BLF4G20LS-110B (Philips) - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 650 mA: Load power = 48 W (AV) Gain = 13.8 dB (typ) Efficiency = 38.5 pct. (typ) ACPR400 = -61 dBc (typ) ACPR600 = -74 dBc (typ) EVMrms = 2.1 pct., LDMOS

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BLF4G20LS-110B (Philips)

Electronic component documentation (datasheet) «BLF4G20LS-110B» (LDMOS), manufacturer Philips. Download datasheet file:

Datasheet BLF4G20LS-110B manufacturer Philips

Partname	BLF4G20LS-110B
Description	UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 650 mA: Load power = 48 W (AV) Gain = 13.8 dB (typ) Efficiency = 38.5 pct. (typ) ACPR400 = -61 dBc (typ) ACPR600 = -74 dBc (typ) EVMrms = 2.1 pct.
Functional	LDMOS
Manufacturer	Philips Semiconductors
Site	www.semiconductors.philips.com

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BLF4G20LS-110B, BLF4G22-100, BLF4G22S-100

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