560438E-UCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2599. K4H560438E-UCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2600. K4H560438E-UCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2601. K4H560438E-ULA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2602. K4H560438E-ULAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2603. K4H560438E-ULB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2604. K4H560438E-ULB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2605. K4H560438E-VC Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2606. K4H560438E-VCA2 Samsung - 256mb E-die Ddr Sdram Specification 54 Stsop-ii With Pb-free (rohs Compliant)
  2607. K4H560438E-VCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2608. K4H560438E-VCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2609. K4H560438E-VLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2610. K4H560438E-VLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2611. K4H560438E-VLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2612. K4H560438E-ZC Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2613. K4H560438E-ZCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2614. K4H560438E-ZCB0 Samsung - 256mb E-die Ddr Sdram Specification 60 Fbga With Pb-free (rohs Compliant)
  2615. K4H560438E-ZCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2616. K4H560438E-ZLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2617. K4H560438E-ZLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2618. K4H560438E-ZLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2619. K4H560438M-TCA0 Samsung - 128Mb DDR SDRAM
  2620. K4H560438M-TCA2 Samsung - 128Mb DDR SDRAM
  2621. K4H560438M-TCB0 Samsung - 128Mb DDR SDRAM
  2622. K4H560438M-TLA0 Samsung - 128Mb DDR SDRAM
  2623. K4H560438M-TLA2 Samsung - 128Mb DDR SDRAM
  2624. K4H560438M-TLB0 Samsung - 128Mb DDR SDRAM
  2625. K4H560838A-TCA0 Samsung - 128Mb DDR SDRAM
  2626. K4H560838A-TCA2 Samsung - 128Mb DDR SDRAM
  2627. K4H560838A-TCB0 Samsung - 128Mb DDR SDRAM
  2628. K4H560838A-TLA0 Samsung - 128Mb DDR SDRAM
  2629. K4H560838A-TLA2 Samsung - 128Mb DDR SDRAM
  2630. K4H560838A-TLB0 Samsung - 128Mb DDR SDRAM
  2631. K4H560838B Samsung - 128Mb DDR SDRAM
  2632. K4H560838B-TCA0 Samsung - 128Mb DDR SDRAM
  2633. K4H560838B-TCA2 Samsung - 128Mb DDR SDRAM
  2634. K4H560838B-TCB0 Samsung - 128Mb DDR SDRAM
  2635. K4H560838B-TLA0 Samsung - 128Mb DDR SDRAM
  2636. K4H560838B-TLA2 Samsung - 128Mb DDR SDRAM
  2637. K4H560838B-TLB0 Samsung - 128Mb DDR SDRAM
  2638. K4H560838C Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2639. K4H560838C-CA2 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2640. K4H560838C-CB3 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2641. K4H560838C-LA2 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2642. K4H560838C-LB3 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2643. K4H560838C-TCA0 Samsung - 128Mb DDR SDRAM
  2644. K4H560838C-TCA2 Samsung - 128Mb DDR SDRAM
  2645. K4H560838C-TCB0 Samsung - 128Mb DDR SDRAM
  2646. K4H560838C-TLA0 Samsung - 128Mb DDR SDRAM
  2647. K4H560838C-TLA2 Samsung - 128Mb DDR SDRAM
  2648. K4H560838C-TLB0 Samsung - 128Mb DDR SDRAM
  2649. K4H560838D Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2650. K4H560838D-GCA2 Samsung - DDR 256Mb
  2651. K4H560838D-GCB0 Samsung - DDR 256Mb
  2652. K4H560838D-GCB3 Samsung - DDR 256Mb
  2653. K4H560838D-GLA2 Samsung - DDR 256Mb
  2654. K4H560838D-GLB0 Samsung - DDR 256Mb
  2655. K4H560838D-GLB3 Samsung - DDR 256Mb
  2656. K4H560838D-TCA0 Samsung - 128Mb DDR SDRAM
  2657. K4H560838D-TCA2 Samsung - 128Mb DDR SDRAM
  2658. K4H560838D-TCB0 Samsung - 128Mb DDR SDRAM
  2659. K4H560838D-TCC4 Samsung - 256Mb D-die DDR400 SDRAM Specification
  2660. K4H560838D-TCCC Samsung - 256Mb D-die DDR400 SDRAM Specification
  2661. K4H560838D-TC/LA0 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2662. K4H560838D-TC/LA2 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2663. K4H560838D-TC/LB0 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2664. K4H560838D-TC/LB3 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2665. K4H560838D-TLA0 Samsung - 128Mb DDR SDRAM
  2666. K4H560838D-TLA2 Samsung - 128Mb DDR SDRAM
  2667. K4H560838D-TLB0 Samsung - 128Mb DDR SDRAM
  2668. K4H560838E Samsung - DDR SDRAM 256Mb E-die (x4, x8)
  2669. K4H560838E-GCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2670. K4H560838E-GCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2671. K4H560838E-GCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2672. K4H560838E-GCC4 Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2673. K4H560838E-GCCC Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2674. K4H560838E-GLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2675. K4H560838E-GLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2676. K4H560838E-GLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2677. K4H560838E-NCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2678. K4H560838E-NCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2679. K4H560838E-NCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2680. K4H560838E-NLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2681. K4H560838E-NLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2682. K4H560838E-NLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2683. K4H560838E-TCA0 Samsung - 128Mb DDR SDRAM
  2684. K4H560838E-TCA2 Samsung - 128Mb DDR SDRAM
  2685. K4H560838E-TCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2686. K4H560838E-TCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2687. K4H560838E-TCB0 Samsung - 128Mb DDR SDRAM
  2688. K4H560838E-TCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2689. K4H560838E-TCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2690. K4H560838E-TC/LA2 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2691. K4H560838E-TC/LAA Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2692. K4H560838E-TC/LB0 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2693. K4H560838E-TC/LB3 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2694. K4H560838E-TLA0 Samsung - 128Mb DDR SDRAM
  2695. K4H560838E-TLA2 Samsung - 128Mb DDR SDRAM
  2696. K4H560838E-TLA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2697. K4H560838E-TLAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2698. K4H560838E-TLB0 Samsung - 128Mb DDR SDRAM
  2699. K4H560838E-TLB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2700. K4H560838E-TLB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2701. K4H560838E-UCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2702. K4H560838E-UCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2703. K4H560838E-UCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2704. K4H560838E-UCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2705. K4H560838E-ULA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2706. K4H560838E-ULAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2707. K4H560838E-ULB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2708. K4H560838E-ULB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2709. K4H560838E-VCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2710. K4H560838E-VCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2711. K4H560838E-VCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2712. K4H560838E-VLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2713. K4H560838E-VLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2714. K4H560838E-VLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2715. K4H560838E-ZCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2716. K4H560838E-ZCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2717. K4H560838E-ZCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2718. K4H560838E-ZLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2719. K4H560838E-ZLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2720. K4H560838E-ZLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2721. K4H560838F Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2722. K4H560838F-TC Samsung - 256mb F-die Ddr400 Sdram Specification
  2723. K4H560838F-TCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  2724. K4H560838F-TCCC Samsung - 256Mb F-die DDR400 SDRAM Specification
  2725. K4H560838F-TC/LA2 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2726. K4H560838F-TC/LAA Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2727. K4H560838F-TC/LB0 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2728. K4H560838F-TC/LB3 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2729. K4H560838F-UCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  2730. K4H560838F-UCCC Samsung - 256mb F-die Ddr400 Sdram Specification
  2731. K4H560838M-TCA0 Samsung - 128Mb DDR SDRAM
  2732. K4H560838M-TCA2 Samsung - 128Mb DDR SDRAM
  2733. K4H560838M-TCB0 Samsung - 128Mb DDR SDRAM
  2734. K4H560838M-TLA0 Samsung - 128Mb DDR SDRAM
  2735. K4H560838M-TLA2 Samsung - 128Mb DDR SDRAM
  2736. K4H560838M-TLB0 Samsung - 128Mb DDR SDRAM
  2737. K4H561638A-TCA0 Samsung - 128Mb DDR SDRAM
  2738. K4H561638A-TCA2 Samsung - 128Mb DDR SDRAM
  2739. K4H561638A-TCB0 Samsung - 128Mb DDR SDRAM
  2740. K142 Sanyo - Very High-Speed Switching Applications
  2741. K1462 Sanyo - Very High-Speed Switching Applications
  2742. k246 Sanyo - Ultrahigh-Speed Switching Applications
  2743. K2161 Sanyo - Very High-Speed Switching Applications
  2744. K1.1-M16 Semikron - For stud devices
  2745. K1.1 Semikron - For Stud Devices
  2746. K25C81 Semtech - Versatile Pc/xc/at/ps/2 Compatible Keyboard Encoder
  2747. K25C81-FB Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  2748. K25C81-FN Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  2749. K25C81-P Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  2750. K2564 Shindengen - VX-2 Series Power MOSFET(600V 8A)
  2751. K2185 Shindengen - VX-2 Series Power MOSFET(500V5A)
  2752. K1V10 Shindengen - Sidac
  2753. K1V11 Shindengen - Sidac
  2754. K1V12 Shindengen - Sidac
  2755. K1V14 Shindengen - Sidac
  2756. K1V16 Shindengen - Sidac
  2757. K1V18 Shindengen - Sidac
  2758. K1V22 Shindengen - Sidac
  2759. K1V22W Shindengen - Sidac
  2760. K1V24 Shindengen - Sidac
  2761. K1V24W Shindengen - Sidac
  2762. K1V26 Shindengen - Sidac
  2763. K1V26W Shindengen - Sidac
  2764. K1V33 Shindengen - Sidac
  2765. K1V33W Shindengen - Sidac
  2766. K1V34 Shindengen - Sidac
  2767. K1V34W Shindengen - Sidac
  2768. K1V36 Shindengen - Sidac
  2769. K1V36W Shindengen - Sidac
  2770. K1V38 Shindengen - Sidac
  2771. K1V38W Shindengen - Sidac
  2772. K1V5 Shindengen - Sidac
  2773. K1V6 Shindengen - Sidac
  2774. K1V8 Shindengen - Sidac
  2775. K1VA10 Shindengen - Sidac
  2776. K1VA11 Shindengen - Sidac
  2777. K1VA12 Shindengen - Sidac
  2778. K1VA14 Shindengen - Sidac
  2779. K1VA16 Shindengen - Sidac
  2780. K179 Siemens - Silicon Piezoresistive Absolute Pressure Sensor
  2781. K164 Siemens - Temperaturmessung Bedrahtete Scheiben
  2782. k246 Siemens - Silicon Spreading Resistance Temperature Sensor In Miniature Leaded Plastic Package
  2783. K14N04FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  2784. K10N06FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  2785. K10N07FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  2786. K1100G Teccor - Thyristor Product Catalog
  2787. K1100G Teccor - silicon bilateral voltage triggered switch
  2788. K1100S Teccor - Thyristor Product Catalog
  2789. K1100S Teccor - silicon bilateral voltage triggered switch
  2790. K1200E70 Teccor - Thyristor Product Catalog
  2791. K1200E70 Teccor - silicon bilateral voltage triggered switch
  2792. K1200G Teccor - Thyristor Product Catalog
  2793. K1200G Teccor - silicon bilateral voltage triggered switch
  2794. K1200S Teccor - Thyristor Product Catalog
  2795. K1200S Teccor - silicon bilateral voltage triggered switch
  2796. K1500E70 Teccor - Thyristor Product Catalog
  2797. K1500E70 Teccor - silicon bilateral voltage triggered switch
  2798. K1500G Teccor - Thyristor Product Catalog
  2799. K1500G Teccor - silicon bilateral voltage triggered switch
  2800. K1500S Teccor - Thyristor Product Catalog
  2801. K1500S Teccor - silicon bilateral voltage triggered switch
  2802. K1100E70 Teccor - Thyristor Product Catalog
  2803. K1100E70 Teccor - silicon bilateral voltage triggered switch
  2804. K1400E70 Teccor - Thyristor Product Catalog
  2805. K1400E70 Teccor - silicon bilateral voltage triggered switch
  2806. K1400G Teccor - Thyristor Product Catalog
  2807. K1400G Teccor - silicon bilateral voltage triggered switch
  2808. K1400S Teccor - Thyristor Product Catalog
  2809. K1400S Teccor - silicon bilateral voltage triggered switch
  2810. K1300E70 Teccor - Thyristor Product Catalog
  2811. K1300E70 Teccor - silicon bilateral voltage triggered switch
  2812. K1300G Teccor - Thyristor Product Catalog
  2813. K1300G Teccor - silicon bilateral voltage triggered switch
  2814. K1300S Teccor - Thyristor Product Catalog
  2815. K1300S Teccor - silicon bilateral voltage triggered switch
  2816. K1050E70 Teccor - Thyristor Product Catalog
  2817. K1050E70 Teccor - Silicon Bilateral Voltage Triggered Switch
  2818. K1050F70 Teccor - Thyristor Product Catalog
  2819. K1050G Teccor - Thyristor Product Catalog
  2820. K1050G Teccor - silicon bilateral voltage triggered switch
  2821. K1050G70 Teccor - Thyristor Product Catalog
  2822. K1050S Teccor - Thyristor Product Catalog
  2823. K1050S Teccor - silicon bilateral voltage triggered switch
  2824. K1050S70 Teccor - Thyristor Product Catalog
  2825. K0900E70 Teccor - Thyristor Product Catalog
  2826. K0900G Teccor - Thyristor Product Catalog
  2827. K0900S Teccor - Thyristor Product Catalog
  2828. K2000E70 Teccor - Thyristor Product Catalog
  2829. K2000E70 Teccor - silicon bilateral voltage triggered switch
  2830. K2000F1 Teccor - Thyristor Product Catalog
  2831. K2000F1 Teccor - silicon bilateral voltage triggered switch
  2832. K2000G Teccor - Thyristor Product Catalog
  2833. K2000G Teccor - silicon bilateral voltage triggered switch
  2834. K2000S Teccor - Thyristor Product Catalog
  2835. K2000S Teccor - silicon bilateral voltage triggered switch
  2836. K2200E70 Teccor - Thyristor Product Catalog
  2837. K2200E70 Teccor - silicon bilateral voltage triggered switch
  2838. K2200F1 Teccor - Thyristor Product Catalog
  2839. K2200F1 Teccor - silicon bilateral voltage triggered switch
  2840. K2200G Teccor - Thyristor Product Catalog
  2841. K2200G Teccor - silicon bilateral voltage triggered switch
  2842. K2200S Teccor - Thyristor Product Catalog
  2843. K2200S Teccor - silicon bilateral voltage triggered switch
  2844. K2400E70 Teccor - Thyristor Product Catalog
  2845. K2400E70 Teccor - silicon bilateral voltage triggered switch
  2846. K2400F1 Teccor - Thyristor Product Catalog
  2847. K2400F1 Teccor - silicon bilateral voltage triggered switch
  2848. K2400G Teccor - Thyristor Product Catalog
  2849. K2400G Teccor - silicon bilateral voltage triggered switch
  2850. K2400S Teccor - Thyristor Product Catalog
  2851. K2400S Teccor - silicon bilateral voltage triggered switch
  2852. K2401F1 Teccor - silicon bilateral voltage triggered switch
  2853. K2500E70 Teccor - Thyristor Product Catalog
  2854. K2500E70 Teccor - silicon bilateral voltage triggered switch
  2855. K2500F1 Teccor - Thyristor Product Catalog
  2856. K2500F1 Teccor - silicon bilateral voltage triggered switch
  2857. K2500G Teccor - Thyristor Product Catalog
  2858. K2500G Teccor - silicon bilateral voltage triggered switch
  2859. K2500S Teccor - Thyristor Product Catalog
  2860. K2500S Teccor - silicon bilateral voltage triggered switch
  2861. K3000F1 Teccor - Thyristor Product Catalog
  2862. K3000F1 Teccor - silicon bilateral voltage triggered switch
  2863. K3010 Vishay - Optocoupler With Phototriac Output
  2864. K3010P Vishay - Optocoupler with Phototriac Output
  2865. K3010PG Vishay - Optocoupler with Phototriac Output
  2866. K3011 Vishay - Optocoupler with Phototriac Output
  2867. K3011P Vishay - Optocoupler with Phototriac Output
  2868. K3011PG Vishay - Optocoupler with Phototriac Output
  2869. K3012 Vishay - Optocoupler with Phototriac Output
  2870. K3012P Vishay - Optocoupler with Phototriac Output
  2871. K3012PG Vishay - Optocoupler with Phototriac Output
  2872. K3020P Vishay - Optocoupler With Phototriac Output
  2873. K3020PG Vishay - Optocoupler with Phototriac Output
  2874. K3021P Vishay - Optocoupler with Phototriac Output
  2875. K3021PG Vishay - Optocoupler with Phototriac Output
  2876. K3022P Vishay - Optocoupler with Phototriac Output
  2877. K3022PG Vishay - Optocoupler with Phototriac Output
  2878. K3023P Vishay - Optocoupler with Phototriac Output
  2879. K3023PG Vishay - Optocoupler with Phototriac Output
  2880. K170 TOKO - Low Voltage Operational Amplifier
  2881. K15462L TOKO - For Dsc, DVC and Portable Video Equipment, Composite Signal, Built-in LPF
  2882. K11044 TOKO - Temperature Sensor Ic
  2883. K11044-44C TOKO - TEMPERATURE SENSOR IC
  2884. K11044TL TOKO - TEMPERATURE SENSOR IC
  2885. K170 Toshiba - FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
  2886. k246 Toshiba - N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER and DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
  2887. K2717 Toshiba - N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER and MOTOR DRIVE APPLICATIONS)
  2888. K2750 Toshiba - N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER and MOTOR DRIVE APPLICATIONS)
  2889. К154УД1А RD Alfa - Микромощный операционный усилитель
  2890. К154УД1Б RD Alfa - Микромощный операционный усилитель
  2891. К154УД3А RD Alfa - Быстродействующий операционный усилитель
  2892. К154УД3Б RD Alfa - Быстродействующий операционный усилитель
  2893. К154УД4А RD Alfa - Сверхбыстрый операционный усилитель
  2894. К154УД4Б RD Alfa - Сверхбыстрый операционный усилитель
  2895. К159НТ1А RD Alfa - Дифференциальная пара транзисторов
  2896. К159НТ1Б RD Alfa - Дифференциальная пара транзисторов
  2897. К159НТ1Д RD Alfa - Дифференциальная пара транзисторов
  2898. К159НТ1Е RD Alfa - Дифференциальная пара транзисторов
  2899. К159НТ1Г RD Alfa - Дифференциальная пара транзисторов
  2900. К159НТ1В RD Alfa - Дифференциальная пара транзисторов
  2901. К1475УД1Р RD Alfa - Быстрый широкополосный операционный усилитель
  2902. К1475УД1С RD Alfa - Быстрый широкополосный операционный усилитель
  2903. К1475УД3АТ RD Alfa - Четырехканальный операционный усилитель
  2904. К1475УД3БТ1 RD Alfa - Четырехканальный операционный усилитель
  2905. К1475УД4АТ RD Alfa - Четырехканальный операционный усилитель
  2906. К1475УД4БТ1 RD Alfa - Четырехканальный операционный усилитель
  2907. К129НТ1А-1 RD Alfa - Дифференциальная пара транзисторов
  2908. К129НТ1Б-1 RD Alfa - Дифференциальная пара транзисторов
  2909. К129НТ1Д-1 RD Alfa - Дифференциальная пара транзисторов
  2910. К129НТ1Е-1 RD Alfa - Дифференциальная пара транзисторов
  2911. К129НТ1Г-1 RD Alfa - Дифференциальная пара транзисторов
  2912. К129НТ1И-1 RD Alfa - Дифференциальная пара транзисторов
  2913. К129НТ1В-1 RD Alfa - Дифференциальная пара транзисторов
  2914. К129НТ1Ж-1 RD Alfa - Дифференциальная пара транзисторов
  2915. K-12001G Para Light - LCD Back Light, Cob Type, LCD Character 40x4
  2916. K-12001GX Para Light - LCD Back Light, Cob Type, LCD Character 40x4
  2917. K-13204G Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  2918. K-13204GX Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  2919. K-10004G Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  2920. K-10004GX Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  2921. K-05205GX-P Para Light - LCD Back Light, Cob Type, LCD Character 16x4
  2922. K-05401G Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  2923. K-05401GX Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  2924. K-05401GX-P Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  2925. K-05601G Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  2926. K-05601GX Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  2927. K-05601GX-P Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  2928. K-05606G Para Light - LCD Back Light, Cob Type, LCD Character 16x2(L)
  2929. K-05606GX Para Light - LCD Back Light, Cob Type, LCD Character 16x2(L)
  2930. K-06601G Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  2931. K-06601GX Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  2932. K-07205G Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  2933. K-03203G Para Light - LCD Back Light, Cob Type, LCD Character 16x1(L)
  2934. K-04204G Para Light - LCD Back Light, Cob Type, LCD Character 20x2
  2935. K-05205G Para Light - LCD Back Light, Cob Type, LCD Character 16x4
  2936. K-04211G Para Light - LCD Back Light, Cob Type, LCD Character 20x2
  2937. K-02416G Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  2938. K-02416GX Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  2939. K-02425G Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  2940. K-02425GX-P3 Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  2941. K-02615G Para Light - LCD Back Light, Cob Type, LCD Character 16x1
  2942. K-02615GX-P3 Para Light - LCD Back Light, Cob Type, LCD Character 16x1
  2943. K-01401G Para Light - LCD Back Light, Cob Type, LCD Character 8x2
  2944. K-01401GX Para Light - LCD Back Light, Cob Type, LCD Character 8x2
  2945. K-18001G-P Para Light - LCD Back Light, Cob Type, LCD Character 240x128
  2946. K-18004SRDG-P Para Light - LCD Back Light, Cob Type, LCD Character 240x128
  2947. K3390S1724 Carlo Gavazzi - Accessories
  2948. K25S Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 3000, Package = Axial-leaded,epoxy, Termina...
  2949. K25UF Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 100, Package = Axial-leaded,epoxy, Terminat...
  2950. K25F Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 200, Package = Axial-leaded,epoxy, Terminat...
  2951. K100F Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 200, Package = Axial-leaded,epoxy, Terminati...
  2952. K100S Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 3000, Package = Axial-leaded,epoxy, Terminat...
  2953. K100UF Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 100, Package = Axial-leaded,epoxy, Terminati...
  2954. K1100BA MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic...
  2955. K1110D MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  2956. K1120D MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  2957. K1144B MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.750 to 35.000 MHZ, Output Logic...
  2958. K1149 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 40.000 to 160.000 MHZ, Output Logi...
  2959. K1149CQA MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 139.264, 155.520 MHZ, Output Logic...
  2960. K1149DAD MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 77.760 MHZ, Output Logic = Pecl,...
  2961. K11041 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = up to 140.000 MHZ, Output Logic =...
  2962. K1100F MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.500 to 100.000 MHZ, Output Logic...
  2963. K1300 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 70.000 to 120.000 MHZ, Output Logi...
  2964. K1523BA MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 35.000 MHZ, Output Logic = CM...
  2965. K1524A MtronPTI - Package Description = 14 Pin Dip, Frequency = 3.000 to 35.000 MHZ, Output Logic = CM...
  2966. K1525C MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 55.000 MHZ, Output Logic = CM...
  2967. K1526A MtronPTI - Package Description = 9 X 14 MM J-lead, Frequency = 2.000 to 40.000 MHZ, Output Logi...
  2968. K1526B MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2969. K1526BLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2970. K1526C MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2971. K1526CLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2972. K1526D MtronPTI - Package Description = 9 X 14 MM J-lead, Frequency = 2.000 to 160.000 MHZ, Output Log...
  2973. K1527A MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 51.840 MHZ, Output Logic = CM...
  2974. K1528D MtronPTI - Package Description = 14 Pin Dip, Frequency = 35.000 to 105.000 MHZ, Output Logic =...
  2975. K1536B MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2976. K1603T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2977. K1700A MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  2978. K17255B MtronPTI - Package Description = 14 Pin Dip, Frequency = 155.520 MHZ, Output Logic = 10KH Pecl...
  2979. K1601 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 16.000 to 30.000 MHZ, Output Logic...
  2980. K1601T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2981. K1601TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2982. K1602 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 16.000 to 30.000 MHZ, Output Logic...
  2983. K1602SE MtronPTI - Package Description = 14 Pin Dip, Frequency = 90.000 to 115.000 MHZ, Output Logic =...
  2984. K1602T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2985. K1602TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2986. K1603TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2987. K1610 MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 27.000 MHZ, Output Logic = Cl...
  2988. K1610T MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 30.000 MHZ, Output Logic...
  2989. K1613 MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 25.000 MHZ, Output Logic = Cl...
  2990. K1400A MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = up to 140.000 MHZ, Output Logic =...
  2991. K1536C MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2992. K1536CLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2993. K1536BLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2994. K1570A MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  2995. K1570AQA MtronPTI - Package Description = 14 Pin Gull Wing, Frequency = 1.000 to 52.000 MHZ, Output Logi...
  2996. K1570AQG MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  2997. K1570AQH MtronPTI - Package Description = 14 Pin Dip, Frequency = 25.000 to 52.000 MHZ, Output Logic = C...
  2998. K1573A MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  2999. K3500G MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic =...
  3000. K3100G MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic...