K4H280838F - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
K4H280838F-TC/LB3 - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
K4H280838F-UC/LA2 - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
K4H280838F-UC/LB0 - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
K4H2G0638A - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H2G0638A-UC/LCC - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510438B-G(Z)C/LCC,B3,A2,B0 - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510438B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510438C - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510438C-UC(L)/B3,A2,B0 - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510638B - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638B-TCA0 - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638B-TCA2 - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638B-TCB0 - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638C - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638C-TCA0 - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638C-TCA2 - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638C-TCB0 - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638C-TCB3 - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638D - K4H510638D The Data Sheet You Have Searched is Under Preparation. ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638E - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638E-TC/LA2 - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638E-TC/LAA - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638E-TC/LB0 - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510838B-G(Z)C/LCC,B3,A2,B0 - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510838C-UC(L)/CC,B3,A2,B0 - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510838C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510838D - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510838D-UC/LCC,B3,A2,B0 - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H511638B-G(Z)C/LCC,B3,A2,B0 - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H511638C - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H511638C-UC(L)/CC,B3,A2,B0 - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H511638D-UC/LCC,B3,A2,B0 - DDR SDRAM 512Mb D-die (x8, x16)The K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.