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Electronic components list Samsung, page 8



  1. Samsung semiconductor

    Site: www.samsung.com
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    Manufacturers


    K4S641632D-TC/L60 - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  2. K4S641632D-TC/L70 - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  3. K4S641632D-TC/L75 - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  4. K4S641632D-TC/L80 - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  5. K4S641632E - 64Mbit SDRAM
  6. K4S641632E-TC1H - 64Mbit SDRAM
  7. K4S641632E-TC1H/TL1H - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  8. K4S641632E-TC1L - 64Mbit SDRAM
  9. K4S641632E-TC1L/TL1L - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  10. K4S641632E-TC50 - 64Mbit SDRAM
  11. K4S641632E-TC50/TL50 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  12. K4S641632E-TC55 - 64Mbit SDRAM
  13. K4S641632E-TC55/TL55 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  14. K4S641632E-TC60 - 64mbit Sdram
  15. K4S641632E-TC60/TL60 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  16. K4S641632E-TC70 - 64Mbit SDRAM
  17. K4S641632E-TC70/TL70 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  18. K4S641632E-TC75 - 64Mbit SDRAM
  19. K4S641632E-TC75/TL75 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  20. K4S641632E-TC/L1H - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  21. K4S641632E-TC/L1L - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  22. K4S641632E-TC/L55 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  23. K4S641632E-TC/L60 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  24. K4S641632E-TC/L70 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  25. K4S641632E-TC/L75 - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  26. K4S641632E-TL1H - 64Mbit SDRAM
  27. K4S641632E-TL1L - 64Mbit SDRAM
  28. K4S641632E-TL50 - 64Mbit SDRAM
  29. K4S641632E-TL55 - 64Mbit SDRAM
  30. K4S641632E-TL60 - 64Mbit SDRAM
  31. K4S641632E-TL70 - 64Mbit SDRAM
  32. K4S641632E-TL75 - 64Mbit SDRAM
  33. K4S641632F - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  34. K4S641632F-TC1H - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous Dram Lvttl
  35. K4S641632F-TC1H/TL1H - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous DRAM LVTTL
  36. K4S641632F-TC1L - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  37. K4S641632F-TC1L/TL1L - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous DRAM LVTTL
  38. K4S641632F-TC50 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  39. K4S641632F-TC50/TL50 - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  40. K4S641632F-TC55 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  41. K4S641632F-TC55/TL55 - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  42. K4S641632F-TC60 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  43. K4S641632F-TC60/TL60 - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  44. K4S641632F-TC70 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  45. K4S641632F-TC70/TL70 - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  46. K4S641632F-TC75 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  47. K4S641632F-TC75/TL75 - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  48. K4S641632F-TL1H - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  49. K4S641632F-TL1L - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  50. K4S641632F-TL50 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  51. K4S641632F-TL55 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  52. K4S641632F-TL60 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  53. K4S641632F-TL70 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  54. K4S641632F-TL75 - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  55. K4S641632H - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  56. K4S641632H-TC60 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  57. K4S641632H-TC70 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  58. K4S641632H-TC75 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  59. K4S641632H-TCL60 - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  60. K4S641632H-TCL70 - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  61. K4S641632H-TCL75 - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  62. K4S641632H-TL60 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  63. K4S641632H-TL70 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  64. K4S641632H-TL75 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  65. K4S641632H-UC60 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  66. K4S641632H-UC70 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  67. K4S641632H-UC75 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  68. K4S641632H-UL60 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  69. K4S641632H-UL70 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  70. K4S641632H-UL75 - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  71. K4S641633D - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  72. K4S641633D-G - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  73. K4S641633D-GC/L1H - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  74. K4S641633D-GC/L1L - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  75. K4S641633D-GE/N1H - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  76. K4S641633D-GE/N1L - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  77. K4S641633F - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  78. K4S641633F-GAL/N/P - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  79. K4S641633F-GAL/N/P1H - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  80. K4S641633F-GAL/N/P1L - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  81. K4S641633F-GAL/N/P75 - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  82. K4S641633H - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  83. K4S641633H-C - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  84. K4S641633H-F1H - 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
  85. K4S641633H-F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  86. K4S641633H-F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  87. K4S641633H-G - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  88. K4S641633H-L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  89. K4S641633H-N - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  90. K4S641633H-R - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  91. K4S641633H-R(B)E/N/G/C/L/F1H - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  92. K4S641633H-R(B)E/N/G/C/L/F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  93. K4S641633H-R(B)E/N/G/C/L/F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  94. K4S641633H-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  95. K4S641633H-RE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  96. K4S64163LF - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  97. K4S64163LF-GAF/R - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  98. K4S64163LF-GAF/R15 - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  99. K4S64163LF-GAF/R1H - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  100. K4S64163LF-GAF/R1L - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  101. K4S64163LF-GAF/R75 - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  102. K4S64163LH - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  103. K4S64163LH-C - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  104. K4S64163LH-F1H - 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
  105. K4S64163LH-F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  106. K4S64163LH-F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  107. K4S64163LH-G - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  108. K4S64163LH-L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  109. K4S64163LH-N - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  110. K4S64163LH-R(B)E/N/G/C/L/F1H - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  111. K4S64163LH-R(B)E/N/G/C/L/F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  112. K4S64163LH-R(B)E/N/G/C/L/F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  113. K4S64163LH-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  114. K4S64163LH-RE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  115. K4S643232C - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  116. K4S643232C-TC10 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  117. K4S643232C-TC55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  118. K4S643232C-TC60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  119. K4S643232C-TC70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  120. K4S643232C-TC80 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  121. K4S643232C-TC/L10 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  122. K4S643232C-TC/L55 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  123. K4S643232C-TC/L60 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  124. K4S643232C-TC/L70 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  125. K4S643232C-TC/L80 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  126. K4S643232C-TL10 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  127. K4S643232C-TL55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  128. K4S643232C-TL60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  129. K4S643232C-TL70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  130. K4S643232C-TL80 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  131. K4S643232E - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl(3.3v)
  132. K4S643232E - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  133. K4S643232E-TC45 - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  134. K4S643232E-TC50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  135. K4S643232E-TC55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  136. K4S643232E-TC60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  137. K4S643232E-TC70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  138. K4S643232E-TC/L45 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  139. K4S643232E-TC/L50 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  140. K4S643232E-TC/L55 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  141. K4S643232E-TC/L60 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  142. K4S643232E-TC/L70 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  143. K4S643232E-TE50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  144. K4S643232E-TE60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  145. K4S643232E-TE70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  146. K4S643232E-TI - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  147. K4S643232E-TI60 - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous DRAM LVTTL (3.3v)
  148. K4S643232E-TI70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  149. K4S643232E-TL45 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  150. K4S643232E-TL50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  151. K4S643232E-TL55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  152. K4S643232E-TL60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  153. K4S643232E-TL70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  154. K4S643232E-TN50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  155. K4S643232E-TN60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  156. K4S643232E-TN70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  157. K4S643232E-TP60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  158. K4S643232E-TP70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  159. K4S643232F - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  160. K4S643232F- - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl3.3v
  161. K4S643232F-TC45 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  162. K4S643232F-TC50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  163. K4S643232F-TC55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  164. K4S643232F-TC60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  165. K4S643232F-TC70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  166. K4S643232F-TC/L45 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  167. K4S643232F-TC/L50 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  168. K4S643232F-TC/L55 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  169. K4S643232F-TC/L60 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  170. K4S643232F-TC/L70 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  171. K4S643232F-TI60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  172. K4S643232F-TI70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  173. K4S643232F-TL45 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  174. K4S643232F-TL50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  175. K4S643232F-TL55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  176. K4S643232F-TL60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  177. K4S643232F-TL70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  178. K4S643232F-TP60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  179. K4S643232F-TP70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  180. K4S643232H - 64mb H-die (x32) Sdram Specification
  181. K4S643232H-TC50 - 64Mb H-die (x32) SDRAM Specification
  182. K4S643232H-TC50 - 64mb H-die (x32) Sdram Specification
  183. K4S643232H-TC55 - 64Mb H-die (x32) SDRAM Specification
  184. K4S643232H-TC55 - 64Mb H-die (x32) SDRAM Specification
  185. K4S643232H-TC60 - 64Mb H-die (x32) SDRAM Specification
  186. K4S643232H-TC60 - 64Mb H-die (x32) SDRAM Specification
  187. K4S643232H-TC70 - 64Mb H-die (x32) SDRAM Specification
  188. K4S643232H-TC70 - 64Mb H-die (x32) SDRAM Specification
  189. K4S643232H-TC/L50 - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  190. K4S643232H-TC/L55 - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  191. K4S643232H-TC/L60 - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  192. K4S643232H-TC/L70 - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  193. K4S643232H-TL50 - 64Mb H-die (x32) SDRAM Specification
  194. K4S643232H-TL50 - 64Mb H-die (x32) SDRAM Specification
  195. K4S643232H-TL55 - 64Mb H-die (x32) SDRAM Specification
  196. K4S643232H-TL55 - 64Mb H-die (x32) SDRAM Specification
  197. K4S643232H-TL60 - 64Mb H-die (x32) SDRAM Specification
  198. K4S643232H-TL60 - 64Mb H-die (x32) SDRAM Specification
  199. K4S643232H-TL70 - 64Mb H-die (x32) SDRAM Specification
  200. K4S643232H-TL70 - 64Mb H-die (x32) SDRAM Specification
  201. K4S643233E - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  202. K4S643233E-SE/N - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  203. K4S643233E-SE/N10 - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  204. K4S643233E-SE/N70 - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  205. K4S643233E-SE/N80 - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  206. K4S643233F - 2mx32 Mobile Sdram 90fbga Cmos Sdram
  207. K4S643233F-DE/N/I/P1H - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  208. K4S643233F-DE/N/I/P1L - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  209. K4S643233F-DE/N/I/P75 - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  210. K4S643233F-SDE/N/I/P - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  211. K4S643233FSE/N/I/P1H - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  212. K4S643233F-SE/N/I/P1L - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  213. K4S643233F-SE/N/I/P75 - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  214. K4S643233F-XXXX - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  215. K4S643233H - Mobile-SDRAM
  216. K4S643233H-C - Mobile-sdram
  217. K4S643233H-F - Mobile-SDRAM
  218. K4S643233H-F(H)E/N/G/C/L/F1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  219. K4S643233H-F(H)E/N/G/C/L/F1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  220. K4S643233H-F(H)E/N/G/C/L/F60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  221. K4S643233H-F(H)E/N/G/C/L/F75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  222. K4S643233H-F1H - Mobile-SDRAM
  223. K4S643233H-F1L - Mobile-SDRAM
  224. K4S643233H-FE - Mobile-SDRAM
  225. K4S643233H-FHE - Mobile-SDRAM
  226. K4S643233H-G - Mobile-SDRAM
  227. K4S643233H-L - Mobile-SDRAM
  228. K4S643233H-N - Mobile-SDRAM
  229. K4S643234E - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  230. K4S643234E-SE/N - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  231. K4S643234E-SE/N10 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  232. K4S643234E-SE/N70 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  233. K4S643234E-TC - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  234. K4S643234E-TC10 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  235. K4S643234E-TC60 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  236. K4S643234E-TC70 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  237. K4S643234E-TC80 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  238. K4S64323LF - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  239. K4S64323LF-DG15 - 2mx32 Mobile Sdram 90fbga
  240. K4S64323LF-DG1H - 2Mx32 Mobile SDRAM 90FBGA
  241. K4S64323LF-DG1L - 2Mx32 Mobile SDRAM 90FBGA
  242. K4S64323LF-DG75 - 2Mx32 Mobile SDRAM 90FBGA
  243. K4S64323LF-DN15 - 2mx32 Mobile Sdram 90fbga
  244. K4S64323LF-DN15-PB - 2Mx32 Mobile SDRAM 90FBGA
  245. K4S64323LF-DN1H - 2Mx32 Mobile SDRAM 90FBGA
  246. K4S64323LF-DN1H-PB - 2Mx32 Mobile SDRAM 90FBGA
  247. K4S64323LF-DN1L - 2Mx32 Mobile SDRAM 90FBGA
  248. K4S64323LF-DN1L-PB - 2Mx32 Mobile SDRAM 90FBGA
  249. K4S64323LF-DN75 - 2Mx32 Mobile SDRAM 90FBGA
  250. K4S64323LF-DN75-PB - 2Mx32 Mobile SDRAM 90FBGA
  251. K4S64323LF-DP15 - 2Mx32 Mobile SDRAM 90FBGA
  252. K4S64323LF-DP15-PB - 2Mx32 Mobile SDRAM 90FBGA
  253. K4S64323LF-DP1H - 2Mx32 Mobile SDRAM 90FBGA
  254. K4S64323LF-DP1H-PB - 2Mx32 Mobile SDRAM 90FBGA
  255. K4S64323LF-DP1L - 2Mx32 Mobile SDRAM 90FBGA
  256. K4S64323LF-DP1L-PB - 2Mx32 Mobile SDRAM 90FBGA
  257. K4S64323LF-DP75 - 2Mx32 Mobile SDRAM 90FBGA
  258. K4S64323LF-DP75-PB - 2Mx32 Mobile SDRAM 90FBGA
  259. K4S64323LF-DS15 - 2Mx32 Mobile SDRAM 90FBGA
  260. K4S64323LF-DS1H - 2Mx32 Mobile SDRAM 90FBGA
  261. K4S64323LF-DS1L - 2Mx32 Mobile SDRAM 90FBGA
  262. K4S64323LF-DS75 - 2Mx32 Mobile SDRAM 90FBGA
  263. K4S64323LF-DU15 - 2Mx32 Mobile SDRAM 90FBGA
  264. K4S64323LF-DU15-PB - 2Mx32 Mobile SDRAM 90FBGA
  265. K4S64323LF-DU1H - 2Mx32 Mobile SDRAM 90FBGA
  266. K4S64323LF-DU1H-PB - 2Mx32 Mobile SDRAM 90FBGA
  267. K4S64323LF-DU1L - 2Mx32 Mobile SDRAM 90FBGA
  268. K4S64323LF-DU1L-PB - 2Mx32 Mobile SDRAM 90FBGA
  269. K4S64323LF-DU75 - 2Mx32 Mobile SDRAM 90FBGA
  270. K4S64323LF-DU75-PB - 2Mx32 Mobile SDRAM 90FBGA
  271. K4S64323LF-S - 2Mx32 Mobile SDRAM 90FBGA
  272. K4S64323LF-SDG/S - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  273. K4S64323LF-SDG/S15 - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  274. K4S64323LF-SDG/S1H - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  275. K4S64323LF-SDG/S1L - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  276. K4S64323LF-SDG/S75 - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  277. K4S64323LF-SG15 - 2Mx32 Mobile SDRAM 90FBGA
  278. K4S64323LF-SG1H - 2Mx32 Mobile SDRAM 90FBGA
  279. K4S64323LF-SG1L - 2Mx32 Mobile SDRAM 90FBGA
  280. K4S64323LF-SG75 - 2Mx32 Mobile SDRAM 90FBGA
  281. K4S64323LF-SN - 2Mx32 Mobile SDRAM 90FBGA
  282. K4S64323LF-SN15 - 2Mx32 Mobile SDRAM 90FBGA
  283. K4S64323LF-SN15-PB - 2Mx32 Mobile SDRAM 90FBGA
  284. K4S64323LF-SN1H - 2Mx32 Mobile SDRAM 90FBGA
  285. K4S64323LF-SN1H-PB - 2Mx32 Mobile SDRAM 90FBGA
  286. K4S64323LF-SN1L - 2Mx32 Mobile SDRAM 90FBGA
  287. K4S64323LF-SN1L-PB - 2Mx32 Mobile SDRAM 90FBGA
  288. K4S64323LF-SN75 - 2Mx32 Mobile SDRAM 90FBGA
  289. K4S64323LF-SN75-PB - 2Mx32 Mobile SDRAM 90FBGA
  290. K4S64323LF-SP15 - 2Mx32 Mobile SDRAM 90FBGA
  291. K4S64323LF-SP15-PB - 2Mx32 Mobile SDRAM 90FBGA
  292. K4S64323LF-SP1H - 2Mx32 Mobile SDRAM 90FBGA
  293. K4S64323LF-SP1H-PB - 2Mx32 Mobile SDRAM 90FBGA
  294. K4S64323LF-SP1L - 2Mx32 Mobile SDRAM 90FBGA
  295. K4S64323LF-SP1L-PB - 2Mx32 Mobile SDRAM 90FBGA
  296. K4S64323LF-SP75 - 2Mx32 Mobile SDRAM 90FBGA
  297. K4S64323LF-SP75-PB - 2Mx32 Mobile SDRAM 90FBGA
  298. K4S64323LF-SS15 - 2Mx32 Mobile SDRAM 90FBGA
  299. K4S64323LF-SS1H - 2Mx32 Mobile SDRAM 90FBGA
  300. K4S64323LF-SS1L - 2Mx32 Mobile SDRAM 90FBGA
  301. K4S64323LF-SS75 - 2Mx32 Mobile SDRAM 90FBGA
  302. K4S64323LF-SU15 - 2Mx32 Mobile SDRAM 90FBGA
  303. K4S64323LF-SU15-PB - 2Mx32 Mobile SDRAM 90FBGA
  304. K4S64323LF-SU1H - 2Mx32 Mobile SDRAM 90FBGA
  305. K4S64323LF-SU1H-PB - 2Mx32 Mobile SDRAM 90FBGA
  306. K4S64323LF-SU1L - 2Mx32 Mobile SDRAM 90FBGA
  307. K4S64323LF-SU1L-PB - 2Mx32 Mobile SDRAM 90FBGA
  308. K4S64323LF-SU75 - 2Mx32 Mobile SDRAM 90FBGA
  309. K4S64323LF-SU75-PB - 2Mx32 Mobile SDRAM 90FBGA
  310. K4S64323LF-XXXX - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  311. K4S64323LH - 512k X 32bit X 4 Banks Mobile Sdram In 90fbga
  312. K4S64323LH-F(H)E/N/G/C/L/F1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  313. K4S64323LH-F(H)E/N/G/C/L/F1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  314. K4S64323LH-F(H)E/N/G/C/L/F60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  315. K4S64323LH-F(H)E/N/G/C/L/F75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  316. K4S64323LH-FC1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  317. K4S64323LH-FC1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  318. K4S64323LH-FC60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  319. K4S64323LH-FC75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  320. K4S64323LH-FE1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  321. K4S64323LH-FE1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  322. K4S64323LH-FE60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  323. K4S64323LH-FE75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  324. K4S64323LH-FF1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  325. K4S64323LH-FF1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  326. K4S64323LH-FF60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  327. K4S64323LH-FF75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  328. K4S64323LH-FG1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  329. K4S64323LH-FG1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  330. K4S64323LH-FG60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  331. K4S64323LH-FG75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  332. K4S64323LH-FL1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  333. K4S64323LH-FL1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  334. K4S64323LH-FL60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  335. K4S64323LH-FL75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  336. K4S64323LH-FN1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  337. K4S64323LH-FN1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  338. K4S64323LH-FN60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  339. K4S64323LH-FN75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  340. K4S64323LH-HC1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  341. K4S64323LH-HC1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  342. K4S64323LH-HC60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  343. K4S64323LH-HC75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  344. K4S64323LH-HE1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  345. K4S64323LH-HE1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  346. K4S64323LH-HE60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  347. K4S64323LH-HE75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  348. K4S64323LH-HF1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  349. K4S64323LH-HF1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  350. K4S64323LH-HF60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  351. K4S64323LH-HF75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  352. K4S64323LH-HG1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  353. K4S64323LH-HG1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  354. K4S64323LH-HG60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  355. K4S64323LH-HG75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  356. K4S64323LH-HL1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  357. K4S64323LH-HL1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  358. K4S64323LH-HL60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  359. K4S64323LH-HL75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  360. K4S64323LH-HN1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  361. K4S64323LH-HN1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  362. K4S64323LH-HN60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  363. K4S64323LH-HN75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  364. K4T1G044QA - 1gb A-die Ddr2 Sdram Specification
  365. K4T1G044QA-ZCCC0 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  366. K4T1G044QA-ZCD5 - 1Gb A-die DDR2 SDRAM Specification
  367. K4T1G044QA-ZCD50 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  368. K4T1G044QA-ZCE6 - 1Gb A-die DDR2 SDRAM Specification
  369. K4T1G044QM - 1gb M-die Ddr2 Sdram Specification
  370. K4T1G044QM-ZCCC - 1Gb M-die DDR2 SDRAM Specification
  371. K4T1G044QM-ZCD5 - 1Gb M-die DDR2 SDRAM Specification
  372. K4T1G084QA - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  373. K4T1G084QA-ZCCC0 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  374. K4T1G084QA-ZCD5 - 1Gb A-die DDR2 SDRAM Specification
  375. K4T1G084QA-ZCD50 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  376. K4T1G084QA-ZCDS0 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  377. K4T1G084QA-ZCE6 - 1Gb A-die DDR2 SDRAM Specification
  378. K4T1G084QA-ZCE60 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  379. K4T1G084QM-ZCCC - 1Gb M-die DDR2 SDRAM Specification
  380. K4T1G084QM-ZCD5 - 1Gb M-die DDR2 SDRAM Specification
  381. K4T1G164QA - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  382. K4T1G164QA-ZCCC0 - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  383. K4T1G164QA-ZCD5 - 1Gb A-die DDR2 SDRAM Specification
  384. K4T1G164QA-ZCD50 - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  385. K4T1G164QA-ZCE6 - 1Gb A-die DDR2 SDRAM Specification
  386. K4T1G164QM-ZCCC - 1Gb M-die DDR2 SDRAM Specification
  387. K4T1G164QM-ZCD5 - 1Gb M-die DDR2 SDRAM Specification
  388. K4T51043Q - 512mb B-die Ddr2 Sdram
  389. K4T51043QB - 512Mb B-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications.
  390. K4T51043QB - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  391. K4T51043QB-GCCC - 512Mb B-die DDR2 SDRAM
  392. K4T51043QB-GCD5 - 512Mb B-die DDR2 SDRAM
  393. K4T51043QB-GCE6 - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  394. K4T51043QB-GLCC - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  395. K4T51043QB-GLD5 - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  396. K4T51043QB-GLE6 - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  397. K4T51043QB-ZCCC - 512Mb B-die DDR2 SDRAM
  398. K4T51043QB-ZCD5 - 512Mb B-die DDR2 SDRAM
  399. K4T51043QC - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  400. K4T51043QC-ZC(L)E7 - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  401. K4T51043QC-ZCCC - 512Mb C-die DDR2 SDRAM
  402. K4T51043QC-ZCD5 - 512Mb C-die DDR2 SDRAM
  403. K4T51043QC-ZCD6 - 512Mb C-die DDR2 SDRAM
  404. K4T51043QC-ZCE6 - 512Mb C-die DDR2 SDRAM
  405. K4T51043QC-ZCE7 - 512Mb C-die DDR2 SDRAM
  406. K4T51043QC-ZCLCC - 512mb C-die Ddr2 Sdram
  407. K4T51043QC-ZCLD5 - 512Mb C-die DDR2 SDRAM
  408. K4T51043QC-ZCLD6 - 512Mb C-die DDR2 SDRAM
  409. K4T51043QC-ZCLE6 - 512Mb C-die DDR2 SDRAM
  410. K4T51043QC-ZLCC - 512Mb C-die DDR2 SDRAM
  411. K4T51043QC-ZLD5 - 512Mb C-die DDR2 SDRAM
  412. K4T51043QC-ZLE6 - 512Mb C-die DDR2 SDRAM
  413. K4T51043QC-ZLE7 - 512Mb C-die DDR2 SDRAM
  414. K4T51043QM - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  415. K4T51043QM-GCD4 - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  416. K4T51043QM-GCD5 - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  417. K4T51043QM-GCE5 - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  418. K4T51043QM-GLD4 - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  419. K4T51043QM-GLD5 - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  420. K4T51043QM-GLE5 - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  421. K4T51083QB - 512Mb B-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications.
  422. K4T51083QB - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  423. K4T51083QB-GCCC - 512Mb B-die DDR2 SDRAM
  424. K4T51083QB-GCD5 - 512Mb B-die DDR2 SDRAM
  425. K4T51083QB-GCE6 - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  426. K4T51083QB-GLCC - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  427. K4T51083QB-GLD5 - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  428. K4T51083QB-GLE6 - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  429. K4T51083QB-ZCCC - 512Mb B-die DDR2 SDRAM
  430. K4T51083QB-ZCD5 - 512Mb B-die DDR2 SDRAM
  431. K4T51083QC - 512Mb C-die DDR2 SDRAM
  432. K4T51083QC-ZC(L)E7 - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 16Mbit x 8 I/Os x 4banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  433. K4T51083QC-ZCCC - 512Mb C-die DDR2 SDRAM
  434. K4T51083QC-ZCD5 - 512Mb C-die DDR2 SDRAM
  435. K4T51083QC-ZCD6 - 512Mb C-die DDR2 SDRAM
  436. K4T51083QC-ZCE6 - 512Mb C-die DDR2 SDRAM
  437. K4T51083QC-ZCE7 - 512Mb C-die DDR2 SDRAM
  438. K4T51083QC-ZCLCC - 512Mb C-die DDR2 SDRAM
  439. K4T51083QC-ZCLD5 - 512Mb C-die DDR2 SDRAM
  440. K4T51083QC-ZCLD6 - 512Mb C-die DDR2 SDRAM
  441. K4T51083QC-ZCLE6 - 512Mb C-die DDR2 SDRAM
  442. K4T51083QC-ZLCC - 512Mb C-die DDR2 SDRAM
  443. K4T51083QC-ZLD5 - 512Mb C-die DDR2 SDRAM
  444. K4T51083QC-ZLE6 - 512Mb C-die DDR2 SDRAM
  445. K4T51083QC-ZLE7 - 512Mb C-die DDR2 SDRAM
  446. K4T51083QM - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  447. K4T51083QM-GCD4 - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  448. K4T51083QM-GCD5 - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  449. K4T51083QM-GCE5 - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  450. K4T51083QM-GLD4 - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  451. K4T51083QM-GLD5 - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  452. K4T51083QM-GLE5 - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  453. K4T51163QB - 512Mb B-die DDR2 SDRAM
  454. K4T51163QB-GCCC - 512Mb B-die DDR2 SDRAM
  455. K4T51163QB-GCD5 - 512Mb B-die DDR2 SDRAM
  456. K4T51163QB-GCE6 - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  457. K4T51163QB-GLCC - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  458. K4T51163QB-GLD5 - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  459. K4T51163QB-GLE6 - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  460. K4T51163QB-ZCCC - 512Mb B-die DDR2 SDRAM
  461. K4T51163QB-ZCD5 - 512Mb B-die DDR2 SDRAM
  462. K4T51163QC - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  463. K4T51163QC-ZC(L)E7 - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  464. K4T51163QC-ZCCC - 512Mb C-die DDR2 SDRAM
  465. K4T51163QC-ZCD5 - 512Mb C-die DDR2 SDRAM
  466. K4T51163QC-ZCD6 - 512Mb C-die DDR2 SDRAM
  467. K4T51163QC-ZCE6 - 512Mb C-die DDR2 SDRAM
  468. K4T51163QC-ZCE7 - 512Mb C-die DDR2 SDRAM
  469. K4T51163QC-ZCLCC - 512Mb C-die DDR2 SDRAM
  470. K4T51163QC-ZCLD5 - 512Mb C-die DDR2 SDRAM
  471. K4T51163QC-ZCLD6 - 512Mb C-die DDR2 SDRAM
  472. K4T51163QC-ZCLE6 - 512Mb C-die DDR2 SDRAM
  473. K4T51163QC-ZLCC - 512Mb C-die DDR2 SDRAM
  474. K4T51163QC-ZLD5 - 512Mb C-die DDR2 SDRAM
  475. K4T51163QC-ZLE6 - 512Mb C-die DDR2 SDRAM
  476. K4T51163QC-ZLE7 - 512Mb C-die DDR2 SDRAM
  477. K4T51163QM - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  478. K4T51163QM-GCD4 - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  479. K4T51163QM-GCD5 - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  480. K4T51163QM-GCE5 - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  481. K4T51163QM-GLD4 - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  482. K4T51163QM-GLD5 - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  483. K4T51163QM-GLE5 - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  484. K4T56043QF - 256Mb F-die DDR2 SDRAM
  485. K4T56043QF-GCCC - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  486. K4T56043QF-GCD5 - 256Mb F-die DDR2 SDRAM
  487. K4T56043QF-GCE6 - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  488. K4T56043QF-GLCC - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  489. K4T56043QF-GLD5 - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  490. K4T56043QF-GLE6 - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  491. K4T56043QF-ZCCC - 256Mb F-die DDR2 SDRAMThe 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and addres
  492. K4T56043QF-ZCD5 - 256Mb F-die DDR2 SDRAM
  493. K4T56083QF - 256Mb F-die DDR2 SDRAM
  494. K4T56083QF-GCCC - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  495. K4T56083QF-GCD5 - 256Mb F-die DDR2 SDRAM
  496. K4T56083QF-GCE6 - 256Mb F-die DDR2 SDRAM
  497. K4T56083QF-GLCC - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  498. K4T56083QF-GLD5 - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  499. K4T56083QF-GLE6 - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  500. K4T56083QF-ZCD5 - 256mb F-die Ddr2 Sdram