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Electronic components list SemeLAB, page 3
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www.semelab.co.uk
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BCY59C
- Bipolar NPN Device inA Hermetically sealed TO18 Metal Package
BCY59CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 120 ; HFE(max) = 630 ; @ Vce/ic = 5V / 2mA ; FT = 125MHz ; PD = 0.36W
BCY59DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 120 ; HFE(max) = 630 ; @ Vce/ic = 5V / 2mA ; FT = 125MHz ; PD = 0.36W
BCY70CSM
- High Speed Medium Power Pnp Switching Transistor
BCY70DCSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.2A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 1V / 10mA ; FT = 250MHz ; PD = 0.36W
BCY71CSM
- HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR
BCY71DCSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 100 ; HFE(max) = 600 ; @ Vce/ic = 1V / 10mA ; FT = 250MHz ; PD = 0.36W
BCY72CSM
- HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR
BCY72DCSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 25V ; IC(cont) = 0.2A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 1V / 10mA ; FT = 250MHz ; PD = 0.36W
BCY78A
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 32V ; IC(cont) = 0.2A ; HFE(min) = 120 ; HFE(max) = 220 ; @ Vce/ic = 5V / 2mA ; FT = 100MHz ; PD = 0.36W
BCY78B
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 32V ; IC(cont) = 0.2A ; HFE(min) = 180 ; HFE(max) = 310 ; @ Vce/ic = 5V / 2mA ; FT = 100MHz ; PD = 0.36W
BCY78C
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 32V ; IC(cont) = 0.2A ; HFE(min) = 250 ; HFE(max) = 460 ; @ Vce/ic = 5V / 2mA ; FT = 100MHz ; PD = 0.36W
BCY78CSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 32V ; IC(cont) = 0.2A ; HFE(min) = 120 ; HFE(max) = 630 ; @ Vce/ic = 5V / 2mA ; FT = 100MHz ; PD = 0.36W
BCY78D
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 32V ; IC(cont) = 0.2A ; HFE(min) = 380 ; HFE(max) = 630 ; @ Vce/ic = 5V / 2mA ; FT = 100MHz ; PD = 0.36W
BCY78DCSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 32V ; IC(cont) = 0.2A ; HFE(min) = 120 ; HFE(max) = 630 ; @ Vce/ic = 5V / 2mA ; FT = 100MHz ; PD = 0.36W
BCY79A
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 120 ; HFE(max) = 220 ; @ Vce/ic = 1V / 10mA ; FT = 180MHz ; PD = 0.39W
BCY79B
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 180 ; HFE(max) = 310 ; @ Vce/ic = 1V / 10mA ; FT = 180MHz ; PD = 0.39W
BCY79C
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 45V ; IC(cont) = 0.2A ; HFE(min) = 250 ; HFE(max) = 460 ; @ Vce/ic = 1V / 10mA ; FT = 180MHz ; PD = 0.39W
BCY89
- Npn Silicon Planar Dual Transistors
BD121
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 35V ; IC(cont) = 5A ; HFE(min) = 15 ; HFE(max) = - ; @ Vce/ic = 10V / 100mA ; FT = 60MHz ; PD = 45W
BD253A
- Bipolar Npn Device InA Hermetically Sealed To3 Metal Package
BDS10
- Silicon Npn Epitaxial Base In To220 Metal and Smd1 Ceramic Surface Mount Packages
BDS10CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS10IG
- Silicon Npn Epitaxial Base In To257 Metal Package
BDS10SMD
- SILICON NPN EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS10SMD05
- Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 50W
BDS11
- SILICON NPN EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS11CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 80V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS11IG
- SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
BDS11SMD
- SILICON NPN EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS11SMD05
- Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 50W
BDS12
- SILICON NPN EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS12CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 100V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS12IG
- SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
BDS12SMD
- SILICON NPN EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS12SMD05
- Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 100V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 50W
BDS13
- Silicon Pnp Epitaxial Base In To220 Metal and Smd1 Ceramic Surface Mount Packages
BDS13CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS13F
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS13IG
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS13SMD
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS13SMD05
- Screening Options Available = ; Polarity = PNP ; Package = SMD0.5 (TO276AA) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 50W
BDS14
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS14CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 80V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS14SMD
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS14SMD05
- Screening Options Available = ; Polarity = PNP ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 50W
BDS15
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS15CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 100V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS15IG
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 100V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 90W
BDS15SMD
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS15SMD05
- Screening Options Available = ; Polarity = PNP ; Package = SMD0.5 (TO276AA) ; Vceo = 100V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = 3MHz ; PD = 50W
BDS16
- Silicon Npn Epitaxial Base In To220 Metal and Smd1 Ceramic Surface Mount Packages
BDS16CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 120V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS16IG
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 120V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS16SMD
- SILICON NPN EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS16SMD05
- Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 120V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS17
- SILICON NPN EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS17CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 150V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS17IG
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 150V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS17SMD
- SILICON NPN EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS17SMD05
- Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 150V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS18
- Silicon Pnp Epitaxial Base In To220 Metal and Smd1 Ceramic Surface Mount Packages
BDS18CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 120V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS18IG
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 120V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS18SMD
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS18SMD05
- Screening Options Available = ; Polarity = PNP ; Package = SMD0.5 (TO276AA) ; Vceo = 120V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS18XX
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 120V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS19
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS19CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 150V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS19IG
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 150V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS19SMD
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS19SMD05
- Screening Options Available = ; Polarity = PNP ; Package = SMD0.5 (TO276AA) ; Vceo = 150V ; IC(cont) = 15A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 2V / 500mA ; FT = 30MHz ; PD = 50W
BDS20
- Silicon Pnp Epitaxial Base In To220 Metal and Smd1 Ceramic Surface Mount Packages
BDS20CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 3V / 500mA ; FT = 8MHz ; PD = 50W
BDS20IG
- Screening Options Available = ; Polarity = NPN ; Package = TO257AB (TO220M) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 3V / 500mA ; FT = 8MHz ; PD = 50W
BDS20SMD
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS21
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS21CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 3V / 500mA ; FT = 8MHz ; PD = 50W
BDS21IG
- Screening Options Available = ; Polarity = PNP ; Package = TO257AB (TO220M) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 3V / 500mA ; FT = 8MHz ; PD = 50W
BDS21SMD
- SILICON PNP EPITAXIAL BASE IN TO220 METAL and SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDS28ASMD
- Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 100W
BDS28BSMD
- Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 90V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 100W
BDS28CSMD
- Screening Options Available = ; Polarity = PNP ; Package = SMD1 (TO276AB) ; Vceo = 120V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 100W
BDS29A
- Screening Options Available = ; Polarity = NPN ; Package = TO254AA ; Vceo = 60V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 150W
BDS29ASMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 100W
BDS29B
- Screening Options Available = ; Polarity = NPN ; Package = TO254AA ; Vceo = 90V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 150W
BDS29BSMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 90V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 100W
BDS29C
- Screening Options Available = ; Polarity = NPN ; Package = TO254AA ; Vceo = 120V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 150W
BDS29CSMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 120V ; IC(cont) = 30A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 5V / 20A ; FT = 4MHz ; PD = 100W
BDW21
- Bipolar NPN Device
BDW21A
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 15 ; HFE(max) = 150 ; @ Vce/ic = 4V / 4A ; FT = 3MHz ; PD = 90W
BDW21B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 15 ; HFE(max) = 150 ; @ Vce/ic = 4V / 4A ; FT = 3MHz ; PD = 90W
BDW21C
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDW22
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDW22A
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 15 ; HFE(max) = 150 ; @ Vce/ic = 4V / 4A ; FT = 3MHz ; PD = 90W
BDW22B
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 15 ; HFE(max) = 150 ; @ Vce/ic = 4V / 4A ; FT = 3MHz ; PD = 90W
BDW22C
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 10A ; HFE(min) = 15 ; HFE(max) = 150 ; @ Vce/ic = 4V / 4A ; FT = 3MHz ; PD = 90W
BDW51A
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDW51B
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDW51C
- Bipolar NPN Device
BDW52
- Bipolar PNP Device
BDW52A
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDW84B
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package.
BDX10
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = 70 ; @ Vce/ic = 4V / 4A ; FT = - ; PD = 117W
BDX11
- Bipolar NPN Device
BDX12
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDX13
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 40V ; IC(cont) = 15A ; HFE(min) = 15 ; HFE(max) = 60 ; @ Vce/ic = 4V / 8A ; FT = - ; PD = 117W
BDX14
- Pnp Silicon Transistor, Epitaxial Base
BDX14A
- PNP SILICON TRANSISTOR, EPITAXIAL BASE
BDX14AA
- PNP SILICON TRANSISTOR, EPITAXIAL BASE
BDX14S
- Screening Options Available = ; Polarity = PNP ; Package = TO66 (TO213AA) ; Vceo = 60V ; IC(cont) = 4A ; HFE(min) = 100 ; HFE(max) = 120 ; @ Vce/ic = 4V / 300mA ; FT = 0.8MHz ; PD = 29W
BDX16
- Screening Options Available = ; Polarity = PNP ; Package = TO66 (TO213AA) ; Vceo = 140V ; IC(cont) = 3A ; HFE(min) = 20 ; HFE(max) = 80 ; @ Vce/ic = 4V / 300mA ; FT = 0.8MHz ; PD = 25W
BDX16A
- Bipolar Pnp Device
BDX18A
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 70V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = 70 ; @ Vce/ic = 4V / 4A ; FT = 0.8MHz ; PD = 117W
BDX25/66-6
- Screening Options Available = ; Polarity = NPN ; Package = TO66 (TO213AA) ; Vceo = - ; IC(cont) = - ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = - ; PD = -
BDX62
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 8A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 3V / 3A ; FT = 7MHz ; PD = 90W
BDX62A
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDX62B
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDX62C
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDX63
- Npn Epitaxial Base Darlington Power Transistor
BDX63A
- NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX63B
- NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX63C
- NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX64C
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDX65
- Bipolar NPN Device
BDX65B
- Bipolar NPN Device
BDX66
- Bipolar PNP Device
BDX66C
- Bipolar Pnp Device InA Hermetically Sealed To3 Metal Package
BDX67
- Npn Epitaxial Base Darlington Power Transistor
BDX67A
- NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX67ACECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 16A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 3V / 10A ; FT = 7MHz ; PD = 150W
BDX67B
- NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX67BCECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 16A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 3V / 10A ; FT = 7MHz ; PD = 150W
BDX67C
- NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX67CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 120V ; IC(cont) = 16A ; HFE(min) = 1000 ; HFE(max) = - ; @ Vce/ic = 3V / 10A ; FT = 7MHz ; PD = 150W
BDX68
- Pnp Darlington Power Transistor
BDX68A
- PNP DARLINGTON POWER TRANSISTOR
BDX68B
- PNP DARLINGTON POWER TRANSISTOR
BDX68C
- PNP DARLINGTON POWER TRANSISTOR
BDX69
- Npn Darlington Power Transistor
BDX69A
- NPN DARLINGTON POWER TRANSISTOR
BDX69B
- NPN DARLINGTON POWER TRANSISTOR
BDX69C
- NPN DARLINGTON POWER TRANSISTOR
BDX83
- Bipolar NPN Device
BDX83A
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 750 ; HFE(max) = - ; @ Vce/ic = 3V / 1A ; FT = - ; PD = 125W
BDX83B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 750 ; HFE(max) = - ; @ Vce/ic = 3V / 1A ; FT = - ; PD = 125W
BDX83C
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 10A ; HFE(min) = 750 ; HFE(max) = - ; @ Vce/ic = 3V / 1A ; FT = - ; PD = 125W
BDX84
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 40V ; IC(cont) = 10A ; HFE(min) = 750 ; HFE(max) = - ; @ Vce/ic = 3V / 1A ; FT = - ; PD = 120W
BDX84A
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 750 ; HFE(max) = - ; @ Vce/ic = 3V / 1A ; FT = - ; PD = 120W
BDX84B
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 750 ; HFE(max) = - ; @ Vce/ic = 3V / 1A ; FT = - ; PD = 120W
BDX84C
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDX85C
- Bipolar NPN Device
BDX86
- Bipolar PNP Device
BDX87B
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDX87C
- Bipolar NPN Device
BDX88
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDX88B
- Bipolar PNP Device
BDX91
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDX91CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDX92
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDX92CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDX93
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDX93CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDX94
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDX94CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDX95
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDX95CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDX96
- Bipolar PNP Device inA Hermetically sealed TO3 Metal Package
BDX96CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 8A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 3A ; FT = 4MHz ; PD = 90W
BDY20
- Bipolar NPN Device
BDY23A
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 6A ; HFE(min) = 15 ; HFE(max) = 45 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY23B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 6A ; HFE(min) = 30 ; HFE(max) = 90 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY23C
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 6A ; HFE(min) = 75 ; HFE(max) = 180 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY24B
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package.
BDY24C
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDY25
- Bipolar NPN Device
BDY25A
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 140V ; IC(cont) = 6A ; HFE(min) = 15 ; HFE(max) = 45 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY25B
- Bipolar NPN Device
BDY25C
- Bipolar NPN Device
BDY26A
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 180V ; IC(cont) = 6A ; HFE(min) = 15 ; HFE(max) = 45 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY26B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 180V ; IC(cont) = 6A ; HFE(min) = 30 ; HFE(max) = 90 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY26C
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 180V ; IC(cont) = 6A ; HFE(min) = 75 ; HFE(max) = 180 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY27
- Bipolar NPN Device
BDY27AS
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 6A ; HFE(min) = 15 ; HFE(max) = 45 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY27B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 6A ; HFE(min) = 30 ; HFE(max) = 90 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY27C
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 6A ; HFE(min) = 75 ; HFE(max) = 180 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY27CX
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 6A ; HFE(min) = 60 ; HFE(max) = 80 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY28A
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 250V ; IC(cont) = 6A ; HFE(min) = 15 ; HFE(max) = 45 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY28B
- BIPOLAR NPN DEVICE INA HERMETICALLY SEALED TO3 METAL PACKAGE
BDY28C
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 250V ; IC(cont) = 6A ; HFE(min) = 75 ; HFE(max) = 180 ; @ Vce/ic = 4V / 2A ; FT = 10MHz ; PD = 85W
BDY42
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDY43
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 300V ; IC(cont) = 5A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 1A ; FT = 12MHz ; PD = 60W
BDY44
-
BDY45
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 250V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 2A ; FT = 13MHz ; PD = 95W
BDY46
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 300V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 2V / 2A ; FT = 13MHz ; PD = 95W
BDY47
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDY54
- Bipolar NPN Device
BDY55CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = 70 ; @ Vce/ic = 4V / 4A ; FT = 10MHz ; PD = 117W
BDY55X
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = 100 ; @ Vce/ic = 4V / 4A ; FT = 10MHz ; PD = 117W
BDY56CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 120V ; IC(cont) = 15A ; HFE(min) = 20 ; HFE(max) = 70 ; @ Vce/ic = 4V / 4A ; FT = 10MHz ; PD = 117W
BDY57CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 25A ; HFE(min) = 20 ; HFE(max) = 60 ; @ Vce/ic = 4V / 10A ; FT = 7MHz ; PD = 175W
BDY58A
- Bipolar NPN Device
BDY58B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 125V ; IC(cont) = 25A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic = 4V / 10A ; FT = 7MHz ; PD = 175W
BDY58C
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 125V ; IC(cont) = 25A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic = 4V / 10A ; FT = 7MHz ; PD = 175W
BDY58CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 125V ; IC(cont) = 25A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic = 4V / 10A ; FT = 7MHz ; PD = 175W
BDY58S
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDY60
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDY60/02
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 160 ; @ Vce/ic = 1V / 1A ; FT = 100MHz ; PD = 30W
BDY61
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDY62
- Bipolar NPN Device
BDY71
- Bipolar NPN Device
BDY71X
- Screening Options Available = ; Polarity = NPN ; Package = TO66 (TO213AA) ; Vceo = 55V ; IC(cont) = 4A ; HFE(min) = 80 ; HFE(max) = 250 ; @ Vce/ic = 4V / 500mA ; FT = - ; PD = 29W
BDY72
- Bipolar NPN Device inA Hermetically sealed TO66 Metal Package
BDY73
- Bipolar NPN Device
BDY74
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 120V ; IC(cont) = 10A ; HFE(min) = 50 ; HFE(max) = 150 ; @ Vce/ic = 4V / 3A ; FT = - ; PD = 117W
BDY76
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 20A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 4V / 10A ; FT = - ; PD = 150W
BDY76E
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 20A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 4V / 10A ; FT = - ; PD = 150W
BDY77
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 120V ; IC(cont) = 16A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 4V / 8A ; FT = - ; PD = 150W
BDY78
- Bipolar NPN Device
BDY79
- Bipolar Npn Device
BDY90CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 10A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 5V / 5A ; FT = 40MHz ; PD = 70W
BDY90S
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 10A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 5V / 5A ; FT = 40MHz ; PD = 70W
BDY91CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 80V ; IC(cont) = 10A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 5V / 5A ; FT = 40MHz ; PD = 70W
BDY92CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 60V ; IC(cont) = 10A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 5V / 5A ; FT = 40MHz ; PD = 70W
BDY93
- Bipolar NPN Device
BDY94
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDY95
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package.
BDY96
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 350V ; IC(cont) = 10A ; HFE(min) = 15 ; HFE(max) = 60 ; @ Vce/ic = 5V / 2A ; FT = 10MHz ; PD = 40W
BDY97
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BDY98
- Bipolar NPN Device
BF257CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 160V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 90MHz ; PD = 0.36W
BF257CSM4
- Screening Options Available = ; Polarity = NPN ; Package = LCC3 (MO-041BA) ; Vceo = 160V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 90MHz ; PD = 0.4W
BF257DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 160V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 90MHz ; PD = 0.36W
BF258CSM4
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 250V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 90MHz ; PD = 0.8W
BF258DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 250V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 90MHz ; PD = 0.36W
BF259CSM4
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 300V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 90MHz ; PD = 0.8W
BF259L
- Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 300V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 90MHz ; PD = 0.8W
BF338
- Bipolar Npn Device InA Hermetically Sealed To39 Metal Package
BF355
- Bipolar NPN Device
BFC11
- 4th Generation Mosfet N-channel Enhancement Mode High Voltage Isolated Power Mosfets
BFC13
- 4th Generation Mosfet
BFC19
- 4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
BFC40
- N-channel Enhancement Mode High Voltage Isolated Power Mosfets
BFC42
- 4TH GENERATION MOSFET
BFC43
- 4th Generation Mosfet
BFC44
- N-channel Enhancement Mode High Voltage Power Mosfets
BFC48
- 4TH GENERATION MOSFET
BFC50
- 4th Generation Mosfet
BFC51
- 4th Generation Mosfet
BFC60
- N-channel Enhancement Mode High Voltage Isolated Power Mosfets
BFC61
- 4th Generation Mosfet
BFQ34/01/B
- Transistor RF Sot-122a
BFQ38S
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 250V ; IC(cont) = 1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 5V / 50mA ; FT = 20MHz ; PD = 0.6W
BFT28
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 1A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 25MHz ; PD = 1W
BFT29X
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 80V ; IC(cont) = 1A ; HFE(min) = 50 ; HFE(max) = 250 ; @ Vce/ic = 10V / 100mA ; FT = 100MHz ; PD = 0.36W
BFT30CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 60V ; IC(cont) = 1A ; HFE(min) = 75 ; HFE(max) = 250 ; @ Vce/ic = 10V / 100mA ; FT = - ; PD = 0.36W
BFT30DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 1A ; HFE(min) = 75 ; HFE(max) = 250 ; @ Vce/ic = 10V / 100mA ; FT = - ; PD = 0.36W
BFT31
- Bipolar NPN Device inA Hermetically sealed TO18 Metal Package.
BFT32
- Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
BFT32A
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT32ACECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT33
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 250 ; @ Vce/ic = 10V / 150mA ; FT = - ; PD = 1W
BFT33A
- NPN SILICON TRANSISTOR
BFT33ACECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 250 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT33B
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 250 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT33L
- Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 250 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT34
- Bipolar NPN Device.
BFT34A
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 200 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT34ACECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 200 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT35
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = - ; PD = 1W
BFT35ACECC
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 300 ; @ Vce/ic = 10V / 150mA ; FT = - ; PD = 1W
BFT36
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 250 ; @ Vce/ic = 10V / 150mA ; FT = - ; PD = 1W
BFT36A
- Pnp Silicon Transistor
BFT36ACECC
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 250 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT36L
- Screening Options Available = ; Polarity = PNP ; Package = TO5 (TO205AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 250 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT37
-
BFT37A
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 200 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT37ACECC
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 5A ; HFE(min) = 50 ; HFE(max) = 200 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 1W
BFT40
- Bipolar NPN Device inA Hermetically sealed TO39 Metal Package.
BFT41
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 50V ; IC(cont) = 1A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 10V / 100mA ; FT = 100MHz ; PD = 0.8W
BFT44
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 300V ; IC(cont) = 0.5A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 60MHz ; PD = 5W
BFT44S
- Bipolar Pnp Device InA Hermetically Sealed To39 Metal Package
BFT46/T1
- Transistor JFET Sot-23
BFT48
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 250V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 5W
BFT49
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 300V ; IC(cont) = 0.1A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 5W
BFT53
- Bipolar NPN Device inA Hermetically sealed TO18 Metal Package
BFT54
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 30V ; IC(cont) = 1A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 6V / 1mA ; FT = 50MHz ; PD = 0.36W
BFT57
- Bipolar NPN Device inA Hermetically sealed TO18 Metal Package
BFT57CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 160V ; IC(cont) = 0.2A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 110MHz ; PD = 0.36W
BFT57DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 160V ; IC(cont) = 0.2A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 110MHz ; PD = 0.36W
BFT58
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 200V ; IC(cont) = 0.2A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 110MHz ; PD = 0.36W
BFT58CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 200V ; IC(cont) = 0.2A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 110MHz ; PD = 0.36W
BFT58DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 200V ; IC(cont) = 0.2A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 110MHz ; PD = 0.36W
BFT59
- Bipolar Npn Device InA Hermetically Sealed To18 Metal Package
BFT59CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 300V ; IC(cont) = 0.2A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 110MHz ; PD = 0.36W
BFT59DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 300V ; IC(cont) = 0.2A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 10V / 30mA ; FT = 110MHz ; PD = 0.36W
BFT60
- Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
BFT61
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 30V ; IC(cont) = 1A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 6V / 150mA ; FT = 60MHz ; PD = 0.8W
BFT62
- Bipolar PNP Device inA Hermetically sealed TO39 Metal Package.
BFT71
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 50V ; IC(cont) = 1A ; HFE(min) = 100 ; HFE(max) = 300 ; @ Vce/ic = 10V / 100mA ; FT = 100MHz ; PD = 0.36W
BFT79
- Bipolar PNP Device
BFT80
- Bipolar Pnp Device InA Hermetically Sealed To39 Metal Package.
BFT81
- Bipolar PNP Device inA Hermetically sealed TO39 Metal Package.
BFW44
- Bipolar PNP Device inA Hermetically sealed TO39 Metal Package
BFW44CSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 150V ; IC(cont) = 0.05A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 60MHz ; PD = 0.4W
BFW44DCSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 150V ; IC(cont) = 0.05A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 60MHz ; PD = 0.4W
BFX17
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 1A ; HFE(min) = 35 ; HFE(max) = - ; @ Vce/ic = 1V / 100mA ; FT = 250MHz ; PD = 0.8W
BFX17A
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 1A ; HFE(min) = 35 ; HFE(max) = - ; @ Vce/ic = 1V / 100mA ; FT = 250MHz ; PD = 0.8W
BFX29
- Pnp Silicon Epitaxial Transistor
BFX34CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 150 ; @ Vce/ic = 2V / 2A ; FT = 70MHz ; PD = 0.87W
BFX34SMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 150 ; @ Vce/ic = 2V / 2A ; FT = 70MHz ; PD = 0.87W
BFX34SMD05
- Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 150 ; @ Vce/ic = 2V / 2A ; FT = 70MHz ; PD = 0.87W
BFX37
- Bipolar PNP Device inA Hermetically sealed TO18 Metal Package
BFX37L
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.05A ; HFE(min) = 100 ; HFE(max) = - ; @ Vce/ic = 5V / 10mA ; FT = 40MHz ; PD = 0.36W
BFX38
- Pnp Silicon Epitaxial Transistor
BFX39
- PNP SILICON EPITAXIAL TRANSISTOR
BFX40
- PNP SILICON EPITAXIAL TRANSISTOR
BFX41
- PNP SILICON EPITAXIAL TRANSISTOR
BFX48
- Pnp Silicon Epitaxial Transistor
BFX48CSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 30V ; IC(cont) = 0.1A ; HFE(min) = 90 ; HFE(max) = - ; @ Vce/ic = 10V / 400mA ; FT = 400MHz ; PD = 0.36W
BFX48DCSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 30V ; IC(cont) = 0.1A ; HFE(min) = 90 ; HFE(max) = - ; @ Vce/ic = 10V / 400mA ; FT = 400MHz ; PD = 0.36W
BFX80DCSM
- Screening Options Available = ; Polarity = N/p ; Package = LCC2 (MO-041BB) ; Vceo = 60V ; IC(cont) = 0.2A ; HFE(min) = 160 ; HFE(max) = - ; @ Vce/ic = 5V / 100mA ; FT = 40MHz ; PD = 0.4W
BFX81DCSM
- Screening Options Available = ; Polarity = N/p ; Package = LCC2 (MO-041BB) ; Vceo = 20V ; IC(cont) = 0.2A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 1V / 100mA ; FT = 350MHz ; PD = 0.5W
BFX84
- Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
BFX86
- Bipolar NPN Device
BFX87
- Bipolar PNP Device inA Hermetically sealed TO39 Metal Package
BFY50
- Medium Power Amplifiers Npn Silicon Planar Transistor
BFY50L
- Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 35V ; IC(cont) = 1A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 10V / 150mA ; FT = 60MHz ; PD = 0.8W
BFY56
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 45V ; IC(cont) = 1A ; HFE(min) = 30 ; HFE(max) = 150 ; @ Vce/ic = 10V / 150mA ; FT = 40MHz ; PD = 0.8W
BFY56B
- Bipolar NPN Device inA Hermetically sealed TO39 Metal Package.
BFY64
- Bipolar PNP Device
BFY64CSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.5A ; HFE(min) = 80 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 200MHz ; PD = 0.4W
BFY75
- Bipolar NPN Device
BFY76
- Bipolar Npn Device InA Hermetically Sealed To18 Metal Package
BFY77
- Bipolar NPN Device inA Hermetically sealed TO18 Metal Package
BFY81DCSM
- Dual Bipolar NPN Devices.
BFY82DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 45V ; IC(cont) = 0.1A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 5V / 10mA ; FT = 250MHz ; PD = 0.5W
BFY84
- SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BFY84DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 12V ; IC(cont) = 0.2A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 1V / 3mA ; FT = 600MHz ; PD = 0.38W
BFY90
- Silicon Planar Epitaxial Npn Transistor
BFY90CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 15V ; IC(cont) = 0.025A ; HFE(min) = 25 ; HFE(max) = 150 ; @ Vce/ic = 1V / 2mA ; FT = 1000MHz ; PD = 0.2W
BFY90DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 15V ; IC(cont) = 0.025A ; HFE(min) = 25 ; HFE(max) = 150 ; @ Vce/ic = 1V / 2mA ; FT = 1000MHz ; PD = 0.2W
BLX12
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 120V ; IC(cont) = 2A ; HFE(min) = 20 ; HFE(max) = 120 ; @ Vce/ic = 10V / 1A ; FT = 10MHz ; PD = 13W
BLX41X
- Screening Options Available = ; Polarity = PNP ; Package = TO5 (TO205AA) ; Vceo = 100V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 10V / 500mA ; FT = 20MHz ; PD = 13W
BLX41XX
- Screening Options Available = ; Polarity = PNP ; Package = TO5 (TO205AA) ; Vceo = 100V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = 250 ; @ Vce/ic = 10V / 500mA ; FT = 20MHz ; PD = 13W
BLX48
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 5A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 10V / 1A ; FT = 20MHz ; PD = 18W
BLX48R
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 5A ; HFE(min) = 30 ; HFE(max) = 250 ; @ Vce/ic = 10V / 2A ; FT = 20MHz ; PD = 18W
BLY11
- Screening Options Available = ; Polarity = PNP ; Package = TO3 (TO204AA) ; Vceo = 100V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = 120 ; @ Vce/ic = 10V / 1A ; FT = 20MHz ; PD = 13W
BLY48A
- Screening Options Available = ; Polarity = NPN ; Package = TO66 (TO213AA) ; Vceo = 100V ; IC(cont) = 3A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 15MHz ; PD = 40W
BLY49
- Bipolar Npn Device InA Hermetically Sealed To66 Metal Package
BLY49A
- Screening Options Available = ; Polarity = NPN ; Package = TO66 (TO213AA) ; Vceo = 250V ; IC(cont) = 3A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 15MHz ; PD = 40W
BLY50
- Bipolar NPN Device inA Hermetically sealed TO66 Metal Package
BLY50A
- Screening Options Available = ; Polarity = NPN ; Package = TO66 (TO213AA) ; Vceo = 250V ; IC(cont) = 3A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 15MHz ; PD = 40W
BSS44CECC
- Screening Options Available = ; Polarity = PNP ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 2V / 2A ; FT = 70MHz ; PD = 5W
BSS71
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 200V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.5W
BSS71CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 200V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.5W
BSS71DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 200V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.5W
BSS72
- Bipolar Npn Device InA Hermetically Sealed To18 Metal Package
BSS73
- Bipolar NPN Device inA Hermetically sealed TO18 Metal Package
BSS73CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 300V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.4W
BSS73DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 300V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.4W
BSS74
- High Voltage Pnp Silicon Transistor
BSS74CSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 200V ; IC(cont) = 0.5A ; HFE(min) = 35 ; HFE(max) = 150 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.4W
BSS74R
- HIGH VOLTAGE PNP SILICON TRANSISTOR
BSS75
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 250V ; IC(cont) = 0.5A ; HFE(min) = 35 ; HFE(max) = 150 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.5W
BSS76
- Screening Options Available = ; Polarity = PNP ; Package = TO18 (TO206AA) ; Vceo = 300V ; IC(cont) = 0.5A ; HFE(min) = 35 ; HFE(max) = 150 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.5W
BSS77
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 200V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.5W
BSS78
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 200V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 10V / 30mA ; FT = 50MHz ; PD = 0.5W
BSV60
- Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
BSV62SMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 40V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 2V / 2A ; FT = 50MHz ; PD = 6.2W
BSV62SMD05
- Bipolar Npn Device InA Hermetically Sealed Ceramic Surface Mount Package For High Reliabilty Applications
BSV64
- Silicon Npn Planar Transistor
BSV64CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 2V / 2A ; FT = 70MHz ; PD = 5W
BSV64SMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 2V / 2A ; FT = 70MHz ; PD = 5W
BSV91
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 15V ; IC(cont) = - ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 1V / 10mA ; FT = 600MHz ; PD = 0.36W
BSW66ACECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 130MHz ; PD = 5W
BSW66CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 100V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 130MHz ; PD = 5W
BSW67ACECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 120V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 130MHz ; PD = 5W
BSW67CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 120V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 130MHz ; PD = 5W
BSW68ACECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 150V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 130MHz ; PD = 5W
BSW68CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 150V ; IC(cont) = 2A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 130MHz ; PD = 5W
BSX20CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 15V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 1V / 10mA ; FT = 500MHz ; PD = 0.36W
BSX20DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 15V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 1V / 10mA ; FT = 500MHz ; PD = 0.36W
BSX21
- Bipolar NPN Device
BSX33
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 15V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 1V / 10mA ; FT = 500MHz ; PD = 0.36W
BSX33CSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC1 ; Vceo = 55V ; IC(cont) = 1A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 1V / 50mA ; FT = 90MHz ; PD = 0.5W
BSX33DCSM
- Screening Options Available = ; Polarity = NPN ; Package = LCC2 (MO-041BB) ; Vceo = 55V ; IC(cont) = 1A ; HFE(min) = 50 ; HFE(max) = - ; @ Vce/ic = 1V / 50mA ; FT = 90MHz ; PD = 0.5W
BSX36CSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC1 ; Vceo = 40V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 100MHz ; PD = 0.36W
BSX36DCSM
- Screening Options Available = ; Polarity = PNP ; Package = LCC2 (MO-041BB) ; Vceo = 40V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 10V / 10mA ; FT = 100MHz ; PD = 0.36W
BSX39
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 20V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 0.4V / 30mA ; FT = 350MHz ; PD = 0.36W
BSX40
- Bipolar PNP Device
BSX52
- Bipolar NPN Device
BSX52A
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 50V ; IC(cont) = 0.2A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 4.5V / 2mA ; FT = 300MHz ; PD = 0.3W
BSX52B
- Screening Options Available = ; Polarity = NPN ; Package = TO18 (TO206AA) ; Vceo = 60V ; IC(cont) = 0.2A ; HFE(min) = 300 ; HFE(max) = - ; @ Vce/ic = 4.5V / 2mA ; FT = 300MHz ; PD = 0.3W
BSX62CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 40V ; IC(cont) = 3A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 1V / 1A ; FT = 30MHz ; PD = 5W
BSX62SMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 40V ; IC(cont) = 3A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 1V / 1A ; FT = 30MHz ; PD = 5W
BSX62SMD05
- Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 40V ; IC(cont) = 3A ; HFE(min) = 40 ; HFE(max) = 250 ; @ Vce/ic = 1V / 1A ; FT = 30MHz ; PD = 5W
BSX63CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 60V ; IC(cont) = 3A ; HFE(min) = 63 ; HFE(max) = 160 ; @ Vce/ic = 1V / 1A ; FT = 30MHz ; PD = 5W
BSX63SMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 60V ; IC(cont) = 3A ; HFE(min) = 63 ; HFE(max) = 160 ; @ Vce/ic = 1V / 1A ; FT = 30MHz ; PD = 5W
BSX64CECC
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 63 ; HFE(max) = 160 ; @ Vce/ic = 1V / 1A ; FT = 30MHz ; PD = 5W
BSX64SMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 63 ; HFE(max) = 160 ; @ Vce/ic = 1V / 1A ; FT = 30MHz ; PD = 5W
BSX64SMD05
- Screening Options Available = ; Polarity = NPN ; Package = SMD0.5 (TO276AA) ; Vceo = 80V ; IC(cont) = 3A ; HFE(min) = 63 ; HFE(max) = 160 ; @ Vce/ic = 1V / 1A ; FT = 30MHz ; PD = 5W
BSX95
- Bipolar NPN Device inA Hermetically sealed TO39 Metal Package
BSX95A
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 30V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 0.8W
BSX95S
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 30V ; IC(cont) = 0.5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 10V / 150mA ; FT = 100MHz ; PD = 0.8W
BSX96
- Bipolar NPN Device
BU105
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 750V ; IC(cont) = 2.5A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 7.5MHz ; PD = 10W
BU120
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BU127
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 120V ; IC(cont) = 10A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 1V / 5A ; FT = 60MHz ; PD = 25W
BU128
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 200V ; IC(cont) = 10A ; HFE(min) = 40 ; HFE(max) = - ; @ Vce/ic = 1V / 5A ; FT = 60MHz ; PD = 62.5W
BU206
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 800V ; IC(cont) = 2.5A ; HFE(min) = 2 ; HFE(max) = - ; @ Vce/ic = 5V / 2A ; FT = 7.5MHz ; PD = 10W
BU323
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 400V ; IC(cont) = 10A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 2.7V / 10A ; FT = - ; PD = 125W
BU326S
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 800V ; IC(cont) = 6A ; HFE(min) = 4 ; HFE(max) = - ; @ Vce/ic = 5V / 4A ; FT = 20MHz ; PD = 60W
BUL46B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 400V ; IC(cont) = 25A ; HFE(min) = 10 ; HFE(max) = - ; @ Vce/ic = 4V / 8A ; FT = 20MHz ; PD = 200W
BUL47A
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 300V ; IC(cont) = 40A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 4V / 25A ; FT = 20MHz ; PD = 200W
BUL47B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 250V ; IC(cont) = 40A ; HFE(min) = 30 ; HFE(max) = - ; @ Vce/ic = 4V / 10A ; FT = 20MHz ; PD = 200W
BUL48A
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BUL48B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 400V ; IC(cont) = 15A ; HFE(min) = 5 ; HFE(max) = - ; @ Vce/ic = 4V / 8A ; FT = 20MHz ; PD = 175W
BUL49A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL49B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AA) ; Vceo = 250V ; IC(cont) = 30A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 4V / 15A ; FT = 20MHz ; PD = 200W
BUL50A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL50A-T247
- Screening Options Available = ; Polarity = NPN ; Package = TO218 ; Vceo = 500V ; IC(cont) = 15A ; HFE(min) = 10 ; HFE(max) = - ; @ Vce/ic = 4V / 5A ; FT = 20MHz ; PD = 125W
BUL52
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL52AFI
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL52ASMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 500V ; IC(cont) = 6A ; HFE(min) = 5 ; HFE(max) = - ; @ Vce/ic = 1V / 2.5A ; FT = 20MHz ; PD = 100W
BUL52B
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52BFI
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL52BH
- Screening Options Available = ; Polarity = NPN ; Package = TO220 ; Vceo = 400V ; IC(cont) = 8A ; HFE(min) = 10 ; HFE(max) = 10 ; @ Vce/ic = 1V / 3A ; FT = 20MHz ; PD = 100W
BUL52BL
- Screening Options Available = ; Polarity = NPN ; Package = TO220 ; Vceo = 400V ; IC(cont) = 8A ; HFE(min) = 10 ; HFE(max) = 10 ; @ Vce/ic = 1V / 3A ; FT = 20MHz ; PD = 100W
BUL52BSMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 400V ; IC(cont) = 8A ; HFE(min) = 10 ; HFE(max) = 10 ; @ Vce/ic = 1V / 3A ; FT = 20MHz ; PD = 100W
BUL53A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL53ASMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 300V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 5V / 1A ; FT = 20MHz ; PD = 90W
BUL53B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL53BH
- Screening Options Available = ; Polarity = NPN ; Package = TO220 ; Vceo = 250V ; IC(cont) = 12A ; HFE(min) = 5 ; HFE(max) = - ; @ Vce/ic = 1V / 7A ; FT = 20MHz ; PD = 90W
BUL53BSMD
- Advanced Distributed Base Design High Voltage, High Speed Npn Silicon Power Transistor
BUL54
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54A
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54AFI
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54AR
- Screening Options Available = ; Polarity = NPN ; Package = TO220 ; Vceo = 500V ; IC(cont) = 4A ; HFE(min) = 12 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 20MHz ; PD = 70W
BUL54ASMD
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL54A-T126R
- Screening Options Available = ; Polarity = NPN ; Package = TO220 ; Vceo = 500V ; IC(cont) = 4A ; HFE(min) = 12 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 20MHz ; PD = 70W
BUL54A-T257
- Screening Options Available = ; Polarity = NPN ; Package = TO220 ; Vceo = 500V ; IC(cont) = 4A ; HFE(min) = 12 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 20MHz ; PD = 70W
BUL54A-T257F
- Screening Options Available = ; Polarity = NPN ; Package = TO257-Flexi Lead ; Vceo = 500V ; IC(cont) = 4A ; HFE(min) = 12 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 20MHz ; PD = 70W
BUL54A-TO126
- Screening Options Available = ; Polarity = NPN ; Package = TO220 ; Vceo = 500V ; IC(cont) = 4A ; HFE(min) = 12 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 20MHz ; PD = 70W
BUL54A-TO5
- Screening Options Available = ; Polarity = NPN ; Package = TO5 (TO205AA) ; Vceo = 500V ; IC(cont) = 4A ; HFE(min) = 12 ; HFE(max) = - ; @ Vce/ic = 5V / 500mA ; FT = 20MHz ; PD = 20W
BUL54B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL54BFI
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL54BSMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 400V ; IC(cont) = 5A ; HFE(min) = 15 ; HFE(max) = - ; @ Vce/ic = 5V / 1A ; FT = 20MHz ; PD = 70W
BUL55A
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL55ASMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 300V ; IC(cont) = 7A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 5V / 1A ; FT = 20MHz ; PD = 55W
BUL55B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL55BSMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 250V ; IC(cont) = 8A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 5V / 1A ; FT = 20MHz ; PD = 55W
BUL56A
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL56ASMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 160V ; IC(cont) = 16A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 4V / 5A ; FT = 20MHz ; PD = 85W
BUL56B
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL56BSMD
- Npn Fast Switching Transistor
BUL57A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL57ASMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 70V ; IC(cont) = 22A ; HFE(min) = 10 ; HFE(max) = - ; @ Vce/ic = 4V / 20A ; FT = 20MHz ; PD = 80W
BUL58
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL58A
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL58ASMD
- Screening Options Available = ; Polarity = NPN ; Package = SMD1 (TO276AB) ; Vceo = 160V ; IC(cont) = 10A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 4V / 4A ; FT = 20MHz ; PD = 50W
BUL58B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL58BSMD
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL62A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL62B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL63A
- Screening Options Available = ; Polarity = NPN ; Package = TO251 ; Vceo = 300V ; IC(cont) = 10A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 5V / 1A ; FT = 20MHz ; PD = 25W
BUL63B
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL64A
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL64B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL65B
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL66A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL66B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL68A
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL68B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL69
- Screening Options Available = ; Polarity = NPN ; Package = TO39 (TO205AD) ; Vceo = 500V ; IC(cont) = 7A ; HFE(min) = 60 ; HFE(max) = 150 ; @ Vce/ic = 2V / 50mA ; FT = 20MHz ; PD = 10W
BUL70A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL72A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL72ALCC4
- Screening Options Available = ; Polarity = NPN ; Package = SOT223 ; Vceo = 160V ; IC(cont) = 7A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 4V / 2A ; FT = 20MHz ; PD = 2W
BUL72B
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL72BLCC4
- Screening Options Available = ; Polarity = NPN ; Package = LCC4 ; Vceo = 100V ; IC(cont) = 8A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 4V / 3A ; FT = 20MHz ; PD = 2W
BUL74A
- Advanced Distributed Base Design High Voltage High Speed Npn Silicon Power Transistor
BUL74B
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL76A
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL76B
- ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL98A
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AE) ; Vceo = 400V ; IC(cont) = 30A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 20MHz ; PD = 250W
BUL98B
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AE) ; Vceo = 400V ; IC(cont) = 30A ; HFE(min) = - ; HFE(max) = - ; @ Vce/ic =V / 0mA ; FT = 20MHz ; PD = 250W
BUP46
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AE) ; Vceo = 60V ; IC(cont) = 60A ; HFE(min) = 20 ; HFE(max) = - ; @ Vce/ic = 4V / 60A ; FT = - ; PD = 250W
BUP47
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AE) ; Vceo = 100V ; IC(cont) = 50A ; HFE(min) = 25 ; HFE(max) = - ; @ Vce/ic = 4V / 30A ; FT = - ; PD = 250W
BUP48
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package
BUP49
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package.
BUP50
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AE) ; Vceo = 100V ; IC(cont) = 100A ; HFE(min) = 10 ; HFE(max) = - ; @ Vce/ic = 4V / 100A ; FT = - ; PD = 300W
BUP50A
- NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR
BUP51
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package.
BUP52
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package.
BUP53
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package.
BUP53R
- Screening Options Available = ; Polarity = NPN ; Package = TO3 (TO204AE) ; Vceo = 250V ; IC(cont) = 60A ; HFE(min) = 15 ; HFE(max) = - ; @ Vce/ic = 4V / 20A ; FT = - ; PD = 300W
BUP54
- Npn Multi-epitaxial Transistor
BUP56
- Npn Multi-epitaxial Transistor
BUR10
- Screening Options Available = ; Polarity = NPN ; Package = TO66 (TO213AA) ; Vceo = 80V ; IC(cont) = 5A ; HFE(min) = 40 ; HFE(max) = 120 ; @ Vce/ic = 5V / 2A ; FT = 50MHz ; PD = 37W
BUR20
- Bipolar NPN Device inA Hermetically sealed TO3 Metal Package.
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