BF1005 Siemens - Silicon N-channel Mosfet Tetrode (for Low Noise, High Gain Controlled Input Stages Up To 1ghz Operating Voltage 5v Integrated Stabilized Bias Network)
BF1005S Siemens - Silicon N-channel Mosfet Tetrode (for Low Noise, High Gain Controlled Input Stages Up To 1ghz Operating Voltage 5v Integrated Stabilized Bias Network)
BF1009 Siemens - Silicon N-channel Mosfet Tetrode (for Low Noise, High Gain Controlled Input Stages Up To 1ghz Operating Voltage 9V Integrated Stabilized Bias Network
BF1009S Siemens - Silicon N-channel Mosfet Tetrode (for Low Noise, High Gain Controlled Input Stages Up To 1ghz Operating Voltage 9v Integrated Bias Network)
BF1012 Siemens - Silicon N-channel Mosfet Tetrode (for Low Noise, High Gain Controlled Input Stages Up To 1ghz Operating Voltage 12v Integrated Stabilized Bias Network
BF1012S Siemens - Silicon N-channel Mosfet Tetrode (for Low Noise, High Gain Controlled Input Stages Up To 1ghz Operating Voltage 5v Integrated Stabilized Bias Network)
BF1206F Philips - Dual N-channel dual gate MOSFETThe BF1206F isA combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization andA very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated inA SOT666 micro-miniature plastic package. CAUTIONTh
BF2000W Siemens - Silicon N Channel Mosfet Tetrode (short-channel Transistor With High S/c Quality Factor For Low-noise, Gain-controlled Input Stages Up To 1 Ghz)
BF622 Siemens - Npn Silicon High-voltage Transistor (suitable For Video Output Stages In Tv Sets High Breakdown Voltage Low Collector-emitter Saturation Voltage)
BF622 Неопределенные - The Small-signal NPN Silicon High Voltage Medium-Power Transistor
BF623 Siemens - Pnp Silicon High-voltage Transistor (suitable For Video Output Stages In Tv Sets High Breakdown Voltage Low Collector-emitter Saturation Voltage)
BF840 Siemens - Npn Silicon Rf Transistors (suitable For Common Emitter Rf, If Amplifiers Low Collector-base Capacitance Due To Contact Shield Diffusion)
BF841 Siemens - NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
BF994 Siemens - Silicon N Channel Mosfet Tetrode (for Vhf Applications, Especially For Input and Mixer Stages WithA Wide Tuning Range, E.g. In Catv Tuners)
BF994S Siemens - Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages withA wide tuning range, e.g. in CATV tuners)
BF998 Siemens - Silicon N Channel Mosfet Tetrode (short-channel Transistor With High S/c Quality Factor For Low-noise, Gain-controlled Input Stages Up To 1 Ghz)
BFG310W/XR Philips - NPN 14 GHz wideband transistor NPN silicon planar epitaxial transistor inA 4-pin dual-emitter SOT343R plastic package. FeaturesHigh power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability ApplicationsIntended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), et
BFG325W/XR Philips - NPN 14 GHz wideband transistor NPN silicon planar epitaxial transistor inA 4-pin dual-emitter SOT343R plastic package. FeaturesHigh power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability ApplicationsIntended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), et
BFG325/XR Philips - NPN 14 GHz wideband transistor NPN silicon planar epitaxial transistor inA 4-pin dual-emitter SOT143R plastic package. FeaturesHigh power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability ApplicationsIntended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), et
BFP194 Siemens - Pnp Silicon Rf Transistor (for Low Distortion Broadband Amplifiers In Antenna and Telecommunications Systems Up To 1.5 Ghz At Collector Currents)
BFP93 Siemens - Npn Silicon Rf Transistor (for Low Distortion Broadband Amplifiers and Oscillators Up To 2ghz At Collector Currents From 5 Ma To 30 Ma)
BFP93A Siemens - NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
BFQ70 Siemens - Npn Silicon Rf Transistor (for Low-noise If and Broadband Amplifiers In Antenna and Telecommunications Systems At Collector Currents From 2ma To 20ma)
BFQ71 Siemens - Npn Silicon Rf Transistor (for Broadband Amplifiers Up To 2 Ghz and Fast Non-saturated Switches At Collector Currents From 1 Ma To 20 Ma.)
BFQ72 Siemens - Npn Silicon Rf Transistor (for Low-distortion Broadband Amplifiers Up To 2 Ghz At Collector Currents From 10 Ma To 30 Ma.)
BFQ73 Siemens - Npn Silicon Rf Transistor (for Low-noise, Low-distortion Broadband Amplifiers In Antenna and Telecommunications Systems Up To 2ghz)
BFQ73S Siemens - NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA and TELECOMMUNICATIONS SYSTEMS UP TO 2GHz)
BFQ74 Siemens - Npn Silicon Rf Transistor (for Low-noise Amplifiers In The Ghz Range, and Broadband Analog and Digital Applications)
BFQ75 Siemens - Pnp Silicon Rf Transistor (for Broadband Amplifiers Up To 2 Ghz At Collector Currents From 5 Ma To 30 Ma.)
BFQ76 Siemens - Pnp Silicon Rf Transistor (for Broadband Amplifiers Up To 2 Ghz At Collector Currents Up To 20 Ma.)
BFQ81 Siemens - Npn Silicon Rf Transistor (for Low-noise Amplifiers Up To 2ghz and Broadband Analog and Digital Applications)
BFQ82 Siemens - Npn Silicon Rf Transistor (for Low-noise, High-gain Amplifiers Up To 2 Ghz. Linear Broadband Applications At Collector Currents Up To 40 Ma.)
BFR ITT - Aerospace Avionic Equipment Geological Exploration
BFR35 Siemens - Npn Silicon Transistor For Low-noise Rf Broadband Amplifiers and High-speed Switching Applications
BFR35 Siemens - Npn Silicon Rf Transistor (for Low Distortion Broadband Amplifiers and Oscillators Up To 2ghz At Collector Currents From 0.5ma To 20ma)
BFR35A Siemens - NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS and HIGH-SPEED SWITCHING APPLICATIONS
BFR35AP Siemens - NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)
BFR92P Siemens - Npn Silicon Rf Transistor (for Broadband Amplifiers Up To 2ghz and Fast Non-saturated Switches At Collector Currents From 0.5 Ma To 20 Ma)
BFR92W Siemens - Npn Silicon Rf Transistor (for Broadband Amplifiers Up To 2ghz and Fast Non-saturated Switches At Collector Currents From 0.5 Ma To 20 Ma)
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