K4M563233D-MEE/N/I/P - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4M563233D-MEE/N/I/P1L - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4M563233D-MEE/N/I/P80 - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4M563233E - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
K4M563233E-C - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-E - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-F1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-F1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-F75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-F80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-G - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-M - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E-N - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LD - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4M56323LD-MEG/S - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4M56323LD-MEG/S1H - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4M56323LD-MEG/S1L - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4M56323LD-MEG/S80 - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4M56323LE - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
K4M56323LE-EC1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EC1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EC80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EE1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EE1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EE80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EL1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EL1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EL80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EN1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EN1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EN80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ER1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ER1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ER80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ES1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ES1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ES80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MC1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MC1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MC80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ME1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ME1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ME80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ML1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ML1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-ML80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MN1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MN1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MN80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MR1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MR1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MR80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MS1H - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MS1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-MS80 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323PG-F - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323PG-F - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M64163PH - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
K4M64163PH-R(B)G/F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M64163PH-R(B)G/F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M64163PH-R(B)G/F90 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4P160411C - K4P160411C 4M X 4Bit CMOS Quad Cas DRAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page Q/c ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
K4P170411C - K4P170411C 4M X 4Bit CMOS Quad Cas DRAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page Q/c ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
K4Q160411C - K4Q160411C 4 X 4Bit CMOS Quad Cas DRAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo Q/c ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
K4Q170411C - K4Q170411C 4M X 4Bit CMOS Quad Cas DRAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo Q/c ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 24SOJ,26SOJ,24TSOP2,26TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
K4R271669A - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669AM-CG6 - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669AM-CK7 - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669AM-CK8 - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669AN-CG6 - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669AN-CK7 - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669AN-CK8 - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669A-SbCK8 - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669A-SCxx - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
K4R271669B - 256k X 16/18 Bit X 32s Banks Direct Rdramtm
K4R271669B-MCG6 - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
K4R271669B-MCK7 - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
K4R271669B-MCK8 - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
K4S1G0632D - st.32M x 4Bit x 4 Banks SDRAMThe K4S1G0632D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 67,108,864 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S1G0632D-UC75 - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S1G0632MT - K4S1G0632MT 64M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 256Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S1G0732D - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S1G0732D-UC75 - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S280432A - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
K4S280432A-TC/L10 - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432A-TC/L1H - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432A-TC/L1L - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432A-TC/L75 - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432A-TC/L80 - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432B - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
K4S280432B-TC/L10 - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432B-TC/L1H - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432B-TC/L1L - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432B-TC/L75 - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432B-TC/L80 - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
K4S280432C - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
K4S280432C-TC/L1H - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
K4S280432C-TC/L1L - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
K4S280432C-TC/L75 - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
K4S280432D - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
K4S280432D-TB1H - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
K4S280432D-TB1L - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
K4S280432D-TB75 - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
K4S280432D-TB7C - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
K4S280432D-TC/L1H - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
K4S280432D-TC/L1L - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
K4S280432D-TC/L75 - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
K4S280432D-TC/L7C - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
K4S281632M - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-L10 - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
K4S281632M-L1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-L1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-L80 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TC - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TC10 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TC1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TC1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TC80 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TC/L10 - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
K4S281632M-TC/L1H - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
K4S281632M-TC/L1L - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
K4S281632M-TC/L80 - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
K4S281632M-TL - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TL10 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TL1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TL1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M-TL80 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281633D - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
K4S281633D-RBL/N/P - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
K4S281633D-RBL/N/P1H - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
K4S281633D-RBL/N/P75 - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
K4S28163LD - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S28163LD-RBL/N/P - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S28163LD-RBL/N/P15 - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S28163LD-RBL/N/P1H - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S28163LD-RBL/N/P1L - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S28163LD-RBL/N/P75 - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S283232E - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S283232E-T - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S283232E-TC/L1L100MHzCL3 - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S283232E-TC/L60166MHzCL3 - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S283233F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-C - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-EE/N/I/P1H - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S283233F-EE/N/I/P1L - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S283233F-EE/N/I/P75 - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -