K4S641633D - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
K4S641633D-G - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
K4S641633D-GC/L1H - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
K4S641633D-GC/L1L - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
K4S641633D-GE/N1H - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
K4S641633D-GE/N1L - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
K4S641633F - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S641633F-GAL/N/P - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S641633F-GAL/N/P1H - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S641633F-GAL/N/P1L - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S641633F-GAL/N/P75 - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S641633H - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S641633H-C - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-F1H - 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4S641633H-F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-G - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-N - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-R - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-R(B)E/N/G/C/L/F1H - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S641633H-R(B)E/N/G/C/L/F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S641633H-R(B)E/N/G/C/L/F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S641633H-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-RE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LF - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S64163LF-GAF/R - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S64163LF-GAF/R15 - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S64163LF-GAF/R1H - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S64163LF-GAF/R1L - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S64163LF-GAF/R75 - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
K4S64163LH - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-C - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-F1H - 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4S64163LH-F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-G - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-N - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-R(B)E/N/G/C/L/F1H - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S64163LH-R(B)E/N/G/C/L/F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S64163LH-R(B)E/N/G/C/L/F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S64163LH-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S643232C - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC10 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC80 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC/L10 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
K4S643232C-TC/L55 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
K4S643232C-TC/L60 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
K4S643232C-TC/L70 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
K4S643232C-TC/L80 - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
K4S643232C-TL10 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TL55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TL60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TL70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TL80 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl(3.3v)
K4S643232E - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC45 - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
K4S643232E-TC50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC/L45 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S643232E-TC/L50 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S643232E-TC/L55 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S643232E-TC/L60 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S643232E-TC/L70 - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4S643232E-TE50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TE60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TE70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TI - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
K4S643232E-TI60 - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous DRAM LVTTL (3.3v)
K4S643232E-TI70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TL45 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TL50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TL55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TL60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TL70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TN50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TN60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TN70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TP60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TP70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
K4S643232F- - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl3.3v
K4S643232F-TC45 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TC50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TC55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TC60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TC70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TC/L45 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
K4S643232F-TC/L50 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
K4S643232F-TC/L55 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
K4S643232F-TC/L60 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
K4S643232F-TC/L70 - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
K4S643232F-TI60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
K4S643232F-TI70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
K4S643232F-TL45 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TL50 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TL55 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TL60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TL70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TP60 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
K4S643232F-TP70 - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
K4S643233F-DE/N/I/P1H - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S643233F-DE/N/I/P1L - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S643233F-DE/N/I/P75 - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S643233F-SDE/N/I/P - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S643233FSE/N/I/P1H - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S643233F-SE/N/I/P1L - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S643233F-SE/N/I/P75 - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S643233F-XXXX - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S643233H-F(H)E/N/G/C/L/F1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S643233H-F(H)E/N/G/C/L/F1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S643233H-F(H)E/N/G/C/L/F60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S643233H-F(H)E/N/G/C/L/F75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S643234E - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
K4S643234E-SE/N - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
K4S643234E-SE/N10 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
K4S643234E-SE/N70 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
K4S643234E-TC - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
K4S643234E-TC10 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
K4S643234E-TC60 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
K4S643234E-TC70 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
K4S643234E-TC80 - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
K4S64323LF - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S64323LF-SDG/S - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S64323LF-SDG/S15 - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S64323LF-SDG/S1H - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S64323LF-SDG/S1L - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S64323LF-SDG/S75 - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S64323LF-XXXX - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S64323LH - 512k X 32bit X 4 Banks Mobile Sdram In 90fbga
K4S64323LH-F(H)E/N/G/C/L/F1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S64323LH-F(H)E/N/G/C/L/F1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S64323LH-F(H)E/N/G/C/L/F60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S64323LH-F(H)E/N/G/C/L/F75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S64323LH-FC1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FC1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FC60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FC75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FE1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FE1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FE60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FE75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FF1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FF1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FF60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FF75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FG1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FG1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FG60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FG75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FL1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FL1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FL60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FL75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FN1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FN1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FN60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FN75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HC1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HC1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HC60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HC75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HE1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HE1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HE60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HE75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HF1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HF1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HF60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HF75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HG1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HG1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HG60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HG75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HL1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HL1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HL60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HL75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HN1H - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HN1L - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HN60 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-HN75 - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4T1G044QA-ZCCC0 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
K4T1G044QA-ZCD50 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
K4T1G084QA - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
K4T1G084QA-ZCCC0 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
K4T1G084QA-ZCD50 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
K4T1G084QA-ZCDS0 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
K4T1G084QA-ZCE60 - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
K4T1G164QA - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
K4T1G164QA-ZCCC0 - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
K4T1G164QA-ZCD50 - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
K4T51043QB - 512Mb B-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications.
K4T51043QC - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
K4T51043QC-ZC(L)E7 - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
K4T51083QB - 512Mb B-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications.
K4T51083QC-ZC(L)E7 - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 16Mbit x 8 I/Os x 4banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
K4T51163QC - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
K4T51163QC-ZC(L)E7 - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
K4T56043QF-ZCCC - 256Mb F-die DDR2 SDRAMThe 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and addres