M58BW32F STMicroelectronics - The M58BW16F and M58BW32F are 16 and 32 Mbit non-volatile Flash memories,respectively. They can be erased electrically at block level and programmed in-system on aDouble-Word basis usingA 2.7V to 3.6V or 2.5V to 3.3V VDD supply for the circuit and a2.4V to 3.6V VDDQ supply voltage for the Input and Output buffers.In the rest of the document the M58BW16F and M58BW32F will be referred to asM58BWxxF unless otherwise specified.The devices support Asynchronous (Latch Controlled and Page Read) and SynchronousBus
M58CR032C STMicroelectronics - 32 Mbit (2Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
M58CR032C100ZB6T STMicroelectronics - 32 Mbit (2Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
M58CR032C120ZB6T STMicroelectronics - 32 Mbit (2Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
M58CR032C85ZB6T STMicroelectronics - 32 Mbit (2Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
M58CR032CZB STMicroelectronics - 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR032D STMicroelectronics - 32 Mbit (2Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
M58CR032D100ZB6T STMicroelectronics - 32 Mbit (2Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
M58CR032D120ZB6T STMicroelectronics - 32 Mbit (2Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
M58CR032D85ZB6T STMicroelectronics - 32 Mbit (2Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
M58CR032DZB STMicroelectronics - 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064C STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064C10ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064C12ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064C85ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064C90ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064CZB STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D10ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D12ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D85ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D90ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064DZB STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P10ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P12ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P85ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P90ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064PZB STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q10ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q12ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q85ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q90ZB6T STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064QZB STMicroelectronics - 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064-ZBT STMicroelectronics - 64 Mbit 4mb X 16, Dual Bank, Burst 1.8v Supply Flash Memory
M58LR128GU STMicroelectronics - The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbitx16) non-volatile Flash memories, respectively. They will be referred to as M58LRxxxGU/Lin the rest of the document unless otherwise specified.The M58LRxxxGU/L may be erased electrically at block level and programmed in-system ona Word-by-Word basis usingA 1.7V to 2.0V VDD supply for the circuitry andA 1.7V to 2.0VVDDQ supply for the Input/Output pins. An optional 9V VPP power supply is provided tospeed up factory programming
M58LR256GU STMicroelectronics - The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbitx16) non-volatile Flash memories, respectively. They will be referred to as M58LRxxxGU/Lin the rest of the document unless otherwise specified.The M58LRxxxGU/L may be erased electrically at block level and programmed in-system ona Word-by-Word basis usingA 1.7V to 2.0V VDD supply for the circuitry andA 1.7V to 2.0VVDDQ supply for the Input/Output pins. An optional 9V VPP power supply is provided tospeed up factory programming