IRS2108 - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with HIN input• Low side output out of phase with input• Logic and power ground +/- 5V offset• Internal 540 ns deadtime, and progra
IRS21084 - • Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with HIN input• Low side output out of phase with input• Logic and power ground +/- 5V offset• Internal 540 ns deadtime, and programmable u
IRS21084PBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with HIN input• Low side output out of phase with input• Logic and power ground +/- 5V offset• Internal 540 ns deadtime, and progra
IRS21084SPBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with HIN input• Low side output out of phase with input• Logic and power ground +/- 5V offset• Internal 540 ns deadtime, and progra
IRS21084STRPBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with HIN input• Low side output out of phase with input• Logic and power ground +/- 5V offset• Internal 540 ns deadtime, and progra
IRS2108PBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with HIN input• Low side output out of phase with input• Logic and power ground +/- 5V offset• Internal 540 ns deadtime, and progra
IRS2108SPBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with HIN input• Low side output out of phase with input• Logic and power ground +/- 5V offset• Internal 540 ns deadtime, and progra
IRS2108STRPBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with HIN input• Low side output out of phase with input• Logic and power ground +/- 5V offset• Internal 540 ns deadtime, and progra
IRS2111 - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• CMOS Schmitt-triggered inputs with pull-down• Matched propagation delay for both channels• Internally set deadtime• High side output in phase with inputTypical ConnectionData Sheet No. PD60253HALF-BRIDGE DRIVERProduct SummaryVOFFSET 600V max.IO+/- 200 mA / 420 mAVOUT 10V - 20 Vton/of
IRS2111PBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• CMOS Schmitt-triggered inputs with pull-down• Matched propagation delay for both channels• Internally set deadtime• High side output in phase with inputTypical ConnectionData Sheet No. PD60253HALF-BRIDGE DRIVERProduct SummaryVOFFSET 600V max.IO+/- 200 mA / 420 mAVOUT 10V - 20 Vton/of
IRS2111SPBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• CMOS Schmitt-triggered inputs with pull-down• Matched propagation delay for both channels• Internally set deadtime• High side output in phase with inputTypical ConnectionData Sheet No. PD60253HALF-BRIDGE DRIVERProduct SummaryVOFFSET 600V max.IO+/- 200 mA / 420 mAVOUT 10V - 20 Vton/of
IRS2111STRPBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• CMOS Schmitt-triggered inputs with pull-down• Matched propagation delay for both channels• Internally set deadtime• High side output in phase with inputTypical ConnectionData Sheet No. PD60253HALF-BRIDGE DRIVERProduct SummaryVOFFSET 600V max.IO+/- 200 mA / 420 mAVOUT 10V - 20 Vton/of
IRS2113 - The IRS2110/IRS2113 are high voltage, high speedpower MOSFET and IGBT drivers with independenthigh and low side referenced output channels. ProprietaryHVIC and latch immune CMOS technologiesenable ruggedized monolithic construction. Logic inputsare compatible with standard CMOS or LSTTLoutput, down to 3.3V logic. The output drivers featurea high pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays arematched to simplify use in high frequency applications.The floating c
IRS2153D - Self-oscillating Half-bridege Driver Ic
IRS2153DPBF - SELF-OSCILLATING HALF-BRIDEGE DRIVER IC
IRS2153DSPBF - SELF-OSCILLATING HALF-BRIDEGE DRIVER IC
IRS2153DSTRPBF - 600V self-oscillating half-bridge electronic ballast IC
IRS2181 - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS21814 - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS21814PBF - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS21814SPBF - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS21814STRPBF - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS2181PBF - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS2181SPBF - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS2181STRPBF - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS2181TRPBF - The IRS2181/IRS21814 are highvoltage, high speed power MOSFETand IGBT drivers with independenthigh and low side referenced outputchannels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers featureA high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highs
IRS21834PBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3V and 5V input logic compatible• Matched propagation delay for both channels• Logic and power ground +/- 5V offset• Lower di/dt gate driver for better noise immunity• Output source/sink current capability 1.4 A/1.8 AIRS2183 IRS21834www.irf.com 1IRS2183/IRS21834(S)PbFData Sheet No
IRS21834SPBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3V and 5V input logic compatible• Matched propagation delay for both channels• Logic and power ground +/- 5V offset• Lower di/dt gate driver for better noise immunity• Output source/sink current capability 1.4 A/1.8 AIRS2183 IRS21834www.irf.com 1IRS2183/IRS21834(S)PbFData Sheet No
IRS21834STRPBF - Features• Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dtimmune• Gate drive supply range from 10V to 20 V• Undervoltage lockout for both channels• 3.3V and 5V input logic compatible• Matched propagation delay for both channels• Logic and power ground +/- 5V offset• Lower di/dt gate driver for better noise immunity• Output source/sink current capability 1.4 A/1.8 AIRS2183 IRS21834www.irf.com 1IRS2183/IRS21834(S)PbFData Sheet No
IRS2184 - The IRS2184/IRS21844 are high voltage,high speed power MOSFET andIGBT drivers with dependent high andlow side referenced output channels.Proprietary HVIC and latch immuneCMOS technologies enable ruggedizedmonolithic construction. The logic inputis compatible with standard CMOSor LSTTL output, down to 3.3V logic. Theoutput drivers featureA high pulse currentbuffer stage designed for minimumdriver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT inthe high side c
IRS21844 - The IRS2184/IRS21844 are high voltage,high speed power MOSFET andIGBT drivers with dependent high andlow side referenced output channels.Proprietary HVIC and latch immuneCMOS technologies enable ruggedizedmonolithic construction. The logic inputis compatible with standard CMOSor LSTTL output, down to 3.3V logic. Theoutput drivers featureA high pulse currentbuffer stage designed for minimumdriver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT inthe high side c
IRS21844PBF - The IRS2184/IRS21844 are high voltage,high speed power MOSFET andIGBT drivers with dependent high andlow side referenced output channels.Proprietary HVIC and latch immuneCMOS technologies enable ruggedizedmonolithic construction. The logic inputis compatible with standard CMOSor LSTTL output, down to 3.3V logic. Theoutput drivers featureA high pulse currentbuffer stage designed for minimumdriver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT inthe high side c
IRS21844SPBF - The IRS2184/IRS21844 are high voltage,high speed power MOSFET andIGBT drivers with dependent high andlow side referenced output channels.Proprietary HVIC and latch immuneCMOS technologies enable ruggedizedmonolithic construction. The logic inputis compatible with standard CMOSor LSTTL output, down to 3.3V logic. Theoutput drivers featureA high pulse currentbuffer stage designed for minimumdriver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT inthe high side c
IRS21844STRPBF - The IRS2184/IRS21844 are high voltage,high speed power MOSFET andIGBT drivers with dependent high andlow side referenced output channels.Proprietary HVIC and latch immuneCMOS technologies enable ruggedizedmonolithic construction. The logic inputis compatible with standard CMOSor LSTTL output, down to 3.3V logic. Theoutput drivers featureA high pulse currentbuffer stage designed for minimumdriver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT inthe high side c
IRS2184PBF - The IRS2184/IRS21844 are high voltage,high speed power MOSFET andIGBT drivers with dependent high andlow side referenced output channels.Proprietary HVIC and latch immuneCMOS technologies enable ruggedizedmonolithic construction. The logic inputis compatible with standard CMOSor LSTTL output, down to 3.3V logic. Theoutput drivers featureA high pulse currentbuffer stage designed for minimumdriver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT inthe high side c
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