NTE5580 NTE - Silicon Controlled Rectifier for Phase Control Applications
NTE5582 NTE - Silicon Controlled Rectiifier For Phase Control Applications. Repetitive Peak Off-state and Reverse Voltage Vdrm,vrrm = 600V. Max RMS On-state Current It(rms) = 235A.
NTE5584 NTE - Silicon Controlled Rectiifier For Phase Control Applications. Repetitive Peak Off-state and Reverse Voltage Vdrm,vrrm = 1200V. Max RMS On-state Current It(rms) = 235A.
NTE5585 NTE - Silicon Controlled Rectifier for Phase Control Applications
NTE5586 NTE - Silicon Controlled Rectifier For Phase Control Applications
NTE5587 NTE - Silicon Controlled Rectifier For Phase Control Applications
NTE5588 NTE - Silicon Controlled Rectifier for Phase Control Applications
NTE5589 NTE - Silicon Controlled Rectifier for Phase Control Applications
NTE5814 NTE - 6 Amp. Plastic Silicon Rectifier. Max Recurrent Peak Reverse Voltage 400V. Max RMS Voltage 280V. Max Average Forward Rectified Current 6A.
NTE5815 NTE - 6 Amp. Plastic Silicon Rectifier. Max Recurrent Peak Reverse Voltage 600V. Max RMS Voltage 420V. Max Average Forward Rectified Current 6A.
NTF6P02T3 ON Semiconductor - Power Mosfet -6.0 Amps, -20 Volts P-channel Sot-223
NTGD4161P ON Semiconductor - Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 * Fast Switching Speed * Low Gate Charge * Low RDS(on) * Indpendently Connected Devices to Provide Design Flexibility * This isA Pb-Free Device
NTGD4161PT1G ON Semiconductor - Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 * Fast Switching Speed * Low Gate Charge * Low RDS(on) * Indpendently Connected Devices to Provide Design Flexibility * This isA Pb-Free Device
NTGS3433T1 ON Semiconductor - MOSFET -3.3 Amps, -12 Volts
NTGS3441T1 ON Semiconductor - Power Mosfet 1 Amp, 20 Volts
NTGS3441T1G ON Semiconductor - Power MOSFET 1 Amp, 20 Volts
NTGS3443T1 ON Semiconductor - Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6
NTGS3443T1/D ON Semiconductor - Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6
NTGS3443T1G ON Semiconductor - Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6
NTGS3446 ON Semiconductor - Power Mosfet 5.1 Amps, 20 Volts N−channel Tsop−6
NTGS3446T1 ON Semiconductor - Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6
NTGS3446T1G ON Semiconductor - Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6
NTGS4111P ON Semiconductor - Power MOSFET -30 V, -4.7A, Single P-Channel, TSOP-6 Leading −30V Trench Process For Low RDS(on) Low Profile Package Suitable For Portable Applications Surface Mount TSOP−6 Package Saves Board Space Pb−Free Package Available (G Suffix) Improved Efficiency For Battery ApplicationsApplications Battery Management and Switching Load Switching Battery Protection
NTGS4111PT1 ON Semiconductor - Power MOSFET -30 V, -4.7A, Single P-Channel, TSOP-6 Leading −30V Trench Process For Low RDS(on) Low Profile Package Suitable For Portable Applications Surface Mount TSOP−6 Package Saves Board Space Pb−Free Package Available (G Suffix) Improved Efficiency For Battery ApplicationsApplications Battery Management and Switching Load Switching Battery Protection
NTGS4111PT1G ON Semiconductor - Power MOSFET -30 V, -4.7A, Single P-Channel, TSOP-6 Leading −30V Trench Process For Low RDS(on) Low Profile Package Suitable For Portable Applications Surface Mount TSOP−6 Package Saves Board Space Pb−Free Package Available (G Suffix) Improved Efficiency For Battery ApplicationsApplications Battery Management and Switching Load Switching Battery Protection
NTH C&D - Isolated 2W Dual Output SM DC-DC Converters
NTHD2102P ON Semiconductor - Power Mosfet −8.0 V, −4.6A Dual P−channel Chipfet
NTHD2102PT1 ON Semiconductor - Power MOSFET −8.0 V, −4.6A Dual P−Channel ChipFET
NTHD2102PT1G ON Semiconductor - Power MOSFET −8.0 V, −4.6A Dual P−Channel ChipFET
NTHD3100C ON Semiconductor - Power MOSFET Complementary, 20 V, 3.1 A/-2.9A ChipFET Features Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller Than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Trench P−Channel For Low on Resistance Low Gate Charge N−Channel For Test Switching Pb−Free Package is AvailableApplications DC−to−DC Conversion Circuits Load Switch Applications Requiring Level Shift Drive Small Brushless DC Motors Ideal For Power Management Appl
NTHD3100CT1 ON Semiconductor - Power MOSFET Complementary, 20 V, 3.1 A/-2.9A ChipFET Features Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller Than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Trench P−Channel For Low on Resistance Low Gate Charge N−Channel For Test Switching Pb−Free Package is AvailableApplications DC−to−DC Conversion Circuits Load Switch Applications Requiring Level Shift Drive Small Brushless DC Motors Ideal For Power Management Appl
NTHD3100CT1G ON Semiconductor - Power MOSFET Complementary, 20 V, 3.1 A/-2.9A ChipFET Features Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller Than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Trench P−Channel For Low on Resistance Low Gate Charge N−Channel For Test Switching Pb−Free Package is AvailableApplications DC−to−DC Conversion Circuits Load Switch Applications Requiring Level Shift Drive Small Brushless DC Motors Ideal For Power Management Appl
NTHD3100CT3 ON Semiconductor - Power MOSFET Complementary, 20 V, 3.1 A/-2.9A ChipFET Features Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller Than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Trench P−Channel For Low on Resistance Low Gate Charge N−Channel For Test Switching Pb−Free Package is AvailableApplications DC−to−DC Conversion Circuits Load Switch Applications Requiring Level Shift Drive Small Brushless DC Motors Ideal For Power Management Appl
NTHD3101F ON Semiconductor - Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, W/2.2A Schottky Barrier Diode,
NTHD3101FT1 ON Semiconductor - Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, W/2.2A Schottky Barrier Diode,
NTHD3101FT1G ON Semiconductor - Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, W/2.2A Schottky Barrier Diode,
NTHD3101FT3 ON Semiconductor - Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, W/2.2A Schottky Barrier Diode,
NTHD4102P ON Semiconductor - Power Mosfet -20 V, -4.1 A, Dual P-channel Chipfet
NTHD4102PT1 ON Semiconductor - Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET
NTHD4102PT1G ON Semiconductor - Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET
NTHD4401P ON Semiconductor - Power Mosfet −20 V, −3.0 A, Dual P−channel, Chipfet
NTHD4401PT1 ON Semiconductor - Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET
NTHD4401PT1G ON Semiconductor - Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET
NTHD4502N ON Semiconductor - Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET
NTHD4502NT1 ON Semiconductor - Power Mosfet 30 V, 3.9 A, Dual N−channel Chipfet
NTHD4502NT1G ON Semiconductor - Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET
NTHD4508N ON Semiconductor - Power Mosfet 20 V, 4.1 A, Dual N−channel Chipfet
NTHD4508NT1 ON Semiconductor - Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET
NTHD4508NT1G ON Semiconductor - Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET
NTHD4N02F ON Semiconductor - Power MOSFET and Schottky Diode
NTHD4N02FT1 ON Semiconductor - Power MOSFET and Schottky Diode
NTHD4N02FT1G ON Semiconductor - Power MOSFET and Schottky Diode
NTHD4P02FT1 ON Semiconductor - Power Mosfet and Schottky Diode
NTHD4P02FT1G ON Semiconductor - Power MOSFET and Schottky Diode
NTHD5902T1 ON Semiconductor - Power MOSFET Dual N−Channel ChipFET
NTHD5903T1 ON Semiconductor - Power Mosfet Dual P-channel Chipfet
NTHD5903T1-D ON Semiconductor - Power MOSFET Dual P-Channel ChipFET
NTHD5904T1 ON Semiconductor - Dual N Channel 2.5V (G-S) MOSFET, Package: ChipFET, Pins=8
NTHD5905T1 ON Semiconductor - Dual P Channel 1.8V (G-S) MOSFET, Package: ChipFET, Pins=8
NTJD4001NT1 ON Semiconductor - Small Signal Mosfet
NTJD4001NT1G ON Semiconductor - Small Signal MOSFET
NTJD4105C ON Semiconductor - Small Signal MOSFET 20V / −8.0 V, Complementary, +0.63A / −0.775 A, SC−88
NTJD4105CT1 ON Semiconductor - Small Signal MOSFET 20V / −8.0 V, Complementary, +0.63A / −0.775 A, SC−88
NTJD4105CT1G ON Semiconductor - Small Signal MOSFET 20V / −8.0 V, Complementary, +0.63A / −0.775 A, SC−88
NTJD4105CT2 ON Semiconductor - Small Signal MOSFET 20V / −8.0 V, Complementary, +0.63A / −0.775 A, SC−88
NTJD4152P ON Semiconductor - Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, Esd Protected SC-88Features Leading Trench Technology For Low RDS(ON) Performance Small Footprint Package (SC70−6 Equivalent) Esd Protected Gate Pb−Free Package is AvailableApplications Load/power Management Charging Circuits Load Switching Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJD4152PT1 ON Semiconductor - Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, Esd Protected SC-88Features Leading Trench Technology For Low RDS(ON) Performance Small Footprint Package (SC70−6 Equivalent) Esd Protected Gate Pb−Free Package is AvailableApplications Load/power Management Charging Circuits Load Switching Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJD4158C ON Semiconductor - Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 Features and Applications Features Leading 20V Trench for Low RDS(on) Performance ESD Protected Gate SC-88 Package for Small Footprint (2x2 mm) This isA Pb-Free Device Applications DC-DC Conversion Load/Power Management Load Switch Cell Phones, MP3s, Digital Cameras, PDAs
NTJD4158CT1G ON Semiconductor - Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 Features and Applications Features Leading 20V Trench for Low RDS(on) Performance ESD Protected Gate SC-88 Package for Small Footprint (2x2 mm) This isA Pb-Free Device Applications DC-DC Conversion Load/Power Management Load Switch Cell Phones, MP3s, Digital Cameras, PDAs
NTJD4401NT1 ON Semiconductor - Small Signal MOSFET 20 V, Dual N-Channel, SC-88 Esd Protection, Package: SC-88 (SOT-363), Pins=6
NTJD4401NT1G ON Semiconductor - Small Signal MOSFET 20 V, Dual N-Channel, SC-88 Esd Protection, Package: SC-88 (SOT-363), Pins=6
NTJS3151P ON Semiconductor - Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, SC88Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm, SC70−6 Equivalent) Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS3151PT1 ON Semiconductor - Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, SC88Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm, SC70−6 Equivalent) Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS3151PT1G ON Semiconductor - Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, SC88Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm, SC70−6 Equivalent) Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS4151P ON Semiconductor - Trench Power MOSFET -20 V, -4.2 A, P-Channel, SC-88 Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm) For Maximum Circuit BoardUtilization, Same as SC−70−6 Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS4151PT1 ON Semiconductor - Trench Power MOSFET -20 V, -4.2 A, P-Channel, SC-88 Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm) For Maximum Circuit BoardUtilization, Same as SC−70−6 Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS4160NT1G ON Semiconductor - Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88Power MOSFET 30 V, 3.2 A, Single N-Chan...
NTJS4405N ON Semiconductor - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTJS4405NT1 ON Semiconductor - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTJS4405NT1G ON Semiconductor - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTJS4405NT4 ON Semiconductor - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTJS4405NT4G ON Semiconductor - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTK3043N ON Semiconductor - Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723 Power MOSFET 20 V, 285...
NTK3043NT1G ON Semiconductor - Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723 Power MOSFET 20 V, 285...
NTK3142P ON Semiconductor - Small Signal Power MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723 Small S...
NTK3142PT1G ON Semiconductor - Small Signal Power MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723 Small S...
NTL4502N ON Semiconductor - Quad Power Mosfet 24 V, 15 A, N−channel, Pinpak-tm Package
NTL4502NT1 ON Semiconductor - Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAK-TM Package
NTLJF3117P ON Semiconductor - Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel, with 2.0A Schottky Barrier D...
NTLJF3117PT1G ON Semiconductor - Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel, with 2.0A Schottky Barrier D...
NTMD6P02R2 ON Semiconductor - Power MOSFET 6 Amps, 20 Volts, Package: Soic, Pins=8
NTMFS4108N ON Semiconductor - Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SO-8 Package Footprint. New Package Provides Capability of Inspection and Probe After Board Mounting Ultra Low RDS(on) (at 4.5 VGS, Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications High Speed Switching Capabiltiy Applications Notebook Computer Vcore Applications Network Applications DC-DC Converters
NTMFS4108NT1G ON Semiconductor - Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SO-8 Package Footprint. New Package Provides Capability of Inspection and Probe After Board Mounting Ultra Low RDS(on) (at 4.5 VGS, Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications High Speed Switching Capabiltiy Applications Notebook Computer Vcore Applications Network Applications DC-DC Converters
NTMFS4108NT3G ON Semiconductor - Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SO-8 Package Footprint. New Package Provides Capability of Inspection and Probe After Board Mounting Ultra Low RDS(on) (at 4.5 VGS, Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications High Speed Switching Capabiltiy Applications Notebook Computer Vcore Applications Network Applications DC-DC Converters
NTMFS4119N ON Semiconductor - Power MOSFET 30 V, 30 A, Single N-Channel SO-8 Flat Lead
NTMFS4120N ON Semiconductor - Power MOSFET 30 V, 31 A, Single N-Channel SO-8 Flat Lead
NTMFS4121N ON Semiconductor - Power MOSFET 30 V, 29 A, Single N-Channel SO-8 Flat Lead
NTMFS4122N ON Semiconductor - Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead
NTMFS4701N ON Semiconductor - Power MOSFET 30 V, 20 A, Single N-Channel, SO-8 Flat Lead Package
NTMFS4701NT1G ON Semiconductor - Power MOSFET 30 V, 20 A, Single N-Channel, SO-8 Flat Lead Package
NTMFS4701NT3G ON Semiconductor - Power MOSFET 30 V, 20 A, Single N-Channel, SO-8 Flat Lead Package
NTMFS4707N ON Semiconductor - Power MOSFET 30 V, 17 A, Single N-Channel SO-8 Flat LeadFeatures• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG• Optimized for Low Side Synchronous Applications• High Speed Switching CapabilityApplications• Notebook Computer Vcore Applications• Network Applications• DC−DC Converters
NTMFS4833N ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4833NT1G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4833NT3G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4834N ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4834NT1G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4834NT3G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4835N ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4835NT1G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4835NT3G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4836N ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4836NT1G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4836NT3G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4837N ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4837NT1G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4837NT3G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4839N ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4839NT1G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4839NT3G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4841N ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4841NT1G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4841NT3G ON Semiconductor - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTQD4154Z ON Semiconductor - Power MOSFET 20 V, 7.5A, Common-Drain, Dual N-channel TSSOP-8 Features Common Drain For Ease of Circuit Connection Low RDS(on) Extending Battery Life Esd Protected GateApplications Li−Ion Battery Protection Circuit Power Management in Portable and Battery−Powered Products
NTQD4154ZR2 ON Semiconductor - Power MOSFET 20 V, 7.5A, Common-Drain, Dual N-channel TSSOP-8 Features Common Drain For Ease of Circuit Connection Low RDS(on) Extending Battery Life Esd Protected GateApplications Li−Ion Battery Protection Circuit Power Management in Portable and Battery−Powered Products
NTQD6866R2 ON Semiconductor - Power MOSFET 6.9 Amps, 20 Volts N-channel TSSOP-8, Package: Tssop 8, Pins=8
NTQD6968 ON Semiconductor - Power MOSFET 6.6 Amps, 20 Volts
NTQD6968N ON Semiconductor - Power MOSFET 7.0 A, 20 V, Common Drain, Dual N−Channel, TSSOP−8
NTQD6968NR2 ON Semiconductor - Power MOSFET 7.0 A, 20 V, Common Drain, Dual N−Channel, TSSOP−8
NTQD6968R2 ON Semiconductor - Power Mosfet 6.6 Amps, 20 Volts
NUF2042XV6 ON Semiconductor - USB Upstream Terminator with ESD ProtectionProvides USB Line Termination, Filtering and ESD Protection Single IC Offers Cost Savings Bidirectional EMI Filtering Prevents Noise from Entering/Leaving the System Compliance with IEC61000-4-2 (Level 4), 8 kV (Contact) and 15 kV (Air) ESD Ratings: Machine Model=C and Human Body Model=3B These are Pb-Free devices
NUF2042XV6T1 ON Semiconductor - USB Upstream Terminator with ESD ProtectionProvides USB Line Termination, Filtering and ESD Protection Single IC Offers Cost Savings Bidirectional EMI Filtering Prevents Noise from Entering/Leaving the System Compliance with IEC61000-4-2 (Level 4), 8 kV (Contact) and 15 kV (Air) ESD Ratings: Machine Model=C and Human Body Model=3B These are Pb-Free devices
NUF2070MN ON Semiconductor - 2 Line Audio EMI Filter with ESD ProtectionNUF2070MN isA 2 line LC EMI filter array des...
NUF2070MNT1G ON Semiconductor - 2 Line Audio EMI Filter with ESD ProtectionNUF2070MN isA 2 line LC EMI filter array des...
NUF2101MT1 ON Semiconductor - Usb Filter With Esd Protection
NUF2114MN ON Semiconductor - 2 Line Audio EMI Filter with ESD ProtectionThis device isA 2 line audio EMI filter array designed for speaker applications. It offers greater than -30 dB attenuation at frequencies from 900 MHz to 3.0 GHz. This device also offers ESD protection-clamping transients from static discharges and ESD protection is provided across all capacitors. Features Provides EMI Filtering and ESD Protection Integration of 10 Discretes Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact) DFN8, 2x2 mm Package Moisture Sen
NUF2114MNT1G ON Semiconductor - 2 Line Audio EMI Filter with ESD ProtectionThis device isA 2 line audio EMI filter array designed for speaker applications. It offers greater than -30 dB attenuation at frequencies from 900 MHz to 3.0 GHz. This device also offers ESD protection-clamping transients from static discharges and ESD protection is provided across all capacitors. Features Provides EMI Filtering and ESD Protection Integration of 10 Discretes Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact) DFN8, 2x2 mm Package Moisture Sen
NUF2116 ON Semiconductor - 2 Line Audio EMI Filter with ESD ProtectionThis device isA 2 line audio EMI filter array designed for speaker applications. It offers greater than -35 dB attenuation at frequencies from 800 MHz to 3.0 GHz. This device also offers ESD protection-clamping transients from static discharges and ESD protection is provided across all capacitors. Features Provides EMI Filtering and ESD Protection Integration of 10 Discretes Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact) DFN8, 2x2 mm Package Moisture Sen
NUF2116MNT1G ON Semiconductor - 2 Line Audio EMI Filter with ESD ProtectionThis device isA 2 line audio EMI filter array designed for speaker applications. It offers greater than -35 dB attenuation at frequencies from 800 MHz to 3.0 GHz. This device also offers ESD protection-clamping transients from static discharges and ESD protection is provided across all capacitors. Features Provides EMI Filtering and ESD Protection Integration of 10 Discretes Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact) DFN8, 2x2 mm Package Moisture Sen
NUF2220 ON Semiconductor - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −20 dB attenuation is obtained at frequencies from800 MHz to 2.4 GHz. It also offers ESD protection−clampingtransients from static discharges. ESD protection is provided across allcapacitors.Features• EMI Filtering and ESD Protection• Integration of 10 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SOT−563 Package• Moisture Sensiti
NUF2220XV6T1 ON Semiconductor - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −20 dB attenuation is obtained at frequencies from800 MHz to 2.4 GHz. It also offers ESD protection−clampingtransients from static discharges. ESD protection is provided across allcapacitors.Features• EMI Filtering and ESD Protection• Integration of 10 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SOT−563 Package• Moisture Sensiti
NUF2221W1T2 ON Semiconductor - Usb Upstream Terminator With Esd Protection
NUF2222 ON Semiconductor - 2 Line USB 1.1 Upstream EMI FilterThis device isA 2 line EMI filter array for USB port protection in wireless applications. Greater than -20 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. It also has 2 lines for dedicated ESD protection. ESD protection is provided across all capacitors. Features and Applications Features EMI Filtering and ESD Protection Integration of 10 Discretes Provides Protection for IEC61000-4-2 (Level 4) 15 kV (Contact) Flip-Chip Package Moisture Sensitivity Level
NUF2222FCT1G ON Semiconductor - 2 Line USB 1.1 Upstream EMI FilterThis device isA 2 line EMI filter array for USB port protection in wireless applications. Greater than -20 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. It also has 2 lines for dedicated ESD protection. ESD protection is provided across all capacitors. Features and Applications Features EMI Filtering and ESD Protection Integration of 10 Discretes Provides Protection for IEC61000-4-2 (Level 4) 15 kV (Contact) Flip-Chip Package Moisture Sensitivity Level
NUF2230 ON Semiconductor - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −30 dB attenuation is obtained at frequencies from800 MHz to 900 MHz. It also offers ESD protection−clampingtransients from static discharges. ESD protection is provided across allcapacitors.Features• EMI Filtering and ESD Protection• Integration of 10 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SOT−563 Package• Moisture Sensiti
NUF2230XV6T1 ON Semiconductor - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −30 dB attenuation is obtained at frequencies from800 MHz to 900 MHz. It also offers ESD protection−clampingtransients from static discharges. ESD protection is provided across allcapacitors.Features• EMI Filtering and ESD Protection• Integration of 10 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SOT−563 Package• Moisture Sensiti
NUF2240 ON Semiconductor - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −20 dB attenuation is obtained at 800 MHz. It also offersESD protection−clamping transients from static discharges.ESD protection is provided across all capacitors.Features• EMI Filtering and ESD Protection• Integration of 11 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SC−88/SOT−363 Package• Moisture Sensitivity Level 1• E
NUF2240W1T1G ON Semiconductor - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −20 dB attenuation is obtained at 800 MHz. It also offersESD protection−clamping transients from static discharges.ESD protection is provided across all capacitors.Features• EMI Filtering and ESD Protection• Integration of 11 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SC−88/SOT−363 Package• Moisture Sensitivity Level 1• E
NUF2441 ON Semiconductor - Integrated Passive Filter with ESD ProtectionFeatures Provides EMI Filtering and ESD Protection Single IC Offers Cost Saving by Replacing 2 Inductors, 4 Capacitors, and 4 TVs diodes Compliance with IEC61000-4-2, (Level 4) 8kV (Contact), 15kV (air) Flip-Chip Package Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C, Human Body Model = 3B Pb-Free Solder Bumps
NUF2441FCT1 ON Semiconductor - Integrated Passive Filter with ESD ProtectionFeatures Provides EMI Filtering and ESD Protection Single IC Offers Cost Saving by Replacing 2 Inductors, 4 Capacitors, and 4 TVs diodes Compliance with IEC61000-4-2, (Level 4) 8kV (Contact), 15kV (air) Flip-Chip Package Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C, Human Body Model = 3B Pb-Free Solder Bumps
NUF2441FCT1G ON Semiconductor - Integrated Passive Filter with ESD ProtectionFeatures Provides EMI Filtering and ESD Protection Single IC Offers Cost Saving by Replacing 2 Inductors, 4 Capacitors, and 4 TVs diodes Compliance with IEC61000-4-2, (Level 4) 8kV (Contact), 15kV (air) Flip-Chip Package Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C, Human Body Model = 3B Pb-Free Solder Bumps
NUF3101 ON Semiconductor - Three Line EMI FilterThis device isA 3 line EMI filter array for SIM Card wirelessapplications. Greater than −25 dB attenuation is obtained atfrequencies from 800 MHz to 2.2 GHz. ESD protection is providedacross all capacitors.Features• EMI Filtering and ESD Protection• Pb−Free Package is Available*• Integration of 10 Discretes• Provides Protection for IEC61000−4−2 (Level 4)8.0 kV (Contact)15 kV (Air)• Flip−Chip Package• Moisture Sensitivity Level 1• ESD Rating: Machine Model
NUF3101FCT1 ON Semiconductor - Three Line EMI FilterThis device isA 3 line EMI filter array for SIM Card wirelessapplications. Greater than −25 dB attenuation is obtained atfrequencies from 800 MHz to 2.2 GHz. ESD protection is providedacross all capacitors.Features• EMI Filtering and ESD Protection• Pb−Free Package is Available*• Integration of 10 Discretes• Provides Protection for IEC61000−4−2 (Level 4)8.0 kV (Contact)15 kV (Air)• Flip−Chip Package• Moisture Sensitivity Level 1• ESD Rating: Machine Model
NUF3101FCT1G ON Semiconductor - Three Line EMI FilterThis device isA 3 line EMI filter array for SIM Card wirelessapplications. Greater than −25 dB attenuation is obtained atfrequencies from 800 MHz to 2.2 GHz. ESD protection is providedacross all capacitors.Features• EMI Filtering and ESD Protection• Pb−Free Package is Available*• Integration of 10 Discretes• Provides Protection for IEC61000−4−2 (Level 4)8.0 kV (Contact)15 kV (Air)• Flip−Chip Package• Moisture Sensitivity Level 1• ESD Rating: Machine Model
NUF4105FC ON Semiconductor - 4 Channel Emi Pi-filter Array With Esd Protection +4 Esd Diodes
NUF4105FCT1 ON Semiconductor - 4 Channel EMI Pi-Filter Array with ESD Protection +4 ESD Diodes
NUF4107FC ON Semiconductor - 4 Channel Emi Pi-filter Array With Full USB Filter
NUF4107FCT1G ON Semiconductor - 4 Channel EMI Pi-Filter Array with Full USB Filter
NUF4402 ON Semiconductor - 4 Line EMI Filter with ESD Protection
NUF6105FCT1 ON Semiconductor - 6 Channel Emi Pi-filter Array With Esd Protection
NUF6106 ON Semiconductor - 6 Channel Emi Pi-filter Array With Esd Protection This Device isA 6 Channel Emi Filter Array For Data Lines. Greaterthan −20 DB Attenuation is Obtained at Frequencies From 800 MHZ To2.2 Ghz. It Also Offers Esd Protection − Clamping Transients Fromstatic Discharges to Protect Delicate Data Line Circuitry.
NUF6106FCT1 ON Semiconductor - 6 Channel Emi Pi-filter Array With Esd Protection
NUF6401MN ON Semiconductor - Emi Filter With Esd Protection
NUF6401MNT1G ON Semiconductor - EMI Filter with ESD Protection
NUF6402 ON Semiconductor - 4 Line EMI Filter with ESD Protection DFN 1.35 x 3.0 mm PackageThis device is an EMI filter array for wireless applications. Greaterthan −30 dB attenuation is obtained at frequencies from 800 MHz to3.0 GHz. It also offers ESD protection clamping transients from staticdischarges. ESD protection is provided across all capacitors.Features• EMI Filtering and ESD Protection• Integration of 28 Discrete Components• DFN Package, 1.35 x 3.0 mm• Moisture Sensitivity Level 1• ESD Ratings: IEC61000−4−
NUF6402MNT1G ON Semiconductor - 4 Line EMI Filter with ESD Protection DFN 1.35 x 3.0 mm PackageThis device is an EMI filter array for wireless applications. Greaterthan −30 dB attenuation is obtained at frequencies from 800 MHz to3.0 GHz. It also offers ESD protection clamping transients from staticdischarges. ESD protection is provided across all capacitors.Features• EMI Filtering and ESD Protection• Integration of 28 Discrete Components• DFN Package, 1.35 x 3.0 mm• Moisture Sensitivity Level 1• ESD Ratings: IEC61000−4−
NUF8401 ON Semiconductor - Low Capacitance 8 Line EMI Filter with ESD Protection, 1.6 x 4.0 mm DFN Package
NUF8402 ON Semiconductor - 8 Line EMI Filter with ESD Protection 1.6 x 4.0 mm DFN PackageFeatures This device is an 8 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection-clamping transients from static discharges. ESD protection is provided across all capacitors.EMI Filtering and ESD Protection Integration of 24 Discrete Components Compliance with IEC61000-4-2 (Level 4) > 18.0 kV (Contact) DFN Package, 1.6 x 4.0 mm Moisture
NUF8402MN ON Semiconductor - 8 Line Emi Filter With Esd Protection
NUF8402MNT4G ON Semiconductor - 8 Line EMI Filter with ESD Protection
NUF9002 ON Semiconductor - Low Capacitance 10 Line EMI Filter with ESD ProtectionThis device isA 10 line EMI filter array for wireless applications. Greater than -25 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. ESD protection is provided across all capacitors.Features EMI Filtering and ESD Protection Integration of 50 Discretes Provides Protection for IEC61000-4-2(Level 4) 8.0 kV (Contact) Flip-Chip Package Moisture Sensitivity Level 1 ESD Rating: Machine Model=C; Human Body Model=3B Pb-Free Package is Availa
NUF9002FCT1 ON Semiconductor - Low Capacitance 10 Line EMI Filter with ESD ProtectionThis device isA 10 line EMI filter array for wireless applications. Greater than -25 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. ESD protection is provided across all capacitors.Features EMI Filtering and ESD Protection Integration of 50 Discretes Provides Protection for IEC61000-4-2(Level 4) 8.0 kV (Contact) Flip-Chip Package Moisture Sensitivity Level 1 ESD Rating: Machine Model=C; Human Body Model=3B Pb-Free Package is Availa
NUF9002FCT1G ON Semiconductor - Low Capacitance 10 Line EMI Filter with ESD ProtectionThis device isA 10 line EMI filter array for wireless applications. Greater than -25 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. ESD protection is provided across all capacitors.Features EMI Filtering and ESD Protection Integration of 50 Discretes Provides Protection for IEC61000-4-2(Level 4) 8.0 kV (Contact) Flip-Chip Package Moisture Sensitivity Level 1 ESD Rating: Machine Model=C; Human Body Model=3B Pb-Free Package is Availa
NUP1105L ON Semiconductor - Single Line CAN/LIN Bus Protector
NUP1105LT1 ON Semiconductor - Single Line CAN/LIN Bus Protector
NUP1105LT1G ON Semiconductor - Single Line Can/lin Bus Protector
NUP1105LT3 ON Semiconductor - Single Line CAN/LIN Bus Protector
NUP1105LT3G ON Semiconductor - Single Line CAN/LIN Bus Protector
NUP2105L ON Semiconductor - Dual Line Can Bus Protector
NUP2105LT1 ON Semiconductor - Dual Line CAN Bus Protector
NUP2105LT1G ON Semiconductor - Dual Line CAN Bus Protector
NUP2105LT3 ON Semiconductor - Dual Line CAN Bus Protector
NUP2105LT3G ON Semiconductor - Dual Line CAN Bus Protector
NUP2201MR6 ON Semiconductor - Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection
NUP2201MR6T1 ON Semiconductor - Low Capacitance Tsop-6 Diode-tvs Array For High Speed Data Lines Protection
NUP2201MR6T1G ON Semiconductor - Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection
NUP2202W1 ON Semiconductor - Low Capacitance SC-88 Diode-TVS Array for HIGH Speed Data Lines Protection
NUP2202W1T2G ON Semiconductor - Low Capacitance SC-88 Diode-TVS Array for HIGH Speed Data Lines Protection
NUP2301MW6T1 ON Semiconductor - Low Capacitance Diode Array for ESD Protection in Two Data Lines
NUP2301MW6T1D ON Semiconductor - Low Capacitance Diode Array for ESD Protection in Two Data Lines
NUP2301MW6T1G ON Semiconductor - Low Capacitance Diode Array For Esd Protection In Two Data Lines
NUP4102 ON Semiconductor - Bi-Directional Quad (Clipper) This 6-Pin Bi-Directional transient suppressor array is designed for applications requiring transient overvoltage protection capability. It is intended for use in transient voltage and ESD sensitive equipment such as computers, printers, cell phones, medical equipment, and other applications. Its integrated design provides bi-directional protection for four separate lines usingA single SOT-563 package. This device is ideal for situations where board space isA premium.
NUP4102XV6T1 ON Semiconductor - Bi-Directional Quad (Clipper) This 6-Pin Bi-Directional transient suppressor array is designed for applications requiring transient overvoltage protection capability. It is intended for use in transient voltage and ESD sensitive equipment such as computers, printers, cell phones, medical equipment, and other applications. Its integrated design provides bi-directional protection for four separate lines usingA single SOT-563 package. This device is ideal for situations where board space isA premium.
NUP4201DR2 ON Semiconductor - Low Capacitance Surface Mount Tvs For High-speed Data Interfaces
NUP4201MR6 ON Semiconductor - Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection
NUP4201MR6T1 ON Semiconductor - Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection
NUP4201MR6T1G ON Semiconductor - Low Capacitance Tsop-6 Diode-tvs Array For High Speed Data Lines Protection
NUP4301MR6T1 ON Semiconductor - Low Capacitance Diode Array For Esd Protection In Four Data Lines
NUP4302MR6 ON Semiconductor - Schottky Diode Array For Four Data Line Esd Protection
NUP4302MR6T1 ON Semiconductor - Schottky Diode Array for Four Data Line ESD Protection
NUP5120X6 ON Semiconductor - Unidirectional TVS Array For High-speed Data Line Protection, Package: Micro-8, Pins=8
NUP5120X6T1 ON Semiconductor - 5-Line Transient Voltage Suppressor Array This 5-line Voltage Transient Supp...
NUP6101DMR2 ON Semiconductor - Unidirectional Tvs Array For High-speed Data Line Protection
NUP8010MN ON Semiconductor - 8 Line Low Capacitance Transient Voltage Suppressor DFN8 1.6x1.6mm This integrated trans...
NUP8010MNT1G ON Semiconductor - 8 Line Low Capacitance Transient Voltage Suppressor DFN8 1.6x1.6mm This integrated trans...
NUR30Q ON Semiconductor - Quad Schottky Barrier Diodes Array
NUR30QW5T1 ON Semiconductor - Quad Schottky Barrier Diodes Array
NUS1204MN ON Semiconductor - Overvoltage Protection IC with Integrated MOSFETThis device representsA new level of safety and integration by combining the NCP304 overvoltage protection circuit (OVP) withA -12V P-Channel Power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before damage can occur. The OVP IC is optimized for applications us
NUS1204MNT1G ON Semiconductor - Overvoltage Protection IC with Integrated MOSFETThis device representsA new level of safety and integration by combining the NCP304 overvoltage protection circuit (OVP) withA -12V P-Channel Power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before damage can occur. The OVP IC is optimized for applications us
NUS2045 ON Semiconductor - Overvoltage Protection IC with Integrated MOSFET These devices representA new level of safety and integration by combining the NCP345 overvoltage protection (OVP) withA 20V P-Channel Power MOSFET (NUS2045MN) or withA 30V P-Channel Power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before any
NUS2045MNT1G ON Semiconductor - Overvoltage Protection IC with Integrated MOSFET These devices representA new level of safety and integration by combining the NCP345 overvoltage protection (OVP) withA 20V P-Channel Power MOSFET (NUS2045MN) or withA 30V P-Channel Power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before any
NUS2401SNT1 ON Semiconductor - Integrated PNP/NPN Digital Transistors Array
NUS2401SNT1G ON Semiconductor - Integrated Pnp/npn Digital Transistors Array
NUS2501W6 ON Semiconductor - Integrated Npn Digital Transistor With Switching Transistor With Switching
NUS2501W6T1 ON Semiconductor - Integrated NPN Digital Transistor with Switching Transistor with Switching
NUS3045 ON Semiconductor - Integrated Overvoltage Protection IC with Integrated 30V P-Channel MOSFETThese devices representA new level of safety and integration by combining the NCP345 overvoltage protection (OVP) withA 20V P-Channel Power MOSFET (NUS2045MN) or withA 30V P-Channel Power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus prote
NUS3045MNT1G ON Semiconductor - Integrated Overvoltage Protection IC with Integrated 30V P-Channel MOSFETThese devices representA new level of safety and integration by combining the NCP345 overvoltage protection (OVP) withA 20V P-Channel Power MOSFET (NUS2045MN) or withA 30V P-Channel Power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus prote
NUS5530MN ON Semiconductor - Integrated Power MOSFET with PNP Low VCE(sat) Switching TransistorThis integrated device representsA new level of safety and board-space reduction by combining the 20V P-Channel withA PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
NUS5530MNR2G ON Semiconductor - Integrated Power MOSFET with PNP Low VCE(sat) Switching TransistorThis integrated device representsA new level of safety and board-space reduction by combining the 20V P-Channel withA PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
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