K4T51163QC (Samsung)
Electronic component documentation (datasheet) «K4T51163QC» (512 Mb), manufacturer Samsung. Download datasheet file:
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Partname | K4T51163QC |
Description | 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of |
Functional | 512 Mb | Manufacturer | Samsung semiconductor | |
Site | www.samsung.com |
| Size | Pages: 29, 630.07Kb |
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