PAL22V10Z-25C TI - Epice Cmos Programmable Array Logic Circuits
PAL22V10Z-25CJTL TI - EPICE CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
PAL22V10Z-30I TI - EPICE CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
PALADIN20 PMC-Sierra - The PALADIN family of digital multicarrier chip technologies enables the development of spectrally efficient and power efficient 3G and WiMAX base stations that use fewer and less expensive components than traditional feedforward designs. The PALADIN products, which include the PM7800 PALADIN 10, PM7815 PALADIN 15, PM7820 PALADIN 20, and the PM7819 PALADIN WAVESHAPER, make extensive use of proprietary advanced high-speed DSP-based architectures and techniques.The PM7820 PALADIN 20 device inhibits distortion
PBSS2515E Philips - 15 V, 0.5A NPN low VCEsat (BISS) transistor NPN low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E. FeaturesLow collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors ApplicationsDC-to-DC conversion MOSFET gate driving Motor co
PBSS2540E Philips - 40 V, 500 mA NPN low VCEsat (BISS) transistorNPN low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E. FeaturesLow collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors ApplicationsDC-to-DC conversion MOSFET gate driving Motor con
PBSS301ND Philips - 20 V, 4A NPN low VCEsat (BISS) transistorNPN low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD. FeaturesVery low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4A continuous collector current Up to 15A peak current High efficiency due to less heat generation ApplicationsPower management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) T
PBSS301PD Philips - 20 V, 4A PNP low VCEsat (BISS) transistorPNP low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT457 (SC-74) SMD plastic package. NPN complement: PBSS301ND. FeaturesVery low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4A continuous collector current Up to 15A peak current High efficiency due to less heat generation ApplicationsPower management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) T
PBSS302ND Philips - 40V NPN low VCEsat (BISS) transistor NPN low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT457 (SC-74) SMD plastic package. PNP complement: PBSS302PD. FeaturesUltra low collector-emitter saturation voltage VCEsat 4A continuous collector current capability IC (DC) Up to 15A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation ApplicationsPower management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches
PBSS302PD Philips - 40V PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor inA SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND FeaturesUltra low collector-emitter saturation voltage VCEsat 4A continuous collector current capability IC (DC) Up to 15A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation ApplicationsPower management functions Charging circuits DC-to-DC conversion MOSFET gate driv
PBSS303PD Philips - 60 V, 3A PNP low VCEsat (BISS) transistorGeneral descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor inA SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303ND.Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tran
PBSS304ND National Semiconductor - 80 V, 3A NPN low VCEsat (BISS) transistorNPN low VCEsat Breakthrough In Small Signal (BISS) transistor inA SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PD.
PBSS304PD Philips - 80 V, 3A PNP low VCEsat (BISS) transistorGeneral descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor inA SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tran
PBSS305ND National Semiconductor - 100 V, 3A NPN low VCEsat (BISS) transistorNPN low VCEsat Breakthrough In Small Signal (BISS) transistor inA SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PD.
PBSS305PD Philips - 100 V, 2A PNP low VCEsat (BISS) transistoreneral descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor inA SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS305ND.Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tran
PBSS3515E Philips - 15 V, 0.5A PNP low VCEsat (BISS) transistorPNP low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2515E. FeaturesLow collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors ApplicationsDC-to-DC conversion MOSFET gate driving Motor con
PBSS3540E Philips - 40 V, 500 mA PNP low VCEsat (BISS) transistorPNP low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. FeaturesLow collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors ApplicationsDC-to-DC conversion MOSFET gate driving Motor c
PBSS4160DPN Philips - 60 V, 1A Npn/pnp Low Vcesat (BISS) Transistor NPN/PNP Low Vcesat (BISS) Transistor PaIR inA SOT457 (SC-74) Plastic Package. Features Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability ic and Icm High Efficiency, Reduces Heat Generation Reduces Printed-circuit Board Area Required. Applications Power Management DC-to-DC Conversion Supply Line Switching Peripheral Driver Inductive Load Drivers (e.g. Relays, Buzzers and Motors) Driver in Low Supply Voltage Applications (e.g
PBSS4160V Philips - 60 V, 1A NPN Low Vcesat (BISS) Transistorlow Vcesat (BISS) NPN Transistor inA SOT666 Plastic Package. Features Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability ic and Icm High Efficiency, Reduces Heat Generation Reduces Printed-circuit Board Area Required Cost Effective Replacement For Medium Power Transistor BCP55 and BCX55. Applications Major Application Segments: Automotive 42V Power Telecom Infrastructure Industrial. Power Management: DC-to-DC Conversion Supply Line
PBSS4220V Philips - 20 V, 2A NPN low VCEsat (BISS) transistorGeneral descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor inA SOT666 Surface Mounted Device (SMD) plastic package.PNP complement: PBSS5220V.Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistorsAppli
PBSS4420D Philips - 20 V, 4A NPN low VCEsat (BISS) transistorNPN low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5420D. FeaturesVery low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4A continuous collector current Up to 15A peak current High efficiency due to less heat generation ApplicationsPower management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) T
PBSS4440D Philips - 40V NPN low VCEsat (BISS) transistorNPN low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D. FeaturesUltra low collector-emitter saturation voltage VCEsat 4A continuous collector current capability IC (DC) Up to 15A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation ApplicationsPower management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches
PBSS5160K Philips - 60 V, 1A PNP Low Vcesat (BISS) Transistor PNP Low Vcesat (BISS) Transistor inA SOT346 (SC-59) Plastic Package.npn Complement: PBSS4160K. Features Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability ic and Icm High Efficiency Leading to Less Heat Generation Reduces Printed-circuit Board Area Required Cost-effective Replacement of Medium Power Transistors BCP52 and BCX52. Applications Major Application Segments: Automotive Telecom Infrastructure Industrial. Power Management:
PBSS5220T Philips - 30 V; 1A PNP Low V_cesat (BISS) Transistorfeatures Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability: ic and Icm Higher Efficiency Leading to Less Heat Generation Reduced Printed-circuit Board Requirements Cost Effective Alternative to MOSFETs in Specific Applications. Applications Power Management DC/DC Converters Supply Line Switching Battery Charger LCD Backlighting. Peripheral Drivers Driver in Low Supply Voltage Applications (e.g. Lamps and LEDs) Inductive Load Driver
PBSS5220V Philips - 20 V, 2A PNP low VCEsat (BISS) transistorPNP low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT666 Surface Mounted Device (SMD) plastic package. FeaturesLow collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors ApplicationsDC-to-DC conversion MOSFET gate driving Motor control Chargin
PBSS5420D Philips - 20 V, 4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4420D. FeaturesVery low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4A continuous collector current Up to 15A peak current High efficiency leading to less heat generation ApplicationsPower management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, f
PBSS5440D Philips - 40V PNP low VCEsat (BISS) transistorPNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor inA SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4440D FeaturesUltra low collector-emitter saturation voltage VCEsat 4A continuous collector current capability IC (DC) Up to 15A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation ApplicationsPower management functions Charging circuits DC-to-DC conversion MOSFET gate drivi
PBSS8110AS Philips - 100 V, 1A NPN Low V_cesat (BISS) Transistorfeatures SOT54 Package Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability: ic and Icm Higher Efficiency Leading to Less Heat Generation. Applications Automotive 42V Power Telecom Infrastructure General Industrial Applications Power Management DC/DC Converters Supply Line Switching Battery Charger LCD Backlighting. Peripheral Drivers Generic Driver (e.g. Lamps and LEDs) Inductive Load Driver (e.g. Relays, Buzzers and Motors).
PBSS8110X Philips - 100 V, 1A NPN low VCEsat (BISS) transistorNPN low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X. FeaturesSOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation ApplicationsMajor application segments: Automotive 42V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lam
PBSS9110S Philips - 100 V, 1A PNP Low Vcesat (BISS) Transistor PNP Low Vcesat Transistor inA SOT54 (SC-43/TO-92) Plastic Package. Features SOT54 Package Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability ic and Icm High Efficiency Leading to Less Heat Generation. Applications Major Application Segments: Automotive 42V Power Telecom Infrastructure Industrial. Peripheral Driver: Driver in Low Supply Voltage Applications (e.g. Lamps and LEDs) Inductive Load Driver (e.g. Relays, Buzzers and Mo
PBSS9110X Philips - 100 V, 1A PNP low VCEsat (BISS) transistorPNP low VCEsat Breakthrough in Small Signal (BISS) transistor inA SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X. FeaturesSOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation ApplicationsMajor application segments: Automotive 42V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamp
PBSS9110Z Philips - 100 V, 1A PNP Low Vcesat (BISS) Transistorpnp Low Vcesat Transistor inA SOT223 (SC-73) Plastic Package. Features SOT223 Package Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability ic and Icm High Efficiency Leading to Less Heat Generation. Applications Major Application Segments: Automotive 42V Power Telecom Infrastructure Industrial. Peripheral Driver: Driver in Low Supply Voltage Applications (e.g. Lamps and LEDs) Inductive Load Driver (e.g. Relays, Buzzers and Motors)
PC100-222-620 Siemens - 3.3v 2m X 64/72-bit 1 Bank Sdram Module 3.3v 4m X 64/72-bit 2 Bank Sdram Module
PC100-222-620 Siemens - 3.3V 8m X 64/72-bit 1 Bank Sdram Module 3.3V 16m X 64/72-bit 2 Bank Sdram Module
PC100-222-620 Siemens - 3.3V 16m X 64/72-bit Sdram Modules 3.3V 32m X 64/72-bit Sdram Modules 3.3V 64m X 64/72-bit Sdram Modules
PC1002-A Powertip - Model = PC 1002-A ; Module Size(w X L Mm) = 84.0 X 44.0 ; View Area(w X L Mm) = 60.5 X 18.5 ; Dot Size(w X L Mm) = 0.40 X 0.45 ; Character Size(w X L Mm) = 4.80 X 5.84
PC100-323-620 Siemens - 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
PC100-323-620 Siemens - 3.3V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3V 16M x 64/72-Bit 2 Bank SDRAM Module
PC100-323-620 Siemens - 3.3V 16M x 64/72-Bit SDRAM Modules 3.3V 32M x 64/72-Bit SDRAM Modules 3.3V 64M x 64/72-Bit SDRAM Modules
PC1601-E Powertip - Model = PC 1601-E ; Module Size(w X L Mm) = 80.0 X 36.0 ; View Area(w X L Mm) = 65.0 X 16.0 ; Dot Size(w X L Mm) = 0.55 X 0.75 ; Character Size(w X L Mm) = 3.07x 6.56
PC1601-G Powertip - Model = PC 1601-G ; Module Size(w X L Mm) = 80.0 X 36.0 ; View Area(w X L Mm) = 65.0 X 16.0 ; Dot Size(w X L Mm) = 0.55 X 0.75 ; Character Size(w X L Mm) = 3.07x 6.56
PC1601-K Powertip - Model = PC 1601-K ; Module Size(w X L Mm) = 72.0 X 26.4 ; View Area(w X L Mm) = 65.5 X 15.0 ; Dot Size(w X L Mm) = 0.55 X 0.75 ; Character Size(w X L Mm) = 3.07x 6.56
PC2002-E Powertip - Model = PC 2002-E ; Module Size(w X L Mm) = 98.0 X 60.0 ; View Area(w X L Mm) = 85.0 X 18.6 ; Dot Size(w X L Mm) = 0.60 X 0.65 ; Character Size(w X L Mm) = 3.20 X 5.55
PC2004-C-P1 Powertip - Model = PC 2004-C-P1 ; Module Size(w X L Mm) = 93.0 X 47.0 ; View Area(w X L Mm) = 60.0 X 22.0 ; Dot Size(w X L Mm) = 0.42 X 0.46 ; Character Size(w X L Mm) = 2.30 X 4.03
PC2004-D Powertip - Model = PC 2004-D ; Module Size(w X L Mm) = 65.0 X 28.4 ; View Area(w X L Mm) = 46.0 X 18.4 ; Dot Size(w X L Mm) = 0.33 X 0.35 ; Character Size(w X L Mm) = 1.85 X 3.15
PC2004-G Powertip - Model = PC 2004-G ; Module Size(w X L Mm) = 86.0 X 36.6 ; View Area(w X L Mm) = 79.0 X 27.0 ; Dot Size(w X L Mm) = 0.55 X 0.55 ; Character Size(w X L Mm) = 2.95 X 4.75
PC2004LRS-BSO-B Powertip - Display Devices For Better Elecyronoc Design
PC2402-F Powertip - Model = PC 2402-F ; Module Size(w X L Mm) = 98.16 X 32.5 ; View Area(w X L Mm) = 93.5 X 15.8 ; Dot Size(w X L Mm) = 0.60 X 0.65 ; Character Size(w X L Mm) = 3.20 X 5.55
PC2402-H Powertip - Model = PC 2402-H ; Module Size(w X L Mm) = 100.16 X 26.4 ; View Area(w X L Mm) = 93.5 X 15.8 ; Dot Size(w X L Mm) = 0.60 X 0.65 ; Character Size(w X L Mm) = 3.20 X 5.55
PC2404-A Powertip - Model = PC 2404-A ; Module Size(w X L Mm) = 125.0 X 39.0 ; View Area(w X L Mm) = 97.0 X 27.0 ; Dot Size(w X L Mm) = 0.60 X 0.65 ; Character Size(w X L Mm) = 3.20 X 5.55
PC2880FET180 Philips - General descriptionThe LPC2880/LPC2888 are an ARM7-based microcontroller for portable applications requiring low power and high performance. It includesA USB 2.0 Hi-Speed device interface, an external memory interface that can interface to SDRAM and flash, an SD/MMC memory card interface, A/D and D/A converters, and serial interfaces including UART, I2C-bus, and I2S-bus. Architectural enhancements like multi-channel DMA, processor cache, simultaneous operations on multiple internal buses, and flexible cloc