BLC6G22-130 (Philips) - UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 30 W (AV) Gain =16 dB Efficiency = 31 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD p, LDMOS

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BLC6G22-130 (Philips)

Electronic component documentation (datasheet) «BLC6G22-130» (LDMOS), manufacturer Philips. Download datasheet file:

Datasheet BLC6G22-130 manufacturer Philips

Partname	BLC6G22-130
Description	UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 30 W (AV) Gain =16 dB Efficiency = 31 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD p
Functional	LDMOS
Manufacturer	Philips Semiconductors
Site	www.semiconductors.philips.com

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BLC6G22-130, BLC6G22LS-130

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