A43L4616V-7 - 4M X 16 Bit X 4 Banks Synchronous DRAM
A43L4616V-7F - 4M X 16 Bit X 4 Banks Synchronous DRAMThe A43L4616 is 268,435,456 bits synchronous high datarate Dynamic RAM organized as 4 X 4,194,304 words by16 bits, fabricated with AMIC’s high performance CMOStechnology. Synchronous design allows precise cyclecontrol with the use of system clock. I/O transactions are
A43L8316 - 128k X 16 Bit X 2 Banks Synchronous Dram
A43L8316A - 128k X 16 Bit X 2 Banks Synchronous Dram
A43L8316AV - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316AV-5 - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316AV-5.5 - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316AV-6 - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316AV-7 - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316V - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316V-10 - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316V-7 - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316V-8 - 128K X 16 Bit X 2 Banks Synchronous DRAM
A43P26161 - 1m X 16 Bit X 4 Banks Low Power Synchronous Dram
A43P26161G-75 - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161G-75F - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161G-75U - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161G-75UF - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161G-95 - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161G-95F - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161G-95U - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161G-95UF - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V-75 - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V-75F - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V-75U - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V-75UF - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V-95 - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V-95F - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V-95U - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A43P26161V-95UF - 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
A45L9332A - 256k X 32 Bit X 2 Banks Synchronous Graphic Ram
A45L9332AE - 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
A45L9332AE-6 - 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
A45L9332AE-7 - 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
A45L9332AE-8 - 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
A45L9332AF - 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
A45L9332AF-6 - 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
A45L9332AF-7 - 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
A45L9332AF-8 - 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
A48P3616V-5 - 8M X 16 Bit DDR DRAMThe 128Mb DDR SDRAM isA high-speed CMOS, dynamicrandom-access memory containing 134,217,728 bits. It isinternally configured asA quad-bank DRAM and is based onNanya’s 110nm process.
A48P3616V-5 - 16M X 16 Bit DDR DRAMThe 256Mb DDR SDRAM usesA double-data-rate architectureto achieve high-speed operation. The double data ratearchitecture is essentiallyA 2n prefetch architecture with aninterface designed to transfer two data words per clock cycleat the I/O pins.A single read or write access for the 256MbDDR SDRAM effectively consists ofA single 2n-bit wide, oneclock cycle data transfer at the internal DRAM core and twocorresponding n-bit wide, one-half-clock-cycle data transfersat the I/O pins.
A49LF004TL-33 - 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash MemoryThe A49LF004 flash memory device is designed to be readcompatiblewith the Intel 82802 Firmware Hub (FWH) devicefor PC-BIOS application. This device is designed to use asingle low voltage, range from 3.0 Volt to 3.6 Volt powersupply to perform in-system or off-system read and writeoperations. It provides protection for the storage and updateof code and data in addition to adding system designflexibility through five general-purpose inputs. Two interfacemodes
A49LF004TL-33F - 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash MemoryThe A49LF004 flash memory device is designed to be readcompatiblewith the Intel 82802 Firmware Hub (FWH) devicefor PC-BIOS application. This device is designed to use asingle low voltage, range from 3.0 Volt to 3.6 Volt powersupply to perform in-system or off-system read and writeoperations. It provides protection for the storage and updateof code and data in addition to adding system designflexibility through five general-purpose inputs. Two interfacemodes
A49LF004TX-33 - 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash MemoryThe A49LF004 flash memory device is designed to be readcompatiblewith the Intel 82802 Firmware Hub (FWH) devicefor PC-BIOS application. This device is designed to use asingle low voltage, range from 3.0 Volt to 3.6 Volt powersupply to perform in-system or off-system read and writeoperations. It provides protection for the storage and updateof code and data in addition to adding system designflexibility through five general-purpose inputs. Two interfacemodes
A49LF004TX-33F - 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash MemoryThe A49LF004 flash memory device is designed to be readcompatiblewith the Intel 82802 Firmware Hub (FWH) devicefor PC-BIOS application. This device is designed to use asingle low voltage, range from 3.0 Volt to 3.6 Volt powersupply to perform in-system or off-system read and writeoperations. It provides protection for the storage and updateof code and data in addition to adding system designflexibility through five general-purpose inputs. Two interfacemodes
A4LP62E16512U-70LLTF - 512K X 16 BIT LOW VOLTAGE CMOS SRAMThe LP62E16512-T isA low operating current 8,388,608-bitstatic random access memory organized as 524,288 wordsby 16 bits and operates on low power voltage from 1.65V to2.2V. It is built using AMIC\'s high performance CMOSprocess.
A62S6316G-55SF - 64K X 16 BIT LOW VOLTAGE CMOS SRAMThe A62S6316 isA low operating current 1,048,576-bitstatic random access memory organized as 65,536words by 16 bits and operates on low power supplyvoltage from 2.7V to 3.3V. It is built using AMIC’s highperformance CMOS process.
A62S6316G-55SIF - 64K X 16 BIT LOW VOLTAGE CMOS SRAMThe A62S6316 isA low operating current 1,048,576-bitstatic random access memory organized as 65,536words by 16 bits and operates on low power supplyvoltage from 2.7V to 3.3V. It is built using AMIC’s highperformance CMOS process.
A62S6316V-55SF - 64K X 16 BIT LOW VOLTAGE CMOS SRAMThe A62S6316 isA low operating current 1,048,576-bitstatic random access memory organized as 65,536words by 16 bits and operates on low power supplyvoltage from 2.7V to 3.3V. It is built using AMIC’s highperformance CMOS process.
A62S6316V-55SIF - 64K X 16 BIT LOW VOLTAGE CMOS SRAMThe A62S6316 isA low operating current 1,048,576-bitstatic random access memory organized as 65,536words by 16 bits and operates on low power supplyvoltage from 2.7V to 3.3V. It is built using AMIC’s highperformance CMOS process.
A62S6316V-70SF - 64K X 16 BIT LOW VOLTAGE CMOS SRAMThe A62S6316 isA low operating current 1,048,576-bitstatic random access memory organized as 65,536words by 16 bits and operates on low power supplyvoltage from 2.7V to 3.3V. It is built using AMIC’s highperformance CMOS process.
A62S6316V-70SIF - 64K X 16 BIT LOW VOLTAGE CMOS SRAMThe A62S6316 isA low operating current 1,048,576-bitstatic random access memory organized as 65,536words by 16 bits and operates on low power supplyvoltage from 2.7V to 3.3V. It is built using AMIC’s highperformance CMOS process.