W364M72V - 64Mx72 Synchronous DRAMThe 512MByte (4.5Gb) SDRAM isA high-speed CMOS,dynamic random-access, memory using 9 chips containing512M bits. Each chip is internally confi gured asA quadbankDRAM withA synchronous interface. Each of thechip’s 134,217,728-bit banks is organized as 8,192 rowsby 2,048 columns by 8 bits.
W3E232M16S - 2x32Mx16bit DDR SDRAM]Bidirectional data strobe (DQS) transmitted/re ceived with data, i.e., source-syn chro nous datacapture (one per byte) DQS edge-aligned with data for READs; centeralignedwith data for WRITEs Four internal banks for concurrent operation Data mask (DM) pins for masking write data(one per byte) Programmable IOL/IOH option Auto precharge option Auto Refresh and Self Refresh Modes Commercial, and Industrial Temperature Rang es Organized as 2X32M x 16
W3E32M72S - 32Mx72 DDR SDRAMThe 256MByte (2Gb) DDR SDRAM isA high-speed CMOS,dy nam ic ran dom-access, memory using 5 chips containing536,870,912 bits. Each chip is internally configured as aquad-bank DRAM.
W3E32M72S-XSBX - 32Mx72 DDR SDRAMThe 256MByte (2Gb) DDR SDRAM isA high-speed CMOS,dy nam ic ran dom-access, memory using 5 chips containing536,870,912 bits. Each chip is internally configured as aquad-bank DRAM.
W3E64M72S - 64Mx72 DDR SDRAMThe 512MByte (4Gb) DDR SDRAM isA high-speed CMOS,dy nam ic ran dom-access, memory using 9 chips containing536,870,912 bits. Each chip is internally configured as aquad-bank DRAM.
W3H32M64E - 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package62% SPACE SAVINGS vs. FPBGA Re duced part count 42% I/O reduction vs FPBGA Re duced trace lengths for low er parA sit icca pac i tance Suit able for hi-re li abil i ty ap pli ca tions Upgradeable to 64M x 64 den si ty (con tact fac to ryfor information)
W3H32M72E- - 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package65% SPACE SAVINGS vs. FPBGA Re duced part count 54% I/O reduction vs FPBGA Re duced trace lengths for low er parA sit icca pac i tance Suit able for hi-re li abil i ty ap pli ca tions Upgradable to 64M x 72 den si ty (con tact fac to ry forinformation)
W3H32M72E-XSBX - 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package65% SPACE SAVINGS vs. FPBGA Re duced part count 54% I/O reduction vs FPBGA Re duced trace lengths for low er parA sit icca pac i tance Suit able for hi-re li abil i ty ap pli ca tions Upgradable to 64M x 72 den si ty (con tact fac to ry forinformation)
W72M64VK - 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip PackageUnlock Bypass Program command• Reduces overall programming time when issuingmultiple program command sequences Ready/Busy# output (RY/BY#)• Hardware method for detecting program or erasecycle completion Hardware reset pin (RESET#)• Hardware method of resetting the internal statemachine to the read mode WP#/ACC input pin• Write protect (WP#) function allows protectiontwo outermost boot sectors, regardless of sectorprotect status• Acceleration (ACC)
W764M32V - 64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash MemoryThe W764MB2V-XSBX device isA 3.0V single powerflash memory. The device utilizes four organized as33,554,432 words or 67, 108,864 bytes. The device has64 -bit wide data bus that can also function as an 32-bitwide data bus by using the BYTE# input. The device canbe programmed either in the host system or in standardEPROM programmers.
W7NCF01GH10IS4BG - CompactFlashTM CardThe W7NCFxxx-H Series CompactFlashTM card is an ATAinterface fl ash memory card based on fl ash technology.The CompactFlashTM card is constructed withA 32 bit RISCbased controller and NAND fl ash memory devices. Thecard operates fromA single 5-Volt or 3.3-Volt power source,and is available in CompactFlashTM type-I form factor with128MB, 256MB, 512, 1GB, 2GB, and 4GB capacity. Ableto emulate IDE hard disk drives and certifi ed in accordancewith the CompactFlashTM Certifi cation Plan.
W7NCF02GH10IS6BG - CompactFlashTM CardThe W7NCFxxx-H Series CompactFlashTM card is an ATAinterface fl ash memory card based on fl ash technology.The CompactFlashTM card is constructed withA 32 bit RISCbased controller and NAND fl ash memory devices. Thecard operates fromA single 5-Volt or 3.3-Volt power source,and is available in CompactFlashTM type-I form factor with128MB, 256MB, 512, 1GB, 2GB, and 4GB capacity. Ableto emulate IDE hard disk drives and certifi ed in accordancewith the CompactFlashTM Certifi cation Plan.
W7NCF04GH10IS7BG - CompactFlashTM CardThe W7NCFxxx-H Series CompactFlashTM card is an ATAinterface fl ash memory card based on fl ash technology.The CompactFlashTM card is constructed withA 32 bit RISCbased controller and NAND fl ash memory devices. Thecard operates fromA single 5-Volt or 3.3-Volt power source,and is available in CompactFlashTM type-I form factor with128MB, 256MB, 512, 1GB, 2GB, and 4GB capacity. Ableto emulate IDE hard disk drives and certifi ed in accordancewith the CompactFlashTM Certifi cation Plan.
W7NCF128H10IS2BG - CompactFlashTM CardThe W7NCFxxx-H Series CompactFlashTM card is an ATAinterface fl ash memory card based on fl ash technology.The CompactFlashTM card is constructed withA 32 bit RISCbased controller and NAND fl ash memory devices. Thecard operates fromA single 5-Volt or 3.3-Volt power source,and is available in CompactFlashTM type-I form factor with128MB, 256MB, 512, 1GB, 2GB, and 4GB capacity. Ableto emulate IDE hard disk drives and certifi ed in accordancewith the CompactFlashTM Certifi cation Plan.
W7NCF256H10IS3BG - CompactFlashTM CardThe W7NCFxxx-H Series CompactFlashTM card is an ATAinterface fl ash memory card based on fl ash technology.The CompactFlashTM card is constructed withA 32 bit RISCbased controller and NAND fl ash memory devices. Thecard operates fromA single 5-Volt or 3.3-Volt power source,and is available in CompactFlashTM type-I form factor with128MB, 256MB, 512, 1GB, 2GB, and 4GB capacity. Ableto emulate IDE hard disk drives and certifi ed in accordancewith the CompactFlashTM Certifi cation Plan.
W7NCF512H10IS4BG - CompactFlashTM CardThe W7NCFxxx-H Series CompactFlashTM card is an ATAinterface fl ash memory card based on fl ash technology.The CompactFlashTM card is constructed withA 32 bit RISCbased controller and NAND fl ash memory devices. Thecard operates fromA single 5-Volt or 3.3-Volt power source,and is available in CompactFlashTM type-I form factor with128MB, 256MB, 512, 1GB, 2GB, and 4GB capacity. Ableto emulate IDE hard disk drives and certifi ed in accordancewith the CompactFlashTM Certifi cation Plan.
WC32P020-XP2M - 16 32-Bit General-Purpose Data and Address Registers
WC32P020-XQ2M - 16 32-Bit General-Purpose Data and Address Registers
WC32P020-XXM - 16 32-Bit General-Purpose Data and Address Registers
WC32P040 - 68040The WC32P040 isA 68000-compatible, high-performance,32-bit microprocessor. The WC32P040 isA virtualmemory microprocessor employing multiple concurrentexecution units andA highly intergrated architecture thatprovides very high performance inA monolithic HCMOSdevice. It hasA 68030-compatible integer unit (IU) andtwo independent caches. The WC32P040 contains dual,independent, demand-paged memory management units(MMUs) for instruction and data stream accesses andindependent, 4-Kbyte instruction and da
WC32P040-XP4M - 32-Bit, Nonmultiplexed External Address and Data Buses with Synchronous Interface
WC32P040-XQ4M - 32-Bit, Nonmultiplexed External Address and Data Buses with Synchronous Interface
WC32P040-XXM - 32-Bit, Nonmultiplexed External Address and Data Buses with Synchronous Interface